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Toshiba Electronic Devices & Storage Corporation has introduced three new 650V silicon carbide (SiC) MOSFETs — TW027U65C, TW048U65C, and TW083U65C — built on its latest 3rd generation SiC chip technology. These devices are housed in compact surface-mount TOLL packages, delivering higher power density, lower losses, and easier integration for industrial and renewable energy applications.
SiC technology is at the heart of next-generation power electronics, and Toshiba’s move to a TOLL package represents a significant step forward. Compared to traditional through-hole packages (like TO-247), the new TOLL design:
- Reduces device volume by 80%+, enabling miniaturization and higher equipment power density.
- Lowers parasitic impedance, cutting down switching losses.
- Supports Kelvin connection, minimizing source inductance effects and enabling faster, more efficient switching.
In benchmark testing, the TW048U65C demonstrated:
- ~55% lower turn-on loss (Eon)
- ~25% lower turn-off loss (Eoff)
versus Toshiba’s earlier SiC MOSFETs in TO-247 packages. This means lower system losses and higher overall efficiency for power-hungry applications.
Toshiba is positioning these new SiC MOSFETs for a wide range of high-performance power systems, including:
- Switched-mode power supplies for servers, data centers, and communications
- EV charging stations
- Photovoltaic inverters for solar energy
- Uninterruptible power supplies (UPS)
Technical Highlights
- 3rd-Gen Toshiba SiC MOSFETs: Optimized drift resistance/channel resistance ratio ensures stable Rds(on) across temperature.
- Low Rds(on) × Qgd product: Reduces switching losses and improves efficiency.
- Improved diode performance: Low forward voltage (VDSF=-1.35V typ. at VGS=-5V).
- Surface-Mount TOLL Package: Supports automated assembly and improved thermal/electrical performance in compact systems.
With these new 650V TOLL-packaged SiC MOSFETs, Toshiba strengthens its position in the fast-growing wide bandgap semiconductor market. Expect further portfolio expansion as demand for higher efficiency, smaller form factors, and renewable/EV infrastructure accelerates.
Original – Toshiba
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Micro Commercial Components (MCC) has introduced its latest range of N-Channel Power MOSFETs in compact DFN5060 packages, targeting next-generation power management, switching, and control applications.
These devices leverage advanced Split Gate Trench (SGT) technology, enabling ultra-low on-resistance (Rds(on)), high efficiency, and robust thermal performance. Designed for both industrial and consumer electronics, the new MOSFETs deliver reliable operation even in space-constrained and thermally demanding environments.
Optimized Solutions for Diverse Applications
Each device in the series is tailored for specific design needs:
- MCAC150N15Y-TP – Offers a 150V rating with low Rds(on), ideal for battery management, lighting control, and DC-DC converters.
- MCAC2D7N03YL-TP – Provides ultra-low Rds(on) of 2.7mΩ, minimizing power loss, making it perfect for IoT load switching and relay driving.
- MCAC2D6N06YL-TP – Combines a 60V rating with 2.6mΩ Rds(on) and wide temperature operation (up to 175°C), well-suited for SMPS, motor control, and industrial equipment.
Key Advantages
- Advanced SGT MOSFET technology for enhanced performance
- Low Rds(on) values ensure minimal conduction losses
- DFN5060 package design delivers superior heat dissipation and low thermal resistance
- Wide operating temperature range for high-reliability systems
- High-density cell structures on select models for further efficiency gains
With their compact footprint, high efficiency, and robust thermal design, MCC’s new DFN5060 Power MOSFETs are poised to support a wide range of power management and control applications where space and performance are critical.
Original – Micro Commercial Components
