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iDEAL Semiconductor announced the signing of a global distribution agreement with Mouser Electronics. The agreement is for iDEAL’s power devices, which are based on the company’s novel, patented, state-of-the-art SuperQ technology.
SuperQ delivers significant efficiency and performance gains versus legacy Superjunction architectures, enabling power engineers to meet the demands of modern power systems while keeping the reliability, cost-effectiveness, and supply chain robustness of silicon.
The agreement follows news of the first SuperQ-based products entering mass production, with 150 V MOSFETS available immediately. These offer leading RDS(on) and figures of merit (FOM) including the industry’s lowest switching charge (QSW) and output capacitance energy (EOSS).
iDEAL’s initial devices target hard-switching, motor-control and synchronous-rectification applications including AI servers, USB power delivery, motor drives and AC/DC and DC/DC conversion.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor said: “Innovation in silicon power semiconductors has stalled for more than a decade, with much of the industry betting on alternative materials. SuperQ upends that trend – delivering unprecedented performance gains from a familiar, scalable, and cost-effective platform. This is the future of silicon, not the end.”
Kristin Schuetter, Senior Vice President of Products at Mouser Electronics said: “SuperQ represents a huge leap forward in what’s possible with silicon power devices. Mouser has an exceptional track record within this sector and this breakthrough will be extremely valuable to our power engineering customer base.”
Original – iDEAL Semiconductor
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onsemi announced an expanded collaboration with leading motion technology company Schaeffler through a new design win that leverages onsemi’s next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker’s cutting-edge plug-in hybrid electric vehicle (PHEV) platform.
onsemi’s EliteSiC technology offers significantly lower conduction losses and superior short-circuit robustness, enabling a compact, thermally efficient inverter design that enhances overall system performance. This silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class. These benefits allow Schaeffler to deliver an innovative traction inverter system that achieves measurable benefits to the end customer, including:
- Longer driving range, enabled by higher energy conversion efficiency
- Enhanced reliability, for consistent operation with lower maintenance
- Optimized form factor, allowing greater flexibility in vehicle design
“The traction inverter is at the heart of every electrified drivetrain, and onsemi’s EliteSiC solution plays a vital role in achieving the efficiency and performance targets that our customer demands,” said Christopher Breitsameter, Head of Business Division Controls at Schaeffler.
As automakers increasingly prioritize energy efficiency and performance, the industry is turning to more advanced hybrid architectures even in cost-sensitive EV platforms, a market traditionally dominated by insulated-gate bipolar transistors (IGBTs). onsemi’s role as an industry leader in silicon carbide positions it at the forefront of this transition, enabling Schaeffler to deliver an EV system that meets stringent performance and packaging requirements.
“As the exclusive silicon carbide supplier for this program, onsemi continues to strengthen its position as a trusted innovation partner for leading global automotive players,” said Simon Keeton, Group President, Power Solutions Group, onsemi. “Our industry-leading silicon carbide semiconductor technology delivers unmatched efficiency, thermal performance, and power density—key enablers for next-generation electric powertrain systems not only for battery electric vehicles, but also for plug-in hybrid platforms.”
This new milestone builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies’ multi-year collaboration and reinforcing their shared commitment to delivering high-efficiency electric mobility solutions.
Original – onsemi
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STMicroelectronics N.V. reported U.S. GAAP financial results for the second quarter ended June 28, 2025.
ST reported second quarter net revenues of $2.77 billion, gross margin of 33.5%, operating loss of $133 million, and net loss of $97 million or -$0.11 diluted earnings per share (non-U.S. GAAP operating income of $57 million, and non-U.S. GAAP1 net income of $57 million or $0.06 diluted earnings per share).
Jean-Marc Chery, ST President & CEO, commented:
- “Q2 net revenues came above the mid-point of our business outlook range, driven by higher revenues in Personal Electronics and Industrial, while Automotive was slightly below expectations. Gross margin was in line with the mid-point of our business outlook range.”
- “On a year-over-year basis, Q2 net revenues decreased 14.4%, non-U.S. GAAP operating margin decreased to 2.1% from 11.6% and non-U.S. GAAP1 net income decreased to $57 million from $353 million.”
- “First half net revenues decreased 21.1% year-over-year, with a decrease in all reportable segments. Non-U.S. GAAP1 operating margin was 1.3% and non-U.S. GAAP1 net income was $120 million.”
