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onsemi announced plans to invest $8 million dollars with Stony Brook University to establish a wide band gap research center that will advance innovation in power semiconductors and foster the next generation of skilled professionals in this field. The investment is part of a broader $20 million strategic collaboration with Stony Brook University and Empire State Development aimed at positioning New York as a national hub for power semiconductor innovation.
The center aims to advance foundational research in silicon carbide and other wide band gap materials and device-enabling technologies—capabilities critical to improving energy efficiency in AI and electrification. Expected to be fully operational in early 2027, the facility will feature specialized laboratories and advanced instrumentation for materials development, device integration, and performance characterization.
“Advanced power semiconductors are at the core of enabling the widespread adoption of AI and electrification. This new center will play a key role in accelerating innovation in one of the most critical fields for these global megatrends,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi. “Aligned with Governor Hochul’s vision, and in strong partnership with Stony Brook and Empire State Development, we are building a pipeline of skilled talent who will drive the next wave of breakthroughs in power semiconductors and pave the way for our sustainable future.”
“The state-of-the-art research facility at Stony Brook University will be another step in our mission to reshore the chip industry, strengthen our national security, and cement New York’s status as the chips capital of the United States,” said New York State Governor Kathy Hochul. “By investing in cutting-edge technology and world-class talent, we’re building a stronger, more resilient future for Long Island, and New York.”
As part of the collaboration, Stony Brook University is developing a curriculum for an undergraduate minor and a graduate master’s degree and certificate in silicon carbide and wide bandgap semiconductors.
“This public-private partnership between onsemi, Stony Brook and Empire State Development has tremendous implications for economic development and national security,” said incoming Stony Brook University President Andrea Goldsmith. “As a technology entrepreneur and the founder of a fabless semiconductor startup, I am thrilled that Stony Brook is a key academic partner with onsemi, an industry leader in power semiconductors. This partnership places Stony Brook and New York State at the forefront of advancing power semiconductor technology while providing students hands-on research and practical opportunities as they prepare for leadership roles in high-skill, high-demand technology fields.”
Empire State Development is supporting the effort as part of New York’s broader strategy to revitalize domestic semiconductor capabilities and workforce development.
The new center will be led by Stony Brook professor Michael Dudley, a leading researcher in SiC growth and a member of the university’s Department of Materials Science & Chemical Engineering, in partnership with fellow professors Balaji Raghothamachar and Dilip Gersappe.
Original – onsemi
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iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling.
SuperQ is the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices. The architecture breaks through silicon’s fundamental switching and conduction barriers. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices.
The structure also improves resistance and power losses while maintaining the benefits of silicon, including its ruggedness, high-volume manufacturability, and proven reliability at 175°C junction rating.
The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6 mm PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability.
The 200 V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7 mm TOLL package. This has an RDSon of 6.1 mΩ, which is 10% lower than the current industry leader and 36% lower than the next best competitor. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages.
300 V and 400 V MOSFET platforms are coming soon—voltage classes underserved by today’s silicon technologies. iDEAL’s upcoming devices are designed to deliver dramatically lower resistance than existing solutions, opening new possibilities for efficiency and performance.
“For the past quarter-century, the industry has relied on Reduced Surface Field (RESURF) technologies like Superjunction, but these architectures’ performance has plateaued. To achieve the necessary gains in power delivery and efficiency, a new architecture is required and that is SuperQ,” said Mark Granahan, CEO and co-founder of iDEAL Semiconductor.
“The demand for higher performing power solutions has never been greater. SuperQ will enable emerging critical applications ranging from industrial automation, AI data center and the world’s electrification trends. Today iDEAL is announcing new levels of cost times performance for the designer’s toolbox at 150V – 400V that simply didn’t exist.”
This innovation is designed for MOSFETs, IGBTs, diodes, power ICs, and even future semiconductor materials, positioning SuperQ as a foundational technology for the next era of power electronics.
iDEAL’s silicon power devices are invented, engineered and fabricated in the United States. They are available in a wide range of industry-standard, drop-in compatible packages, including TO-220, ITO-220, TO-247, D2PAK-3L, D2PAK-7L, DPAK, TOLL, TOLT, and PDFN 5×6. The products are designed for a broad voltage and application spectrum.
