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Toshiba Corporation has developed a resin-insulated SiC power semiconductor module that greatly improves power density, which represents the capacity to process power per unit area, by using resin as the insulating substrate through technology for the distributed layout design of small-area chips and design optimization technology using AI, which are unique to Toshiba.
SiC power modules can provide high-capacity power conversion under high voltage and high current, and are becoming widespread in power converters for renewable energy, industry, and electricity-driven transportation such as railroads.
Semiconductor modules use an insulating substrate in order to prevent electrical interference with surrounding devices; although resin insulating substrates offer lower cost and longer service life with durability against thermal fatigue, they also have the problems of lower thermal conductivity and higher thermal resistance compared with the ceramic insulating substrates now in widespread use. A large cooling system is needed in order to maintain high performance, but this creates the separate problem of increasing the size of the overall device.
Toshiba has increased the thermal dissipation area and reduced thermal resistance by decreasing the area of chips mounted on a module in comparison with conventional chips and arranging a larger number of chips spread around the entire module. As the number of chips increases, the number of parameters for designing the chip layout also increases and the overall optimal design, including the electrical and thermal characteristics, becomes more difficult. However, an optimal design was possible by means of a unique optimization algorithm using AI.
When the distributed layout design of small-area chips and design optimization technology using AI were employed and a prototype resin-insulated SiC power module was tested, it was found to have 21% lower thermal resistance compared with conventional ceramic-insulated SiC power modules. Furthermore, when the developed SiC power modules were used in a general inverter, a trial calculation found that the cooling system size could be reduced by 61%. This technology is expected to enable downsizing of power conversion devices, thereby saving space and reducing costs. This is expected to contribute to achieving carbon neutrality, for example, through further expansion of electric transportation and renewable energy.
Toshiba presented details of this technology at the 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025, the foremost international conference in the power semiconductor industry, which was held in Kumamoto, Japan from June 1 to June 5.
Development background
Power semiconductors, which convert electrical power into an appropriate form (voltage, direct/alternating current, frequency) for efficiently operating equipment, are expected to have increasing market growth in the future against a backdrop of increased electricity generation due to the spread of electric vehicles and renewable energy for achieving carbon neutrality. SiC power modules are equipped with multiple SiC power semiconductor chips capable of high-efficiency power conversion to enable high-capacity power conversion of high voltages and high currents. These modules are becoming widespread in power converters for renewable energy, industry, and electric transportation such as railroads.
The power modules that are currently widely commercialized employ ceramic insulation. Although the Toshiba group also manufactures and sells ceramic-insulated SiC power modules through Toshiba Electronic Devices and Storage Corporation, which is responsible for Toshiba’s semiconductor business, at the same the company has been working on developing resin-insulated SiC power modules that utilize a resin insulating substrate for next-generation devices.
Resin-insulated devices are expected to have advantages of lower cost and longer service life with durability against thermal fatigue in comparison with ceramic insulation, but they also suffer from the problems of low thermal conductivity and high thermal resistance. If the thermal resistance is high, it becomes difficult to transport heat through the material, trapping the heat inside. This makes it impossible to effectively dissipate the heat generated by the semiconductor module, causing power loss and consequently causes a decrease in power semiconductor performance including power density.
Power modules generate heat regardless of the type of insulation, including ceramic, meaning that a cooling system is required when incorporating them into power conversion devices in order to remove the generated heat and reduce power losses. Because resin insulating substrates are characterized by poor heat dissipation in comparison with ceramic, a larger cooling system is needed in order to maintain high performance, leading to the further problem that the device becomes large.
Features of the technology
To address the above issues, Toshiba decreased the area of the SiC power semiconductor chips installed in the module, increased the number of mounted chips, and arranged the chips distributed across the entire module. Because the heat dissipation area of the chips is large with a radiance shape toward the heatsink at the bottom of the module, the heat dissipation area increases as the number of chips increases, leading to improved thermal resistance.
Figure 1: Enlargement of thermal dissipation area by layout of small-area chips
However, if the chips are not arranged appropriately, interference arises between the heat dissipation areas, and the heat dissipation area cannot be enlarged efficiently. Furthermore, as the number of chips increases, the number of module design parameters increases, and it becomes difficult to optimize the overall design taking into account both electrical characteristics such as parasitic resistance and switching losses and thermal characteristics.