- “In the second quarter, our book-to-bill ratio remained above one for Industrial, while Automotive was below parity. Bookings continued to increase sequentially.”
- “Our third quarter business outlook, at the mid-point, is for net revenues of $3.17 billion, decreasing year-over-year by 2.5% and increasing sequentially by 14.6%; gross margin is expected to be about 33.5%; including about 340 basis points of unused capacity charges. On a sequential basis, our Q3 gross margin will be negatively impacted by about 140 basis points, mainly from currency effect and, to a lesser extent, the start of non-recurring cost related to our manufacturing reshaping program.”
- “While we expect Q3 revenues to show a solid sequential growth enabling a continued year-over-year improvement, we are still operating amid an uncertain macroeconomic environment. Given these external factors, our priorities remain supporting our customers, accelerating new product introductions, and executing our company-wide program to reshape our manufacturing footprint and resize our global cost base.”
Original – STMicroelectronics
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Texas Instruments Incorporated reported second quarter revenue of $4.45 billion, net income of $1.30 billion and earnings per share of $1.41. Earnings per share included a 2-cent benefit that was not in the company’s original guidance.
Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:
- “Revenue increased 9% sequentially, led by continued broad recovery in industrial, and 16% from the same quarter a year ago.
- “Our cash flow from operations of $6.4 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.8 billion.
- “Over the past 12 months we invested $3.9 billion in R&D and SG&A, invested $4.9 billion in capital expenditures and returned $6.7 billion to owners.
- “TI’s third quarter outlook is for revenue in the range of $4.45 billion to $4.80 billion and earnings per share between $1.36 and $1.60, which does not include changes related to recently enacted U.S. tax legislation.”
Original – Texas Instruments
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Toshiba Electronics Europe GmbH announced the launch of two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5. These latest offerings adopt Toshiba’s innovative SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations.
The new SOP Advance(E) package marks a substantial improvement over Toshiba’s existing SOP Advance(N) package, reducing package resistance by approximately 65% and thermal resistance by approximately 15%. These package enhancements directly translate into superior device performance.
The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (RDS(ON)) of approximately 21% and channel-case thermal resistance (Rth(ch-c)) of approximately 15% when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150V TPM7R10CQ5 achieves approximately 21% lower RDS(ON) and approximately 15% lower Rth(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification.
The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately achieves lower loss and higher efficiency in critical applications such as switched-mode power supplies for industrial equipment, including those powering data centres and communication base stations.
The TPM1R908QM features a drain-source voltage (VDSS) of 80V, a drain current (ID) of 238A (Tc=25°C), and a maximum RDS(ON) of 1.9mΩ (VGS=10V). The TPM7R10CQ5 offers a VDSS of 150V, an ID of 120A (Tc=25°C), and a maximum RDS(ON) of 7.1mΩ (VGS=10V). Both products have a channel temperature (Tch) of 175°C and a maximum Rth(ch-c) of 0.6°C/W (Tc=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.
To further support circuit design for switched-mode power supplies, Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.
Toshiba is committed to expanding its portfolio of power MOSFETs to facilitate more efficient power supplies, thereby aiding in the reduction of overall equipment power consumption.
Original – Toshiba
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Soitec announced unaudited consolidated revenue of 92 million Euros for the first quarter of FY’26 (ended on June 29th, 2025), down 24% on a reported basis compared with 121 million Euros achieved in the first quarter of FY’25. This reflects a 16% decline on an organic basis, a negative currency impact of 5% and a negative scope effect of 3% related to the divestment of Dolphin Design’s businesses.
Pierre Barnabé, Soitec’s CEO, commented: “Q1’26 revenue was slightly better than the guidance, down 16% year-on-year on an organic basis. This includes the phase-out of Imager-SOI. Artificial Intelligence continues to support strong growth in Edge & Cloud AI division, with traction both at the edge and in the cloud accelerating adoption of FD-SOI for Edge AI and Photonics-SOI for data centers. Conversely, the correction of RF-SOI inventories among our direct customers, and the ongoing weakness in the Automotive market continued to impact our revenue.
Looking ahead, we expect Q2’26 revenue to grow around 50% versus Q1’26, on an organic basis. This reflects ongoing RF-SOI inventory correction in Mobile Communications, continued weakness in Automotive & Industrial, and strong growth in Edge & Cloud AI.
