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Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems. The devices are available in multiple package options, including TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4. As a result, the product family supports both Top Side Cooling (TSC) and Bottom Side Cooling (BSC) approaches and offers developers a high degree of flexibility.
The devices are ideal for high- and medium-power switching mode power supplies (SMPS) in different applications, including AI servers, renewable energy, electric vehicle and e-mobility chargers, humanoid robot chargers, televisions, and drives.
The CoolSiC MOSFETs 650 V G2 are based on the second-generation (G2) of CoolSiC technology and offer improved figures of merit, higher reliability, and enhanced ease of use compared to the previous generation. The different packages offer various advantages: TOLL and ThinTOLL 8×8 packages provide high thermal cycle stability on the PCB and enable compact system designs.When used in SMPS, they reduce the space requirements on the PCB and lower manufacturing costs at the system level. The list of target applications for TOLL and ThinTOLL 8×8 has been expanded, enabling PCB designers to address cost-reduction challenges. The addition of TOLT strengthens Infineon’s growing TSC product family, which also includes CoolMOS™ 8, CoolSiC, CoolGaN™ and Optimos™. The TSC variants allow up to 95 percent direct heat dissipation and enable designers to use both sides of the PCB, improving space utilization and reducing parasitic effects.
The CoolSiC MOSFETs 650 V G2 75 mΩ are available now and come in TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4 packages. Further information is available at www.infineon.com/coolsic-650v.
Original – Infineon Technologies
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Navitas Semiconductor announced that its Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. Allexandre, who will also join the Company’s Board of Directors, succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025.
“We are excited to welcome Chris Allexandre as our new President and CEO,” said Richard J. Hendrix, Chairman of Navitas’ Board of Directors. “Chris is joining Navitas at a pivotal moment in its evolution. We believe his track record of driving transformation and delivering sustainable and profitable growth, operational excellence and business leadership in power semiconductor markets makes him the right leader for the next chapter of Navitas. On behalf of the Board of Directors, I’d like to thank Gene Sheridan for his vision in creating and leading Navitas over the last decade. Gene has established an exceptional company that stands ready to pursue the next phase of electrification in higher-power applications ideally suited for Navitas’ portfolio of GaN and SiC solutions. We deeply appreciate Gene’s leadership and impact, and his invaluable contributions to the Board’s succession planning and recruiting efforts, which have brought Navitas to this important transition point.”
“I am incredibly proud of what we have accomplished at Navitas,” said Sheridan, reflecting on his 11-year tenure at the company. “Building the industry’s only next-gen, pure-play power semi company has been the privilege of a lifetime. As we look to the future, I’m confident that Chris Allexandre is the right choice to lead Navitas in its mission to Electrify Our World.”
Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics Corporation, including Senior Vice President and General Manager of its Power Division from October 2023. Allexandre oversaw Renesas’ $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas’ acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas’ Chief Sales and Marketing Officer from 2019 to 2023.
“I am honored and thrilled to join Navitas and look forward to working with this world-class team to accelerate our leadership in GaN and SiC technologies,” said Allexandre. “With power demand growing in AI data center and critically needed energy infrastructure, I see promising opportunities to drive expansion in these important markets. I also want to thank Gene for his great support planning for this transition, and for everything he has done for Navitas.”
Prior to his tenure at Renesas, Allexandre held executive roles at Integrated Device Technology, Inc. (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor International, Inc. as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Allexandre began his career at Texas Instruments Incorporated, beginning in its New College Graduate rotation program, and over 16 years progressing in leadership through a series of business and sales roles based in Europe and China, becoming TI’s Vice President of Sales for EMEA and a member of TI’s strategic leadership team in 2012.
Allexandre’s extensive management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets.
Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l’Électronique et du Numérique (ISEN) in Lille, France.
Original – Navitas Semiconductor
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Cambridge GaN Devices announced the appointment of Robin Lyle as Vice President of R&D. Lyle’s appointment will further strengthen CGD’s mission to revolutionise power electronics and accelerate the transition to energy-efficient systems. A 30-year veteran of the power semiconductor industry, Lyle brings a wealth of experience and insight to the role.
ROBIN LYLE | VP, R&D, CGD
“In my previous positions I worked on higher power systems, modules and gate drivers, all of which are beginning to enjoy the size, efficiency and speed benefits that GaN brings. GaN will enable applications that haven’t been possible before, and our ICeGaN® ICs – by integrating the driver interface circuitry and protection features on the same GaN chip as the switch – make implementing GaN-based designs very easy.”
With an impressive background in analogue and power semiconductor technology, most recently at power module company, Dynex, Lyle’s experience, will prove invaluable as CGD develops its product portfolio to address the power-hungry demands of data centres, higher power industrial power supplies and EV applications such as DC-to-DC converters, on-board chargers and even traction inverters.
Lyle is also closely connected with academia, including a formal position at the University of Nottingham where he is part of the industrial advisory board for electronic engineering, helping to shape the syllabus and working with the under-graduates.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“We are delighted to name Robin as our new VP, R&D. CGD is a company founded on new ideas and innovation and this appointment strengthens our capabilities in high power systems, where GaN has a bright future.”
ROBIN LYLE | VP, R&D, CGD
“It’s exciting to join the international and diverse team here at CGD, and to be part of the next generation of power technology. Our focus is to continue to develop innovative GaN solutions that address the challenges customers face as they move up in power, and to make GaN easy to use.”
Original – Cambridge GaN Devices