Therefore, a novel AI was used to optimize the module design parameters such as the chip layout and the layout of the copper pattern on which the chips are mounted. As a result, the upper limit of the thermal dissipation area and the number of chips were increased and thermal resistance, parasitic resistance, and switching losses were improved.
Figure 2: Schematic of module design parameter optimization and change in module characteristics with optimization
When a prototype of the module structure with the optimized design parameters was created and tested, the prototype resin-insulated SiC power module was found to have 21% lower thermal resistance, 21% lower parasitic resistance, and 19% lower switching loss compared with conventional ceramic-insulated SiC power modules. Although large thermal resistance has been a problem with resin-insulated SiC power modules, the proposed technology not only achieved a large improvement in thermal resistance, but also improved the parasitic resistance and switching losses, and the performance far exceeded that of ceramic-insulated SiC power modules.
The reduction effect on the cooling system size when using the developed module in a typical inverter was estimated based on these results, with a trial calculation showing a reduction of 61% in the cooling system size. This technology is expected to enable smaller power conversion devices, leading to space saving and cost reduction. It is also expected to contribute to achieving carbon neutrality, for example, by further increasing the spread of electric transportation and renewable energy.
Figure 3: External appearance of developed SiC power module and improvement in obtained characteristics
Future developments
Toshiba aims to conduct further research and development of this technology while also considering the development of power modules with different current and withstand voltage ratings. It also aims to quickly commercialize this technology at Toshiba Electronic Devices and Storage Corporation. Toshiba is working to contribute to achieving carbon neutrality by increasing the performance of various devices for power electronics applications.
Original – Toshiba
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Wolfspeed, Inc. announced the appointment of Gregor van Issum as Chief Financial Officer (CFO), effective September 1, 2025, following a comprehensive review of internal and external candidates. Van Issum succeeds Kevin Speirits, who is serving as Interim Chief Financial Officer and will remain with Wolfspeed to support the Company and ensure a smooth transition. He will be relocating to North Carolina and be based at company headquarters in Durham, NC, reporting to Wolfspeed CEO, Robert Feurle.
Van Issum brings more than 20 years of experience in transformational restructuring and strategic financing positions across the technology industry. Through senior roles at semiconductor manufacturers ams-OSRAM AG and NXP Semiconductors N.V., he gained an in-depth understanding of how to lead organizations through dynamic business cycles. Most recently, van Issum served as Executive Vice President, Group Controller at ams-OSRAM, where he was deeply involved in driving the financial performance of this multi-billion Euro revenue company. He also led ams-OSRAM’s cost savings programs and sales initiatives in his dual role as the company’s Chief Transformation and Performance Officer.
“We are excited to welcome Gregor to our team as Wolfspeed enters a new era,” said Robert Feurle, Chief Executive Officer. “I witnessed Gregor’s strong analytical and leadership skills firsthand during our time working together at ams-OSRAM. Gregor has helped lead large, multibillion euro businesses with complex manufacturing operations, which will be invaluable to Wolfspeed as we unlock the potential of our purpose-built 200mm platform. The Board and I look forward to collaborating with Gregor as we position Wolfspeed for long-term growth and profitability.”
Van Issum gained valuable M&A and IT experience at ams-OSRAM, where he was responsible for executing and delivering on the business targets for the transactions and managing the strategic direction of the company’s systems. He previously served as Vice President, Strategy of NXP Semiconductors’ Secure Transactions and Identification Solutions segment and served as the CFO of the Secure Identification Solutions and Analog Mixed Signal units.
“In this new role, my priority will be providing Wolfspeed’s investors with transparency and clarity, especially during this transformative period,” said van Issum. “Building on recent steps to restructure Wolfspeed’s balance sheet, I will draw on my experience navigating complex business cycles to help create a capital structure that offers agility to respond to rapid shifts in the market. My background in transformation and restructuring also positions me to support Wolfspeed’s strategic focus on improving profitability. At this pivotal time in the Company’s life cycle, I am honored to help guide Wolfspeed as it leverages its competitive advantages—world-class facilities, exceptional talent, and robust intellectual property—to advance the incredible progress that Robert and the Wolfspeed team have made in recent months and solidify its leadership in silicon carbide technology.”
Van Issum’s appointment follows the addition of Dr. David Emerson, who joined Wolfspeed in May in the newly created role of Chief Operating Officer. With a refreshed leadership team, Wolfspeed is well positioned to navigate near-term market dynamics and seize opportunities to expand its leadership in silicon carbide technologies.
Original – Wolfspeed
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Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies AG, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments.
