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Toshiba Electronic Devices & Storage Corporation and BASiC Semiconductor Co., Ltd. have signed a memorandum of understanding (MOU) on building a strategic partnership in power module products. By combining Toshiba Electronic Devices & Storage’s high-performance, high-quality power semiconductor technologies, including silicon carbide (SiC) and insulated gate bipolar transistors (IGBT) with BASiC’s high-efficiency and high-reliability module architecture, the two companies will deploy competitive products for rapidly evolving automotive and industrial applications worldwide.
The high power density and stable quality of Toshiba Electronic Devices & Storage’s power semiconductors contribute to improved power conversion efficiency and reduced environmental impacts. The company’s SiC metal-oxide-semiconductor field-effect transistors (MOSFET) secure low on-resistance and high reliability, while its IGBT have a rich market record of delivering high current and high reliability.
BASiC is a leading company in the SiC power devices. It develops SiC chips and power modules, and its many products that meet automotive standards and for industrial applications have been adopted in a various fields, including electric vehicles, solar power generation and storage systems.
This strategic partnership between the companies will strengthen the market competitiveness of both and enable the provision of innovative solutions.
Toshiba Electronic Devices & Storage will continue to meet the diverse needs of its customers and to contribute to mitigating global warming by developing reliable, higher performance products. The two companies will also consider various forms of cooperation and aim to grow and develop both businesses while supporting the realization of a sustainable society.
Toshiba Electronic Devices & Storage’s sales subsidiary in China, Toshiba Devices & Storage (Shanghai) Co., Ltd., will jointly exhibit with BASiC and BASiC’s affiliate, Bronze Technologies Ltd., at “PCIM Asia Shanghai 2025,” which will be held in Shanghai from September 24 to 26, 2025.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has introduced three new 650V silicon carbide (SiC) MOSFETs — TW027U65C, TW048U65C, and TW083U65C — built on its latest 3rd generation SiC chip technology. These devices are housed in compact surface-mount TOLL packages, delivering higher power density, lower losses, and easier integration for industrial and renewable energy applications.
SiC technology is at the heart of next-generation power electronics, and Toshiba’s move to a TOLL package represents a significant step forward. Compared to traditional through-hole packages (like TO-247), the new TOLL design:
- Reduces device volume by 80%+, enabling miniaturization and higher equipment power density.
- Lowers parasitic impedance, cutting down switching losses.
- Supports Kelvin connection, minimizing source inductance effects and enabling faster, more efficient switching.
In benchmark testing, the TW048U65C demonstrated:
- ~55% lower turn-on loss (Eon)
- ~25% lower turn-off loss (Eoff)
versus Toshiba’s earlier SiC MOSFETs in TO-247 packages. This means lower system losses and higher overall efficiency for power-hungry applications.
Toshiba is positioning these new SiC MOSFETs for a wide range of high-performance power systems, including:
- Switched-mode power supplies for servers, data centers, and communications
- EV charging stations
- Photovoltaic inverters for solar energy
- Uninterruptible power supplies (UPS)
Technical Highlights
- 3rd-Gen Toshiba SiC MOSFETs: Optimized drift resistance/channel resistance ratio ensures stable Rds(on) across temperature.
- Low Rds(on) × Qgd product: Reduces switching losses and improves efficiency.
- Improved diode performance: Low forward voltage (VDSF=-1.35V typ. at VGS=-5V).
- Surface-Mount TOLL Package: Supports automated assembly and improved thermal/electrical performance in compact systems.
With these new 650V TOLL-packaged SiC MOSFETs, Toshiba strengthens its position in the fast-growing wide bandgap semiconductor market. Expect further portfolio expansion as demand for higher efficiency, smaller form factors, and renewable/EV infrastructure accelerates.
Original – Toshiba
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Micro Commercial Components (MCC) has introduced its latest range of N-Channel Power MOSFETs in compact DFN5060 packages, targeting next-generation power management, switching, and control applications.
These devices leverage advanced Split Gate Trench (SGT) technology, enabling ultra-low on-resistance (Rds(on)), high efficiency, and robust thermal performance. Designed for both industrial and consumer electronics, the new MOSFETs deliver reliable operation even in space-constrained and thermally demanding environments.