Original – iDEAL Semiconductor
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SK keyfoundry, an 8-inch pure-play foundry in Korea, announced that it has successfully co-developed core technology and completed reliability testing of Direct RDL (Redistribution Layer) – a core semiconductor packaging technology based on 8-inch wafers – in collaboration with LB Semicon. This achievement marks a significant step forward in advancing next-generation semiconductor packaging technologies and strengthening the competitiveness of automotive semiconductor products.
RDL refers to metal wiring and insulating layers on top of semiconductor chips to enable electrical connections. It is primarily used in WLP (Wafer Level Packaging) and FOWLP (Fan-Out Wafer Level Packaging) processes to enhance connectivity between the chip and the substrate while minimizing signal interference. The newly co-developed Direct RDL by SK keyfoundry and LB Semicon supports power semiconductors with high current capacity, outperforming competitors. The technology achieves a metal wiring thickness of up to 15 μm and wiring density covering up to 70% of the chip area – making it suitable not only for mobile and industrial applications but also for automotive use. In particular, the solution meets the Auto Grade 1 classification under AEC-Q100 international automotive semiconductor quality standard, ensuring reliable operation in harsh environments with an operating temperature range of –40℃ to +125℃. Unlike competitors, this makes the technology fully viable for automotive products. In addition, by providing a Design Guide and Process Development Kit, SK keyfoundry can now offer a process solution tailored to customer needs, enabling smaller chip sizes, lower power consumption, and cost-effective packaging.
Semiconductor packaging and testing specialist LB Semicon stated that leveraging SK keyfoundry’s deep understanding of semiconductor processes and advanced manufacturing capabilities significantly shortened the development timeline. Through the integration of its own back-end processing technologies with SK keyfoundry’s foundry process expertise, the two companies successfully achieved optimized wafer-level Direct RDL formation, which is expected to greatly enhance production efficiency.
LB Semicon’s CEO Namseog Kim commented, “The joint development of direct RDL has served as an important milestone in strengthening the technological competitiveness of SK keyfoundry and LB Semicon.” He also added, “Through close collaboration between the two companies, we plan to establish a strong foothold in the next-generation semiconductor packaging market, built on high reliability.”
“The joint development with LB Semicon, the semiconductor packaging specialist, holds significant meaning as it demonstrates the successful integration of our company’s advanced and comprehensive manufacturing expertise into cutting-edge semiconductor packaging process development,” said Derek D. Lee, CEO of SK keyfoundry. “SK keyfoundry will continuously collaborate with LB Semicon, a leading company in semiconductor technology, to further evolve and position ourselves as a premier foundry with proven capabilities in delivering high-performance and high-reliability semiconductor solutions to the global market.”
Original – SK keyfoundry
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Texas Instruments received the prestigious “Operational Excellence” award at the annual Volkswagen Group Award 2025 in Wolfsburg, Germany. The recognition highlights TI’s resilient semiconductor supply strategies and forward-looking investments in production capabilities.
Today’s vehicles rely on thousands of semiconductors that power essential functions from engine control to advanced safety and infotainment. TI’s automotive-qualified semiconductors not only help automakers create safer vehicle systems, but provide the advanced capabilities and scalability needed to meet current and future design requirements.
With more than 30 models planned in 2025 across multiple regions, brands and platforms, Volkswagen Group highlighted the importance of a dependable supply of foundational semiconductors to design the next generation of safer, smarter vehicles. The company emphasized its close collaboration with strategic semiconductor partners like TI to ensure greater efficiency and reliability.
“TI’s technological strength and broad automotive portfolio, paired with our dependable, long-term supply is helping drive the next generation of vehicle innovation,” said Stefan Bruder, president of Texas Instruments Europe. “We are proud to work alongside Volkswagen Group to help create smarter, safer automotive systems with more advanced capabilities and features than ever before.”
Volkswagen Group leverages TI’s product, technology and system-level expertise to shape the transformation of the automotive industry. TI supplies Volkswagen Group with analog and embedded processing products for their next-generation automotive systems, including microcontrollers, processors, power management and interface devices and DLP® digital micromirror devices.
Original – Texas Instruments
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Power Integrations announced that Jennifer A. Lloyd, PhD will be the company’s next chief executive officer, succeeding Balu Balakrishnan, who has served as CEO since 2002. A former member of Power Integrations’ board of directors, Dr. Lloyd has been reappointed to the company’s board. Both appointments are effective July 21.