“The Supervisory Board would like to thank Rutger Wijburg for his guiding work at Infineon. He has laid the foundation for growth, efficiency and resilience in the global manufacturing network. Major milestones under his leadership include the new module for high-volume production in Kulim and the Smart Power Fab in Dresden,” says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon.
“Alexander Gorski brings very broad experience and has done excellent work in a wide variety of management roles in recent years. He is therefore the ideal internal successor to further advance the important Operations area. We wish him all success in this endeavor,” Herbert Diess continued.
“I would like to personally thank Rutger Wijburg for his outstanding work. Thanks to him, our manufacturing landscape is great positioned. I am delighted that Alexander Gorski will take over seamlessly as such a competent successor,” says Jochen Hanebeck, CEO of Infineon.
“I am proud of what the Operations team has achieved over the past few years. Many thanks to all my colleagues for the excellent collaboration and the results we have achieved together. I wish my successor and colleague Alexander Gorski every success in his new role,” says Rutger Wijburg.
“Our powerful manufacturing creates significant value for our customers. I would like to thank the Supervisory Board and Management Board for their trust. I cannot imagine a more exciting role,” says Alexander Gorski.
Rutger Wijburg has been a member of the Management Board of Infineon Technologies AG and Chief Operations Officer since April 2022. In 2018, he joined the company as Managing Director of Infineon Technologies Dresden, bringing along more than 30 years of international experience in the semiconductor industry. A few years later, he took on the role of Head of Frontend, followed by the position of COO.
As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon’s manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens AG) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.
Original – Infineon Technologies
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As the demand for gallium nitride (GaN) semiconductors continues to grow, Infineon Technologies AG is poised to capitalize on this trend and solidify its position as a leading Integrated Device Manufacturer (IDM) in the GaN market. Today, the company announced that its scalable GaN manufacturing on 300-millimeter wafers is on track. With first samples available for customers as of the fourth quarter of 2025, Infineon is well-positioned to expand its customer base and reinforce its position as a leading GaN powerhouse.
As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation in electronic devices like smartphone chargers, industrial and humanoid robots or solar inverters.
“Our fully scaled-up 300-millimeter GaN manufacturing will allow us to deliver highest value to our customers even faster while moving towards cost parity for comparable silicon and GaN products,” said Johannes Schoiswohl, Head of GaN Business Line at Infineon. “Almost a year after the announcement of Infineon’s breakthrough in 300-millimeter GaN wafer technology, we are pleased that our transition process is well on track and that the industry has recognized the importance of Infineon’s GaN technology enabled by the strength of our IDM strategy.”
Infineon’s manufacturing strategy primarily relies on an IDM model – owning the entire semiconductor production process, from design to manufacturing and selling the final product. The company’s in-house manufacturing strategy is a key differentiator in the market providing several advantages such as high-quality, faster time-to-market as well as superior design and development flexibility. Infineon is committed to supporting its GaN customers and can scale capacity to meet their needs for reliable GaN power solutions.
Building on its technology leadership, Infineon has become the first semiconductor manufacturer to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure. Chip production on 300-millimeter wafers is technically more advanced and significantly more efficient compared to established 200-millimeter wafers, as the larger wafer diameter allows 2.3 times more chips to be produced per wafer. These increased capabilities combined with Infineon’s large team of GaN experts and the industry’s broadest IP portfolio are needed as GaN power semiconductors are being rapidly adopted in industrial, automotive, consumer, and computing & communication applications, such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.
Original – Infineon Technologies
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DENSO, a leading mobility supplier, recognized Infineon Technologies AG with a 2025 North America Business Partner Award in the Value Leader category at its annual North America Business Partner Convention (NABPC). During the event, DENSO brought together approximately 150 supplier representatives from across North America to recognize 15 exceptional business partners.
“We are honored to be recognized by DENSO as an exceptional business partner in 2024,” says Andrew Hunter, Regional Segment Head of Automotive Americas at Infineon. “Our mutual success in serving the rapidly evolving automotive market is built on a shared commitment to excellence, and we are proud of our continued work with one of the world’s leading providers of mobility solutions.”
Infineon provides a wide range of zero-defect products and system solutions to DENSO – including its AURIX™ and PSOC™ microcontrollers, OptiMOS™ and automotive MOSFETs, and radar sensors – to support functions such as engine and body control, systems electrification, safety, and autonomy.