Optimized Solutions for Diverse Applications
Each device in the series is tailored for specific design needs:
- MCAC150N15Y-TP – Offers a 150V rating with low Rds(on), ideal for battery management, lighting control, and DC-DC converters.
- MCAC2D7N03YL-TP – Provides ultra-low Rds(on) of 2.7mΩ, minimizing power loss, making it perfect for IoT load switching and relay driving.
- MCAC2D6N06YL-TP – Combines a 60V rating with 2.6mΩ Rds(on) and wide temperature operation (up to 175°C), well-suited for SMPS, motor control, and industrial equipment.
Key Advantages
- Advanced SGT MOSFET technology for enhanced performance
- Low Rds(on) values ensure minimal conduction losses
- DFN5060 package design delivers superior heat dissipation and low thermal resistance
- Wide operating temperature range for high-reliability systems
- High-density cell structures on select models for further efficiency gains
With their compact footprint, high efficiency, and robust thermal design, MCC’s new DFN5060 Power MOSFETs are poised to support a wide range of power management and control applications where space and performance are critical.
Original – Micro Commercial Components
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Micro Commercial Components (MCC) has expanded its power semiconductor portfolio with the release of the MIUZ100R12GJTL-BP, a robust 1200V, 100A IGBT module designed for applications requiring both high voltage and high current performance.
Engineered for efficiency, the device offers a low VCE(sat) of just 2.2V at 150°C, minimizing conduction losses. Its advanced device structure also keeps switching losses under control, ensuring reliable operation even under heavy load conditions.
The module comes in a SOT-227 compatible GJ package with an isolated copper baseplate and Direct Bonded Copper (DBC) technology, delivering excellent thermal management and electrical isolation. With a junction-to-case thermal resistance of 0.2 K/W and the ability to operate at junction temperatures up to 175°C, the MIUZ100R12GJTL-BP is well-suited for applications where efficiency, compactness, and long-term reliability are essential.
Features & Benefits:
- Low inductance for improved switching performance
- Low switching losses for higher efficiency
- Isolated copper baseplate using DBC (Direct Bonded Copper) technology for superior heat dissipation
- High operating junction temperature ≤175°C for robust thermal stability
- VCE(sat) with positive temperature coefficient, enabling easier and safer parallel operation
- Compact GJ package compatible with SOT-227
With these characteristics, the new MCC IGBT module is positioned as an ideal solution for industrial systems, power conversion, and renewable energy applications, where stable performance and energy efficiency are critical.
Original – Micro Commercial Components
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Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems. The devices are available in multiple package options, including TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4. As a result, the product family supports both Top Side Cooling (TSC) and Bottom Side Cooling (BSC) approaches and offers developers a high degree of flexibility.
The devices are ideal for high- and medium-power switching mode power supplies (SMPS) in different applications, including AI servers, renewable energy, electric vehicle and e-mobility chargers, humanoid robot chargers, televisions, and drives.
The CoolSiC MOSFETs 650 V G2 are based on the second-generation (G2) of CoolSiC technology and offer improved figures of merit, higher reliability, and enhanced ease of use compared to the previous generation. The different packages offer various advantages: TOLL and ThinTOLL 8×8 packages provide high thermal cycle stability on the PCB and enable compact system designs.When used in SMPS, they reduce the space requirements on the PCB and lower manufacturing costs at the system level. The list of target applications for TOLL and ThinTOLL 8×8 has been expanded, enabling PCB designers to address cost-reduction challenges. The addition of TOLT strengthens Infineon’s growing TSC product family, which also includes CoolMOS™ 8, CoolSiC, CoolGaN™ and Optimos™. The TSC variants allow up to 95 percent direct heat dissipation and enable designers to use both sides of the PCB, improving space utilization and reducing parasitic effects.
The CoolSiC MOSFETs 650 V G2 75 mΩ are available now and come in TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4 packages. Further information is available at www.infineon.com/coolsic-650v.
Original – Infineon Technologies
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Navitas Semiconductor announced that its Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. Allexandre, who will also join the Company’s Board of Directors, succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025.