Since 1997, Dr. Lloyd has served in a succession of increasingly senior engineering and business roles at Analog Devices, Inc., a global semiconductor leader. She has led multiple $1B+ businesses spanning various technologies and end markets. Most recently, she was corporate vice president leading the company’s multi-market power business unit, responsible for product, strategy and P&L with leadership of a large global team. Prior roles included leadership of Analog’s precision franchise and its healthcare and consumer unit.
Dr. Lloyd holds doctoral, master’s and bachelor’s degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. Author of numerous technical papers and recipient of eight U.S. patents, she has also been active in the IEEE community, having served on the technical program committee for the International Solid-State Circuits Conference (ISSCC), the Custom Integrated Circuits Conference (CICC) and the VLSI Symposia (VLSI).
Mr. Balakrishnan plans to serve as executive chairman of Power Integrations’ board of directors for approximately six months to ensure a smooth leadership transition; he is expected to remain a non-executive member of the board thereafter. Bala Iyer will remain in the role of lead independent director.
Commented Mr. Balakrishnan: “We are thrilled that Jen Lloyd will be our next CEO. Throughout her distinguished career at Analog Devices, she has proven her ability to drive innovation, deliver new products to the market and achieve profitable growth. Her deep knowledge of power products and technologies and her familiarity with our company will allow her to hit the ground running. I am confident that she is the right leader to take Power Integrations to the next level.”
Dr. Lloyd added: “I am delighted to join Power Integrations as CEO. Power Integrations has a unique franchise in high-voltage semiconductors, with strong intellectual property spanning process, design and packaging, as well as strong system-level expertise and a brand that is respected across the power-electronics industry. The company has tremendous growth opportunities in markets like automotive, datacenter, renewable energy, grid modernization and many more. I am excited to lead the team into what I know will be a bright future.”
Original – Power Integrations
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Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behavior that delivers an outstanding figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as outstanding robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, thereby significantly reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.
This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175 °C. Designers can be further reassured by Nexperia’s reputation as a proven manufacturer of high-quality semiconductor products in a range of semiconductor technologies supported by a robust supply chain.
Original – Nexperia
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LATEST NEWS / SiC / WBGROHM Unveils Level 3 SPICE Models for SiC MOSFETs with 50% Faster, High-Accuracy Circuit Simulations
July 10, 2025
1 Min ReadROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.
Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.
The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
Original – ROHM
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Efficient Power Conversion Corporation (EPC) introduced EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 ARMS per phase from a 15 V to 55 V DC input in an ultra-compact circular form factor.
At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies—all on a single board that fits entirely within a 32 mm diameter footprint.
“The EPC91118 is a breakthrough for humanoid robotics, shrinking inverter size by 66% vs. silicon while eliminating electrolytic capacitors—thanks to GaN ICs and high-frequency operation,” said Alex Lidow, CEO and co-founder of EPC.
Key Features of the EPC91118 Evaluation Board:
- 15 ARMS per phase drive capability for 3-phase BLDC motors
- Integrated current and voltage sensing with high-resolution encoder for rotor position
- RS485 protocol support for real-time communication
- 100 kHz PWM frequency with 50 ns dead time
- Fully integrated board including controller, sensing, and power conversion
- MLCC-only DC link reduces size and enhances reliability
- Dimensions: 32 mm diameter inverter, 55 mm diameter external frame
The design was shaped to fit seamlessly inside humanoid joint motors, enabling low-profile, high-efficiency motion control. The high switching frequency enabled by GaN allows the use of compact multi-layer ceramic capacitors (MLCCs) rather than bulkier electrolytic capacitors, contributing to a lower profile and higher reliability design.
With a 66% smaller footprint compared to traditional silicon MOSFET implementations, the EPC91118 sets a new standard in motor drive integration for emerging robotics and drone markets.
For detailed technical specifications, schematics, and to request a sample, visit the EPC91118 product page.
Original – Efficient Power Conversion
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Vishay Intertechnology, Inc. introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high speed, hard-switching power designs.
For high voltage applications, the high creepage distance of the Vishay Semiconductors devices released today provides improved electrical isolation, while their SlimSMA HV package features a molding compound with a high CTI ≥ 600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95 mm compared to 2.3 mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2 nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high frequency applications. In addition, the devices have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30 V.