DENSO’s Business Partner Awards are given to companies that demonstrate exceptional supplier partnership in such areas as quality, service, technology, value, and sustainability.
A key theme at this year’s NABPC was exploring how DENSO and suppliers can thrive together amid market uncertainties. Throughout the program, DENSO leaders stressed the need to maintain strong relationships, be adaptable and harness each other’s combined strengths to overcome potential difficulties and continue to support cleaner, safer mobility.
“With all the change currently facing our industry, we must remain flexible and resilient to deliver for our customers,” says Kim Buhl, Vice President of the North America Purchasing Group at DENSO. “We can only do this with the help of our suppliers. So, this year, as we congratulate those who have performed exceptionally in creating new value for DENSO, we also thank our entire supplier network. We call on each partner to continue to take on new challenges and opportunities, with us as we strive to contribute to a better world.
Original – Infineon Technologies
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Toshiba Group marks its 150th anniversary in July 2025.
Company journey began in 1875, when inventor Hisashige Tanaka established what would later become Tanaka Seizo-sho in Ginza, under a sign that read, “We welcome orders for inventions of all types of machinery.” In 1890, Dr. Ichisuke Fujioka founded Hakunetsu-sha with the belief that “electric light should be the light of the people,” and lit Japan’s first domestically produced incandescent lamp—laying the foundation for Japan’s electric industry. These two pioneering businesses grew and eventually merged in 1939 to form Tokyo Shibaura Electric Co., Ltd., the predecessor of today’s Toshiba Corporation.
Over the past 150 years, Toshiba Group has constantly risen to meet the challenges of each era—leveraging innovations in energy, infrastructure, devices, and digital domains to address pressing societal issues. From streetlights that illuminated Japan’s modernization, to home appliances that changed our daily life, word processors and PCs that transformed the way we work, and flash memory that laid the foundations for today’s data-driven society — Toshiba has remained at the forefront of change, advancing society through technology.
Today, Toshiba continues to confront global-scale challenges such as climate change and aging infrastructure, while pursuing next-generation innovations such as quantum technology and fusion power. At the heart of these efforts lives the spirit of the founders—their restless curiosity and passion.
This 150-year journey has only been made possible thanks to the warm support of all stakeholders. The company extends heartfelt gratitude to all who have accompanied it along the way. To commemorate this historic milestone and express appreciation, Toshiba has created a 150th anniversary logo. It symbolizes company’s legacy and aspirations for the future, and Toshiba’s determination to inspire stronger employee engagement as the company continues this journey together with them.
The circular shape representing the “0” in “150” embodies the Earth, reflecting the corporate philosophy— “Committed to People, Committed to the Future.”— and symbolizes aspirations for a better future—one Toshiba strives toward by addressing global social challenges. The Toshiba Group corporate
colors—Toshiba Red and Toshiba Blue—represent the essence of its identity: Toshiba Red represents the unwavering passion and confidence, while Toshiba Blue represents intelligence and modernity. The anniversary logo features a gradient blend of these two colors, symbolizing accomplishments over the past 150 years and ongoing commitment to shaping a new future through technological excellence.
Guided by the corporate philosophy, Toshiba Group remains committed to creating value and contributing to the enrichment of people’s lives and culture around the world.Original – Toshiba
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Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology.
Navitas’ GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices.
Powerchip’s capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. “200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields”, said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas.
Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.
Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with NVIDIA to support GaN and SiC technologies for 800V HVDC architectures for 1 MW IT racks and beyond. Enphase announced that its next-generation IQ9 would include Navitas’ 650 V bi-directional GaNFast ICs, and Changan Automobile announced its first commercial GaN-based OBC (on-board charger) using Navitas’ GaNSafe technology.
“We are proud to partner with Powerchip to advance high-volume 200 mm GaN-on-silicon production and look forward to driving continued innovation together in the years ahead”, said Gene Sheridan, CEO and co-founder of Navitas. “Through our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.”
“Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we’re thrilled to announce that product qualification is nearly complete – bringing us to the verge of mass production”, said Martin Chu, President at Powerchip. “Building on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.”
Original – Navitas Semiconductor
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Renesas Electronics Corporation introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters.
Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.
Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.
Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.
“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”
Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.
GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.
Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are available today, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT). More information about Renesas’ GaN solutions is available at: renesas.com/gan-fets.
Original – Renesas Electronics
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ROHM has released a 100V power MOSFET – RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.
As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.
The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.
Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.
ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.
Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.
Original – ROHM