“We are excited to welcome Chris Allexandre as our new President and CEO,” said Richard J. Hendrix, Chairman of Navitas’ Board of Directors. “Chris is joining Navitas at a pivotal moment in its evolution. We believe his track record of driving transformation and delivering sustainable and profitable growth, operational excellence and business leadership in power semiconductor markets makes him the right leader for the next chapter of Navitas. On behalf of the Board of Directors, I’d like to thank Gene Sheridan for his vision in creating and leading Navitas over the last decade. Gene has established an exceptional company that stands ready to pursue the next phase of electrification in higher-power applications ideally suited for Navitas’ portfolio of GaN and SiC solutions. We deeply appreciate Gene’s leadership and impact, and his invaluable contributions to the Board’s succession planning and recruiting efforts, which have brought Navitas to this important transition point.”
“I am incredibly proud of what we have accomplished at Navitas,” said Sheridan, reflecting on his 11-year tenure at the company. “Building the industry’s only next-gen, pure-play power semi company has been the privilege of a lifetime. As we look to the future, I’m confident that Chris Allexandre is the right choice to lead Navitas in its mission to Electrify Our World.”
Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics Corporation, including Senior Vice President and General Manager of its Power Division from October 2023. Allexandre oversaw Renesas’ $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas’ acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas’ Chief Sales and Marketing Officer from 2019 to 2023.
“I am honored and thrilled to join Navitas and look forward to working with this world-class team to accelerate our leadership in GaN and SiC technologies,” said Allexandre. “With power demand growing in AI data center and critically needed energy infrastructure, I see promising opportunities to drive expansion in these important markets. I also want to thank Gene for his great support planning for this transition, and for everything he has done for Navitas.”
Prior to his tenure at Renesas, Allexandre held executive roles at Integrated Device Technology, Inc. (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor International, Inc. as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Allexandre began his career at Texas Instruments Incorporated, beginning in its New College Graduate rotation program, and over 16 years progressing in leadership through a series of business and sales roles based in Europe and China, becoming TI’s Vice President of Sales for EMEA and a member of TI’s strategic leadership team in 2012.
Allexandre’s extensive management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets.
Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l’Électronique et du Numérique (ISEN) in Lille, France.
Original – Navitas Semiconductor
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Cambridge GaN Devices announced the appointment of Robin Lyle as Vice President of R&D. Lyle’s appointment will further strengthen CGD’s mission to revolutionise power electronics and accelerate the transition to energy-efficient systems. A 30-year veteran of the power semiconductor industry, Lyle brings a wealth of experience and insight to the role.
ROBIN LYLE | VP, R&D, CGD
“In my previous positions I worked on higher power systems, modules and gate drivers, all of which are beginning to enjoy the size, efficiency and speed benefits that GaN brings. GaN will enable applications that haven’t been possible before, and our ICeGaN® ICs – by integrating the driver interface circuitry and protection features on the same GaN chip as the switch – make implementing GaN-based designs very easy.”
With an impressive background in analogue and power semiconductor technology, most recently at power module company, Dynex, Lyle’s experience, will prove invaluable as CGD develops its product portfolio to address the power-hungry demands of data centres, higher power industrial power supplies and EV applications such as DC-to-DC converters, on-board chargers and even traction inverters.
Lyle is also closely connected with academia, including a formal position at the University of Nottingham where he is part of the industrial advisory board for electronic engineering, helping to shape the syllabus and working with the under-graduates.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“We are delighted to name Robin as our new VP, R&D. CGD is a company founded on new ideas and innovation and this appointment strengthens our capabilities in high power systems, where GaN has a bright future.”
ROBIN LYLE | VP, R&D, CGD
“It’s exciting to join the international and diverse team here at CGD, and to be part of the next generation of power technology. Our focus is to continue to develop innovative GaN solutions that address the challenges customers face as they move up in power, and to make GaN easy to use.”
Original – Cambridge GaN Devices
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Wolfspeed, Inc. announced its results for the fourth quarter of fiscal 2025 and the full fiscal year.
Fourth Quarter Fiscal 2025 Highlights (Continuing Operations)
- Revenue of $197 million, compared to $201 million in Q4 FY2024. Mohawk Valley Fab contributed $94.1 million, more than doubling from $41 million a year ago.