With a high operating temperature of +175 °C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generation and storage systems; industrial drives and tools; and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
RoHS-compliant and halogen-free, the diodes feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker test.
Original – Vishay Intertechnology
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Aehr Test Systems announced financial results for its fiscal 2025 fourth quarter and full year ended May 30, 2025.
Fiscal Fourth Quarter Financial Results:
- Net revenue was $14.1 million, compared to $16.6 million in the fourth quarter of fiscal 2024.
- GAAP net loss was $(2.9) million, or $(0.10) per diluted share, compared to GAAP net income of $23.9 million, or $0.81 per diluted share, which included a tax benefit of approximately $20.7 million, in the fourth quarter of fiscal 2024.
- Non-GAAP net loss, which excludes stock-based compensation, acquisition-related adjustments and restructuring charges, was $(0.2) million, or $(0.01) per diluted share, compared to non-GAAP net income of $24.7 million, or $0.84 per diluted share, which included the tax benefit and excluded stock-based compensation and acquisition-related costs, in the fourth quarter of fiscal 2024.
- Bookings were $11.1 million for the quarter.
- Backlog as of May 30, 2025 was $15.2 million. Effective backlog, including bookings since May 30, 2025, is $16.3 million.
- Total cash, cash equivalents and restricted cash as of May 30, 2025 was $26.5 million, compared to $31.4 million at February 28, 2025.
Fiscal Year Financial Results:
- Net revenue was $59.0 million, compared to $66.2 million in fiscal 2024.
- GAAP net loss was $(3.9) million, or $(0.13) per diluted share, compared to GAAP net income of $33.2 million, or $1.12 per diluted share, which included a tax benefit of approximately $20.7 million, in fiscal 2024.
- Non-GAAP net income was $4.6 million, or $0.15 per diluted share, which excludes stock-based compensation, acquisition-related adjustments and costs, restructuring charges and officer severance benefits, compared to non-GAAP net income of $35.8 million, or $1.21 per diluted share, which included the tax benefit and excluded stock-based compensation and acquisition-related costs, in fiscal 2024.
- Cash used in operating activities was $7.4 million for fiscal 2025.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“Fiscal 2025 was a transformative year for Aehr Test Systems, marked by significant progress on our strategic initiatives to expand our total addressable market, diversify our customer base, and enhance our product portfolio. We expanded into new markets for test and burn-in, including artificial intelligence processors for both wafer and package level, gallium nitride power semiconductors, data storage devices, and silicon photonics integrated circuits for optical chip-to-chip communication, unlocking substantial growth opportunities beyond our concentration in silicon carbide last fiscal year.
“A major milestone was the successful launch and adoption of our first production wafer level burn-in (WLBI) system specifically for artificial intelligence (AI) processors. This breakthrough validates the feasibility and cost benefits of WLBI testing for high-power AI devices, attracting strong interest from leading processor companies considering high-volume adoption.
“We are excited to report today that one of these companies has asked us to move forward with an evaluation for wafer level testing of one of their current high-volume processors. Based on their feedback, we believe that if this evaluation is successful, they intend to transition to high-volume production wafer-level testing, which would represent a significant opportunity for Aehr. We also expect to move to evaluation phases with additional AI companies during this fiscal year and believe we can capture a meaningful share of the total production burn-in market for AI processors with our FOX WLBI systems and proprietary WaferPak Contactors.
“We also expanded into packaged part qualification and production burn-in for AI processors this year through the acquisition of Incal Technology, enabling us to offer both wafer level and packaged part reliability burn-in and test solutions. Since the acquisition, we’ve achieved record shipments of packaged part burn-in (PPBI) systems and secured a major hyperscaler as our first production AI customer in this space. This customer is one of the premier large-scale data center hyperscalers that is developing its own AI processors and significantly expanding this capacity. They have indicated plans to ramp this device over the next year and have already begun discussing their next generation processors with us to ensure we can meet their production capacity needs. Aehr is the only company on the market that offers both a WLBI and a PPBI system for both qualification and production burn-in of AI processors, and we are very excited about our new AI product offerings and the expanded total addressable market they bring to us.