In an uncertain and volatile environment, we remain focused on the factors within our control to prepare Soitec for the future. We are broadening our end-market exposure and customer base to diversify the company’s foundations. In parallel, we are accelerating the expansion of our product portfolio – across both SOI and compound semiconductors – to serve a wider range of applications. At the same time, we are building robust ecosystems that support the adoption of our products, with the ambition of establishing them as new industry standards.”
Mobile Communications
Mobile Communications revenue reached 43 million Euros in Q1’26, down 7% year-on-year on an organic basis.
After a strong seasonal tailwind in Q4’25, further correction was expected in RF-SOI customer inventories. As a result, sales of RF-SOI wafers decreased to a low level in Q1’26, below Q1’25. This mostly reflects a significant year-on-year decrease in 200-mm RF-SOI volumes sold. Sales of 300-mm RF-SOI wafers were higher than in Q1’25, driven by higher volumes, despite a slightly negative price / mix effect.
Sales of POI (Piezoelectric-on-Insulator) wafers dedicated to RF filters were stable year-on-year, reflecting ongoing growth with key US customers and a temporary slowdown in Asia. POI is becoming the reference substrate for advanced Surface Acoustic Wave (SAW) filters, increasingly adopted by leading fabless globally.
Sales of FD-SOI wafers, the only solution for fully integrated 5G mmWave system-on-chip, were significantly higher than in Q1’25. FD-SOI adoption is progressing with first design wins for Wi-Fi 7 SoCs, for premium Android smartphones.
Automotive & Industrial
In a persistently complicated automotive market, Automotive & Industrial revenue reached 5 million Euros in Q1’26, down 81% year-on-year on an organic basis.
As expected, the Power-SOI inventory replenishment that took place at customer level in Q4’25, came at the expense of volumes in Q1’26, and will continue to impact Q2’26. Meanwhile, Soitec is accelerating the transition from 200-mm to 300-mm Power-SOI to address growing demand for Battery Management Systems.
Automotive FD-SOI wafer sales were negligible in Q1’26, although the build-up of a solid ecosystem is supporting the strengthening of its adoption for analog/digital systems such as radars, microcontrollers and wireless connectivity.
Regarding SmartSiCTM, the slower growth of the electric vehicle market combined with the longer qualification cycles confirms the delay in the production ramp-up, as already communicated.
Edge & Cloud AI
Edge & Cloud AI revenue reached 44 million Euros in Q1’26, up 13% on an organic basis compared to Q1’25 despite the discontinuation of the first generation of Imager-SOI wafers for 3D imaging applications, which recorded 25 million Dollars in revenue in Q1’25. On a reported basis, Edge & Cloud AI revenue went down 4% due to the scope effect of the divestment of Dolphin Design’s businesses combined with a negative currency impact.
Soitec delivered another strong performance in Photonics-SOI in Q1’26, with sales significantly above Q1’25 levels. As AI computing power expands, driving demand for faster and more efficient data centers, Photonics-SOI stands out as the optimal solution for high-speed, high-bandwidth optical links, whether for pluggable transceivers or Co-Packaged Optics (CPOs). Soitec is capitalizing on strong Cloud infrastructure investments from Big Tech and AI players and is accelerating its Photonics-SOI roadmap with AI leaders.
FD-SOI sales were also above Q1’25 levels. Thanks to its benefits in power efficiency, performance, thermal management, and reliability, FD-SOI is a key enabler of AI-driven IoT applications across consumer, healthcare, and industrial markets.
Q2’26 outlook
Q2’26 revenue is expected to grow around 50% versus Q1’26, on an organic basis. The impact from the phasing out of Imager-SOI will be less pronounced than in Q1’26, as Imager-SOI revenue amounted to approximately 7 million Dollars in Q2’25.
Excluding Imager-SOI, Edge & Cloud AI is expected to maintain solid momentum and should be slightly up vs. Q1’26. Mobile Communications revenue will remain low, despite nearly doubling from Q1’26, as customers continue to work through excess RF-SOI inventory. As in Q1’26, Automotive & Industrial revenue in Q2’26 is expected to decline sharply versus Q2’25.
Projected FY’26 Capex cash-out is confirmed around 150 million Euros, down from 230 million Euros in FY’25.
Original – Soitec
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PANJIT International Inc. announced the inauguration of the newest manufacturing facility in Cabuyao, Laguna, Philippines. This strategic expansion marks a significant milestone in global growth journey and reaffirms commitment to advancing the semiconductor industry worldwide.