- GAAP gross margin of (13)%, compared to 1% in the prior year.
- Non-GAAP gross margin of (1)%, compared to 5% in Q4 FY2024.
- GAAP loss per share of ($4.30), compared to ($1.39) in the prior year.
- Non-GAAP loss per share of ($0.77), an improvement from ($0.89) in Q4 FY2024.
Full Fiscal Year 2025 Highlights (Continuing Operations)
- Revenue of $758 million, compared to $807 million in FY2024.
- GAAP gross margin of (16)%, down from 10% in FY2024.
- Non-GAAP gross margin of 2%, compared to 13% in the prior year.
- GAAP loss per share of ($11.39), compared to ($4.56) in FY2024.
- Non-GAAP loss per share of ($3.32), compared to ($2.59) in the prior year.
Business Segment Results
- Power Products revenue: $118.6 million in Q4 and $414.0 million for FY2025.
- Materials Products revenue: $78.4 million in Q4 and $343.6 million for FY2025.
“Reflecting on my first three months with Wolfspeed, I am more confident than ever in our decision to pursue silicon carbide leadership,” said Robert Feurle, Wolfspeed’s Chief Executive Officer. “With our world-class, vertically integrated facilities, an expanded leadership team, and strong IP portfolio, Wolfspeed is well-positioned to be the global leader in SiC technology. Our next milestone is court approval of our Plan of Reorganization next month, which will allow us to emerge from Chapter 11 with a stronger financial structure.”
Original – Wolfspeed
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InnoScience announced its vision for the “Chip Era” of power electronics. Speaking at the IPF 2025 Conference, Chairperson Dr. Luo Weiwei highlighted how gallium nitride (GaN) is transforming the industry through higher efficiency, automation, and standardization.
GaN devices deliver up to 15x lower turn-off losses and 3x lower turn-on losses versus silicon, enabling standardized zero-voltage switching designs with superior efficiency and consistency. By integrating passive components onto PCBs, GaN systems also unlock automated manufacturing and predictable EMI performance, reducing cost wile improving reliability.
“GaN allows us to move from craftsmanship to science, from manual assembly to automation, and from fragmentation to standardization,” said Dr Luo. “This marks the arrival of the chip era for power electronics.”
GaN adoption is expanding across AI servers and data centers, electric vehicles, and robotics, where it delivers higher density, lower energy uses, and enhanced, precision. With 8-inch GaN-on-Si mass production, fully integrated design-to-packaging capabilities and partnerships with leading global technology companies, InnoScience is strategically positioned to drive the compound semiconductor revolution.
Original – Innoscience Technology
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) and SICC Co., Ltd. (“SICC”) have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support.
Power semiconductors convert and control power supply, and are seen an essential tool for cutting power consumption in all kinds of electrical and electronic equipment, and for achieving carbon neutrality. Along with increasing efficiency requirements, demand for power semiconductors is expected to grow. This is particularly true for power semiconductors formed on SiC wafers, which operate in high-temperature environments, such as in electric vehicles and renewable energy systems. But this is an area where securing reliability and stable quality is an additional requirement to power efficiency, and can still be a challenge.
Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.
Since its founding in 2010, SICC has been exclusively dedicated to the development and production of single-crystal SiC wafers. With a business philosophy centered on quality and technological development, SICC holds a top-five position globally in terms of related patents. Following its initial public offering in 2022, the first in China to focus on SiC, SICC has achieved vertical expansion in global business and market share.
In 2024, the company introduced the market’s first 12-inch SiC wafer, and in 2025 it announced 12-inch wafers for all products, including n-type, semi-insulating, and p-type. Moving forward, SICC aims to continue to contribute to its customers through quality and cutting-edge technology. In the proposed collaboration with Toshiba, SICC aims to link SiC power semiconductor manufacturers’ requirements and expectations for SiC wafer element technology to improved wafer quality and reliability, and to contribute to the expansion of the SiC power semiconductor market.
Toshiba and SICC will continue to discuss specific collaboration details that can lead to the development of their respective businesses based on the MOU signed this time.
Original – Toshiba
