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Navitas Semiconductor announced that Xiaomi’s next-generation 90W GaN charger will be powered by Navitas’ GaNSense Control ICs.
As the world’s smallest 90 W charger, this ultra-compact, high-power-density form-factor measures just 34 × 45 × 34 mm and weighs only 65 grams—approximately half the size and a third the weight of typical GaN chargers.
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines 4th generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters, and auxiliary power designs.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
Original – Navitas Semiconductor
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iDEAL Semiconductor announced it will partner with Power and RF specialist, Richardson Electronics.
Under the agreement, iDEAL will gain access to Richardson Electronics’ design teams and sales specialists to expand the reach of its ultra-efficient, high-performance power MOSFETs, which are based on the company’s novel, patented, state-of-the-art SuperQ technology.
SuperQ is the first significant advance in silicon technology this century. It delivers up to 5.7x lower resistance and up to 2.1x lower switching loss than leading competitors. This enables power engineers to meet the demands of modern power systems while keeping the reliability, cost-effectiveness, and supply chain robustness of silicon.
The agreement follows iDEAL’s launch of its first SuperQ-based products, a series of 150 V MOSFETS, and the sampling of a family of 200 V MOSFETs. These offer leading figures of merit (FOM) including the industry’s lowest resistance, switching charge (QSW) and output capacitance energy (EOSS) and are available immediately.
iDEAL’s initial devices target hard-switching, motor-control and synchronous-rectification applications including AI servers, USB power delivery, motor drives and AC/DC and DC/DC conversion.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor said: “Innovation in silicon power semiconductors has slowed, with much of the industry shifting focus to alternative materials. SuperQ proves there’s still room to push silicon far beyond what was thought possible. We’re thrilled to partner with Richardson Electronics – their deep expertise in power electronics makes them an ideal collaborator to bring SuperQ’s disruptive benefits to more customers worldwide.”
Greg Peloquin, Executive Vice President of Power & Microwave Technologies of Richardson Electronics said: “The SuperQ structure marks a significant breakthrough in the power sector, and we’re delighted to be representing iDEAL. As a specialist in power, Richardson’s team is uniquely positioned to help power engineers meet the ever-more-stringent demands being placed on them, and SuperQ will be a key component in solving their challenges.”
Original – iDEAL Semiconductor