Operated by Automated Technology (Philippines) Inc. (ATEC), the new production line significantly enhances PANJIT’s backend manufacturing capabilities. It boosts operational flexibility, strengthens supply chain resilience, and allows to provide more localized support to global customers.
This expansion into the Philippines is a crucial step forward for PANJIT. It enables to increase manufacturing efficiency, improve delivery reliability, and better serve the rising demand across key sectors—including automotive, industrial, and consumer electronics.
As the company continues to grow globally, PANJIT remains steadfast in its mission to provide cutting-edge semiconductor solutions, uphold rigorous quality standards, and contribute to the technological progress of the industry worldwide.
Original – PANJIT International
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Toshiba Electronic Devices & Storage Corporation will soon relocate its registered head office from Shibaura, Minato-ku, Tokyo to Komukai-toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa. The registration of the head office relocation is planned to take effect as of August 1st, 2025.
This move is done in conjunction with the parent company, Toshiba Corporation, which is relocating its headquarters functions and registered head office from Shibaura, Minato-ku, Tokyo to Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa.
Toshiba Electronic Devices & Storage Corporation has already transferred the head office functions to Komukai-toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa. By consolidating Toshiba Corporation’s top management and corporate staff departments in Kawasaki, the company will strengthen collaboration within the Toshiba Group and further accelerate decision-making and customer responsiveness.
Planned Date of Registered Head Office Relocation: August 1, 2025
Address After Relocation:
1 Komukai-toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa 212-8583, JapanOriginal – Toshiba
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Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices.
In his inaugural lecture, titled “Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future,” Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon.
The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.
Opening remarks at the event were delivered by TU Hamburg President Prof. Dr. Andreas Timm-Giel. Representing the Hamburg Senate, State Secretary for Science Dr. Eva Gümbel emphasized the broader impact of the new chair: “This endowed professorship addresses one of the most important enabling technologies of our time. Power electronics are vital to sustainable energy supply and industrial innovation. With Prof. Kapels, TU Hamburg gains a leading researcher who will shape both science and education in this strategic field.”
Ansgar Thorns, Vice president R&D at Nexperia Germany, highlighted the professorship’s significance for the company and the broader innovation ecosystem: “This professorship is an investment in future technologies, in local talent, and in Hamburg as a center for semiconductor excellence. Fostering innovation and developing the next generation of engineers go hand in hand – and both are critical to strengthening our deep-tech ecosystem.”
The new chair is part of Nexperia’s long-term innovation strategy. The company has a manufacturing legacy in Hamburg that dates back over a century to the founding of the Valvo radio tube factory in 1924 – a pioneering site in German electronics history. Today, Nexperia’s Hamburg facility produces approximately 25% of the world’s small-signal diodes and transistors. Since 2017, the site has expanded from 950 to around 1,600 employees and undergone significant technological modernization, including a strategic expansion into power semiconductors.
“This is Nexperia’s first endowed professorship and a milestone for our engagement with research and education,” Thorns added. “We’re proud to partner with TU Hamburg – a strong academic institution – to shape the future of energy-efficient semiconductor technologies in Germany and beyond.”
Beginning in the winter semester 2025/26, Prof. Kapels will teach “Electrical Engineering I” and “Wide Bandgap Semiconductors”, helping to equip a new generation of engineers with the expertise needed to support the global shift toward electrification and decarbonization.
Original – Nexperia
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The growth of artificial intelligence (AI) and the electrification of everything are driving an ever-increasing demand for higher levels of power efficiency and reliability. Microchip Technology announced that under a new partnership agreement with Delta Electronics, Inc., a global leader in power management and smart green solutions, the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future.
“SiC is increasingly important in sustainable power solutions because of its wide-bandgap properties, which enable smaller and more efficient designs for high-voltage, high-power applications at a lower system cost,” said Clayton Pillion, vice president of Microchip’s high-power solutions business unit. “We look forward to forging an impactful path with Delta Electronics on innovating SiC solutions to meet the rising demand of the electrification of everything.”
As a global leader in power management, Delta advances its core competence in high-efficiency power electronics and continuously evaluates and leverages next-generation technologies to enhance the energy efficiency of its products and solutions. Delta intends to leverage Microchip’s abundant experience and advanced technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure.
This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support to include technical training, insight into R&D activities and early access to product samples.
Original – Microchip Technology