“In gallium nitride (GaN) power semiconductors, we secured the first production order from a leading automotive semiconductor supplier for our FOX-XP high-power multi-wafer production system with high voltage for volume production of GaN devices. We are in discussions and engagements with multiple other potential new GaN customers, highlighting the growing adoption of WLBI for GaN devices and signaling future opportunity as this market expands.
“GaN offers a wider range of applications than silicon carbide and is poised for significant growth in the next decade. While about 70% of silicon carbide’s largest market segment is for electric vehicles (EVs) and EV charging infrastructure, GaN is more diverse and not focused on a single application. With more uses, there are more potential customers and a larger market for GaN compared to silicon carbide.
“We are also making significant progress in the hard disk drive market. This past year, our lead customer began ordering multiple FOX-CP solutions for burn-in and stabilization of new devices in hard disk drives, representing follow-on orders to the first production order we received from them back in 2019. This customer is one of the top suppliers of data storage devices worldwide. In addition to the multiple systems we have in backlog, they have indicated they will be purchasing additional systems both in the short term and over time.
“We saw solid momentum in the silicon photonics market this year with the adoption of optical chip-to-chip communication and optical network switching. Several companies, including AMD, Nvidia, Intel, TSMC, and GlobalFoundries, have announced product roadmaps for devices that utilize optical chip-to-chip communication. We have several customers in this market, including the largest supplier of silicon photonics integrated circuits in the market. We have seen a significant number of new WaferPak designs from our installed base of systems for new designs that they use for qualification and development work on their FOX wafer level test and burn-in systems. We also now offer a new system with higher power 3500 watt per wafer configuration to meet the needs of new high-power wafers for optical I/O and chip-to-chip communication devices. This is also available as an upgrade to our FOX-NP systems for low-volume production and product qualification, as well as our FOX-XP nine wafer production systems. This system can also be configured with our new integrated WaferPak Auto aligner, which provides fully hands-free factory automation of silicon photonics integrated circuit wafers. We expect to see not only revenue from system upgrades and WaferPaks but also for incremental FOX-XP system and WaferPak orders to meet the capacity needs of the silicon photonics market this year. We remain very excited about the silicon photonics market and see this as a significant market opportunity for our products.
“While the silicon carbide market growth has slowed due to a slower growth in EVs, we remain confident in its long-term opportunity for Aehr and our leadership in WLBI solutions for this sector. EVs are still growing significantly worldwide, and we believe the silicon carbide market continues on a robust long-term growth trajectory. Demand for silicon carbide remains significantly driven by battery EVs, but silicon carbide devices are also gaining traction in other markets, including power infrastructure, solar, and various industrial applications. This quarter, we shipped our first high-voltage configuration of the FOX-XP, which can test 18 wafers simultaneously, extending the capabilities of our proven nine-wafer high-voltage configuration. We believe we are well-positioned in the silicon carbide market with our industry-leading solution for WLBI.
“We are also collaborating with a global leader in flash memory to demonstrate our FOX-XP platform for high-volume production wafer level test and burn-in of flash memory wafers, aiming to provide a competitive, cost-effective alternative to traditional testing methods. New technologies in NAND are driving new requirements for WLBI to address the manufacturing and negative yield implications of testing these NAND devices at the package or system level, and we believe our FOX WLBI solution is positioned to be a very competitive low-cost alternative to packaged part or alternative wafer level test and burn-in solutions for this market.
“Looking ahead, we are well-positioned to capitalize on strong demand across various semiconductor applications. The strategic investments we made this past year have built the infrastructure and capacity needed for significant growth, and we plan to boost our research and development efforts to add more capabilities and resources for our expanding customer base. We believe that nearly all the opportunities and market verticals we serve will experience order growth in fiscal 2026. The one exception may be silicon carbide, as customer forecasts for this market are back-half loaded, with stronger growth expected in our fiscal 2027.
“While we remain confident in Aehr’s long-term growth prospects, we continue to experience some timing-related delays in order placements due to tariff-related uncertainty, particularly in our first quarter. Accordingly, we are maintaining our cautious approach and are not reinstating specific guidance beyond what we have already stated, which is that we anticipate order growth across all our segments this fiscal year with the possible exception of silicon carbide. Overall, we are very optimistic about our growth opportunities in the diverse markets we serve and our ability to meet increasing demand.”
Original – Aehr Test Systems
