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ROHM has launched the new DOT-247 package — a 2-in-1 SiC molded power module designed to meet the evolving demands of industrial applications such as photovoltaic (PV) inverters, uninterruptible power supplies (UPS), and semiconductor relays. Available in two topologies, half-bridge and common-source (SCZ40xxDTx, SCZ40xxKTx), the DOT-247 retains the versatility of the popular TO-247 package while offering significantly enhanced power density and design flexibility.
By combining two TO-247 packages into a single molded module, the DOT-247 accommodates larger SiC chips that were previously difficult to integrate. This structure reduces on-resistance and achieves improved thermal and electrical performance. Compared to a conventional TO-247 package, the DOT-247 lowers thermal resistance by approximately 15% and inductance by about 50%. In half-bridge configurations, this translates to 2.3 times higher power density, enabling the same power output in roughly half the volume.
The DOT-247 package is well-suited for advanced multi-level circuit topologies that are becoming more common in high-voltage PV systems, including three-level NPC, three-level T-NPC, and five-level ANPC architectures. These designs often require both half-bridge and common-source topologies, which can necessitate custom solutions when using traditional discrete SiC devices.
ROHM addresses this need by offering both topologies in standardized 2-in-1 modules, simplifying system design and integration. These modules allow engineers to reduce component count, shrink mounting area, and streamline the development of complex converter systems such as NPC circuits and DC-DC converters.
The DOT-247 SiC modules provide a compact, scalable path toward higher efficiency and miniaturization in next-generation industrial power applications.
Original – ROHM
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Microchip Technology has introduced its latest family of DualPack 3 (DP3) power modules, developed to meet the increasing demand for compact, efficient, and simplified power solutions across industrial and energy applications. The new modules incorporate advanced IGBT7 technology and are available in six variants, rated at 1200V and 1700V, with current capacities ranging from 300A to 900A.
Engineered to deliver up to 15–20% lower power losses compared to previous-generation IGBT4 modules, the DP3 family supports reliable operation at elevated junction temperatures up to 175°C during overload conditions. These characteristics make the modules ideal for high-voltage switching in demanding environments such as industrial drives, renewable energy systems, traction applications, energy storage, and agricultural vehicles.
Designed in a phase-leg configuration, each DP3 module fits into a compact package measuring approximately 152 mm × 62 mm × 20 mm. This form factor allows a power density boost without the need to parallel multiple devices, reducing both system complexity and BOM costs. DP3 also serves as a second-source alternative to the widely used EconoDUAL™ format, enhancing flexibility and supply chain security for OEMs.
By integrating IGBT7 technology with optimized packaging, the DP3 modules improve switching protection, reduce conduction losses, and simplify design for motor drives and other power conversion systems. Microchip’s solution also helps designers address typical challenges such as dv/dt control, complex drive requirements, and limited overload capability in previous module generations.
DP3 modules can be integrated into broader system designs that include Microchip’s microcontrollers, microprocessors, connectivity, security, and power management devices—enabling faster time to market and more reliable solutions.
Microchip continues to expand its power portfolio with standard and custom solutions based on silicon and silicon carbide technologies, along with analog and digital control products. To learn more about the company’s power management offerings, visit Microchip’s official website.
Original – Microchip Technology
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LA Semiconductor LLC, a U.S.-owned pure-play semiconductor foundry specializing in analog, digital, and mixed-signal technologies, has appointed Macquarie Group to manage the marketing and sale of its wafer fabrication facility in Pocatello, Idaho.
The 31-acre site includes over 57,000 square feet of cleanroom space and more than 554,000 square feet of total building space, with capacity to expand significantly. The fab currently supports production technologies from 0.18µm to 1.5µm for BCD, CMOS, bipolar, MEMS, and discrete devices, and has photolithography capability down to 0.13µm. It also includes a prototype assembly lab and a 7,000-square-foot probe and test lab.
Acquired from onsemi in October 2022, the Pocatello facility has achieved its most stable and efficient operating levels, supported by proprietary process improvements. The introduction of 0.35µm and 0.5µm technology nodes has expanded the fab’s capability and attractiveness for buyers seeking de-risked, U.S.-based mixed-signal capacity.
The sale will be managed by Macquarie’s Commodities and Global Markets division, leveraging its semiconductor and technology team with over 25 years of experience and a track record of more than 50 fab sales and $3.5 billion in semiconductor equipment transactions.
LA Semiconductor’s leadership emphasized that the sale supports the company’s strategic focus on streamlining operations while maintaining its role as an ITAR-registered onshore foundry. The company will continue to serve high-performance markets including automotive, defense, aerospace, medical, and industrial sectors.
Original – LA Semiconductor
