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Kyma Technologies in the US and Novel Crystal Technology (NCT) in Japan, both global leaders in Gallium Oxide (Ga2O3) technology, announced their strategic collaboration on development of Ga2O3 epiwafers for high voltage power electronics applications. This partnership aims to accelerate the development and commercialization of Ga2O3 devices for power electronics applications, including electric vehicles, renewable energy, aerospace, and industrial systems.
Gallium oxide offers significant advantages over traditional silicon and other wide-bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN), including a higher breakdown electric field and the potential for lower production costs. However, a major industry bottleneck remains the limited availability of device-grade Ga2O3 epitaxial wafers with consistently low defects and scalable production methods.
By combining NCT’s expertise in producing high-quality bulk Ga2O3 substrates with Kyma’s advanced epitaxial growth capabilities, the two companies will develop processes to produce large area (150 mm diameter) epiwafers suitable for multi-kV level power devices.
Kyma and NCT have already worked together for many years (see HVPE-Based Gallium Oxide Epiwafer Development) and are now excited to announce that Kyma epi services on NCT substrates (up to 100 mm diameter) are available for sale to the broader research and development community. These epiwafers are expected to enable a new generation of power semiconductor devices that deliver higher efficiency and performance in demanding applications. For on-going power device development work, the technical teams at Kyma and NCT will be collaborating closely, including on specific customer requirements.
“Our partnership leverages the best of both companies’ technologies to push the boundaries of Ga2O3 epiwafer production,” said Heather Splawn, President & CEO of Kyma. “Novel Crystal Technology manufactures the best Ga2O3 substrates in the world, and we are thrilled that Kyma can now offer our unique epi growth on those substrates to our customers.”
Akito Kuramata, President & CEO of NCT, added, “We are excited to work with Kyma Technologies to further develop high-quality Ga2O3 epitaxial wafers. Together, we aim to accelerate the adoption of Ga2O3 devices worldwide, supporting critical industries and technology sectors.”
Original – Novel Crystal Technology
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As large AI models and high-performance computing place higher demands on power supply systems, Innoscience announced a collaboration with NVIDIA, a global leader in AI technology, to jointly promote the large-scale implementation of an 800 VDC power architecture in AI data centers.
NVIDIA’s 800 VDC architecture is the latest generation of power systems specifically designed to efficiently power future megawatt-scale computing infrastructure. Compared to traditional 54 V power systems, the 800 VDC architecture offers significant advantages in system efficiency, heat dissipation, and reliability, enabling it to support an 100x to 1000x increase in AI computing power.
As the world’s leading GaN IDM, Innoscience’s third-generation GaN devices offer exceptional high frequency, high efficiency, and high power density. They provide NVIDIA’s 800 VDC architecture with a full-link GaN power supply solution, from 800 V input to GPU terminals, covering 15 V to 1200 V. With the deep integration of 800 VDC power architecture and GaN technology, AI data centers will achieve a quantum leap from kilowatts to megawatts in the coming years, ushering in an era of more efficient, reliable, and greener AI computing.
Original – Innoscience Technology
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The District Court Munich, Germany (Landgericht München I) ruled in favor of Infineon Technologies AG in a first instance patent infringement case concerning gallium nitride (GaN) technology between Infineon and Innoscience. The case centers on the unauthorized use of Infineon’s patented GaN technologies by Innoscience. GaN plays a pivotal role in enabling high-performance and energy-efficient power systems in a broad range of applications, including renewable energy systems, data centers, industrial automation, and electric vehicles (EVs).
The Munich court’s decision was issued in a patent infringement case brought by Infineon against Innoscience. The Munich District Court found that Infineon´s patent was infringed by GaN products that Innoscience is offering in Germany. The decision in particular prohibits Innoscience from manufacturing, selling, or marketing the infringing products in Germany. Additionally, the decision requires Innoscience to pay damages to Infineon.
The decision of the District Court underscores the value of Infineon’s contributions to GaN technology and its ongoing commitment to ensuring fair competition in the market. “The ruling is a testament to the strength of Infineon’s intellectual property and confirms Infineon’s commitment to vigorously defend its intellectual property against infringements,” says Johannes Schoiswohl, Senior Vice President and Head of Infineon’s GaN Systems Business Line.
Infineon continuously strengthens its position as a leading integrated device manufacturer (IDM) in the GaN market with the industry’s broadest IP portfolio, comprising approximately 450 GaN patent families. The company remains dedicated to fostering innovation and advancing semiconductor technology to address the world’s most pressing challenges, from decarbonization to digital transformation.
Original – Infineon Technologies
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Magnachip Semiconductor Corporation announced financial results for the second quarter 2025.
Y.J. Kim, Magnachip’s CEO said, “In Q2, Magnachip delivered our fifth consecutive quarter of year-over-year revenue growth from continuing operations, driven primarily by strong performances in our communications and computing applications businesses. The quarter also benefited from some pull-in activity by customers, which contributed to the overall strength of the results. In industrial applications, we continued to see solid demand across key end markets, including e-motors, LED lighting, and 5G battery management systems.”
Mr. Kim added, “Looking to the back half of the year, we face an uncertain environment due to tariffs and pricing pressures on older-generation products, particularly in China. As a result, we currently anticipate a softer second half of the year relative to our prior expectations, and we now forecast 2025 revenue from continuing operations to be flattish as compared to our prior outlook for mid-to-high single-digit growth.”
Mr. Kim added, “While headwinds are impacting our near-term outlook, we are being proactive and decisive by taking structural actions to optimize operational efficiency and we are accelerating the development of a full array of a new generation of feature-rich power products which we expect will command higher prices and margins to drive future growth and profitability. We remain firmly committed to our 3-3-3 strategy of achieving $300 million in revenue with 30% gross margin, although the exact timing will depend largely upon various macroeconomic factors.”
Q2 Results Summary
- Consolidated revenue from continuing operations (which includes Power Analog Solutions (“PAS”) and Power IC (“PIC”) businesses) increased 8.1% year-over-year to $47.6 million and was above the mid-point of our guidance range of $45.0 to $49.0 million.
- Consolidated gross profit margin from continuing operations of 20.4% was within our guidance range of 19.5% to 21.5%.
- Repurchased approximately 0.7 million shares for an aggregate purchase price of $2.3 million.
Q2 2025 Highlights
- Q2 was the fifth consecutive quarter of year-over-year growth from continuing operations primarily driven by Power Analog Solutions (PAS) growth in communications and computing applications, as well as strength in Power IC products.
- PAS revenue from the communication applications market increased 46.7% year-over-year, representing 20% of PAS revenue, while computing applications market revenue grew 45.1% year-over year and represented 8% of PAS revenue.
- Power IC (PIC) business increased 11.1% year-over-year in Q2 driven by strength for both TV-LED and OLED power ICs.
- Launched 28 new-generation PAS products in the first half of 2025.
- Had 71 design-wins in Q2, up 61% from the 44 wins achieved in the year ago quarter. The design-wins include both our new generation Gen 6 Super Junction products and low-voltage Gen 8 MOSFETs, as well as our prior generation medium-voltage and Super Junction products.
Original – Magnachip Semiconductor
