• InnoScience Unveils “Chip Era” Vision at IPF 2025, Driving GaN-Powered Transformation in Power Electronics

    InnoScience Unveils “Chip Era” Vision at IPF 2025, Driving GaN-Powered Transformation in Power Electronics

    1 Min Read

    InnoScience announced its vision for the “Chip Era” of power electronics. Speaking at the IPF 2025 Conference, Chairperson Dr. Luo Weiwei highlighted how gallium nitride (GaN) is transforming the industry through higher efficiency, automation, and standardization.

    GaN devices deliver up to 15x lower turn-off losses and 3x lower turn-on losses versus silicon, enabling standardized zero-voltage switching designs with superior efficiency and consistency. By integrating passive components onto PCBs, GaN systems also unlock automated manufacturing and predictable EMI performance, reducing cost wile improving reliability.

    “GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”

    GaN adoption is expanding across AI servers and data centers, electric vehicles, and robotics, where it delivers higher density, lower energy uses, and enhanced, precision. With 8-inch GaN-on-Si mass production, fully integrated design-to-packaging capabilities and partnerships with leading global technology companies, InnoScience is strategically positioned to drive the compound semiconductor revolution.

    Original – Innoscience Technology

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  • Toshiba and SICC Sign MOU to Collaborate on Advancing High-Quality SiC Power Semiconductor Wafers for Expanding Global Demand

    Toshiba and SICC Sign MOU to Collaborate on Advancing High-Quality SiC Power Semiconductor Wafers for Expanding Global Demand

    3 Min Read

    Toshiba Electronic Devices & Storage Corporation (“Toshiba”) and SICC Co., Ltd. (“SICC”) have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support.

    Power semiconductors convert and control power supply, and are seen an essential tool for cutting power consumption in all kinds of electrical and electronic equipment, and for achieving carbon neutrality. Along with increasing efficiency requirements, demand for power semiconductors is expected to grow. This is particularly true for power semiconductors formed on SiC wafers, which operate in high-temperature environments, such as in electric vehicles and renewable energy systems. But this is an area where securing reliability and stable quality is an additional requirement to power efficiency, and can still be a challenge.

    Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.

    Since its founding in 2010, SICC has been exclusively dedicated to the development and production of single-crystal SiC wafers. With a business philosophy centered on quality and technological development, SICC holds a top-five position globally in terms of related patents. Following its initial public offering in 2022, the first in China to focus on SiC, SICC has achieved vertical expansion in global business and market share.

    In 2024, the company introduced the market’s first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type. Moving forward, SICC aims to continue to contribute to its customers through quality and cutting-edge technology. In the proposed collaboration with Toshiba, SICC aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer element technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.

    Toshiba and SICC will continue to discuss specific collaboration details that can lead to the development of their respective businesses based on the MOU signed this time.

    Original – Toshiba

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  • Power Integrations Unveils a PowiGaN™-Based Reference Kit to Boost Solar Race Car Efficiency Ahead of Bridgestone World Solar Challenge

    Power Integrations Unveils a PowiGaN™-Based Reference Kit to Boost Solar Race Car Efficiency Ahead of Bridgestone World Solar Challenge

    3 Min Read

    Power Integrations is rolling out a new reference design kit tailored specifically for solar-powered race cars as 37 student teams prepare to race across the Outback in the Bridgestone World Solar Challenge starting August 24.

    RDK-85SLR includes everything needed to create a 46-watt power supply. Solar race car teams can get the kit free by registering online.

    The kit, RDK-85SLR, features the PI™ InnoSwitch™3-AQ IC , which incorporates PI’s PowiGaN™ gallium-nitride switch technology. The kit is inspired by a design created by PI’s PowerPros℠ online support engineers in collaboration with the ETH Zurich aCentauri team, whose #85 ‘Silvretta’ challenger-class car is using the design to maximize efficiency in its auxiliary power supply.

    “Thousands of engineering students participate in solar car challenges around the world each year, and these innovators will help bring about a more sustainable future,” said Andy Smith, director of technical outreach and training for Power Integrations. “We are providing this reference kit to help young engineers take advantage of the latest, most energy-efficient technologies, such as PowiGaN, in their designs.”

    The design kit includes everything needed to create a 46-watt power supply that delivers up to 80 watts for short periods—making it ideal for use as an auxiliary power supply in a solar race car. It employs the company’s InnoSwitch3-AQ flyback power supply IC with a highly efficient PowiGaN switch and eliminates the need for a heatsink, enabling more compact, lightweight, and cost-effective designs. Contents of the kit include a sample power supply, four InnoSwitch3-AQ ICs, and an unpopulated PCB. It is backed by a report containing power supply and magnetics transformer build instructions, schematics, a PCB layout guide, a parts list and comprehensive performance data. Live tech support is available from Power Integrations’ PowerPros team.

    “We proved PowiGaN’s reliability, performance and efficiency in the Bridgestone World Solar Challenge in 2023,” stated Aaron Griesser, lead electrical engineer from the 2023 aCentauri team. “We achieved 95 percent efficiency across both light and full loads with a broad output range of 5 to 60 W. Additionally, the scrutineering judges were astounded to see an auxiliary power supply without a heatsink.”

    Power Integrations is a proud sponsor of the aCentauri team and will be reporting on the race from Mr. Green’s Blog and PI’s social media channels using hashtag #PowiGaNVan.

    Reference design kit RDK-85SLR is priced at $50. Solar race car teams can get the kit free by registering online.

    Original – Power Integrations

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