Toshiba Electronic Devices & Storage Corporation announced the termination of its memorandum of understanding (MOU) with SICC Co., Ltd., originally signed in August 2025 to explore collaboration in silicon carbide (SiC) power semiconductor wafers.
According to Toshiba, the decision to end the agreement was made in September 2025 after further discussions between the two companies. The MOU had been intended to support potential cooperation in SiC wafer supply and development, aiming to strengthen Toshiba’s position in the growing SiC power device market.
The conclusion of the agreement marks the end of the preliminary collaboration framework, though Toshiba remains committed to advancing its SiC technology and supply chain strategy to meet increasing global demand for high-efficiency power semiconductors.
Original – Toshiba