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Navitas Semiconductor announced that Xiaomi’s next-generation 90W GaN charger will be powered by Navitas’ GaNSense Control ICs.
As the world’s smallest 90 W charger, this ultra-compact, high-power-density form-factor measures just 34 × 45 × 34 mm and weighs only 65 grams—approximately half the size and a third the weight of typical GaN chargers.
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines 4th generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters, and auxiliary power designs.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi’s 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
Original – Navitas Semiconductor
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iDEAL Semiconductor announced it will partner with Power and RF specialist, Richardson Electronics.
Under the agreement, iDEAL will gain access to Richardson Electronics’ design teams and sales specialists to expand the reach of its ultra-efficient, high-performance power MOSFETs, which are based on the company’s novel, patented, state-of-the-art SuperQ technology.
SuperQ is the first significant advance in silicon technology this century. It delivers up to 5.7x lower resistance and up to 2.1x lower switching loss than leading competitors. This enables power engineers to meet the demands of modern power systems while keeping the reliability, cost-effectiveness, and supply chain robustness of silicon.
The agreement follows iDEAL’s launch of its first SuperQ-based products, a series of 150 V MOSFETS, and the sampling of a family of 200 V MOSFETs. These offer leading figures of merit (FOM) including the industry’s lowest resistance, switching charge (QSW) and output capacitance energy (EOSS) and are available immediately.
iDEAL’s initial devices target hard-switching, motor-control and synchronous-rectification applications including AI servers, USB power delivery, motor drives and AC/DC and DC/DC conversion.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor said: “Innovation in silicon power semiconductors has slowed, with much of the industry shifting focus to alternative materials. SuperQ proves there’s still room to push silicon far beyond what was thought possible. We’re thrilled to partner with Richardson Electronics – their deep expertise in power electronics makes them an ideal collaborator to bring SuperQ’s disruptive benefits to more customers worldwide.”
Greg Peloquin, Executive Vice President of Power & Microwave Technologies of Richardson Electronics said: “The SuperQ structure marks a significant breakthrough in the power sector, and we’re delighted to be representing iDEAL. As a specialist in power, Richardson’s team is uniquely positioned to help power engineers meet the ever-more-stringent demands being placed on them, and SuperQ will be a key component in solving their challenges.”
Original – iDEAL Semiconductor
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Innoscience and United Automotive Electronics (UAES) announced the establishment of a joint laboratory to develop advanced power electronics systems for new energy vehicles using the advantages of GaN technology in size, weight, and efficiency. The two parties held a joint laboratory unveiling ceremony at UAES (Suzhou R&D Center).
Due to the advantages of GaN technology over legacy silicon-based power devices, GaN power devices are widely used in electric vehicle, renewable energy systems, and AI data center power systems. Compared with traditional silicon, GaN-based converters and inverters can reduce power losses by up to 10 times, significantly improving efficiency and power density, and reducing system BOM costs, thus achieving smaller size and lighter weight, and reducing carbon dioxide emissions.
Dr. Xiaolu Guo, Deputy General Manager of United Electronics, said: “We are pleased to work with Innoscience, which has been committed to the mass production of GaN technology since 2015. This cooperation will strengthen the cooperation between the two parties, including senior management. We have developed a high power density on-board charger based on GaN. We look forward to continuing to strengthen our cooperation through this laboratory, boosting the innovation of GaN OBC solution.”
Dr. Jingang Wu, CEO of Innoscience, said: “We are pleased to establish a joint laboratory with UAES, a global leader in automotive electronics and a technology leader in wide bandgap power device applications. Innoscience has developed the industry’s highest performance and highest reliability GaN process, covering a voltage range from 15V to 1200V, and has the world’s largest 8-inch production capacity. We look forward to working with UAES to fully leverage our strengths in GaN and contribute to GaN-based electric vehicle technology innovation.”
Due to its material properties, GaN can achieve new standards of system performance in power conversion, significantly reducing losses, thereby improving efficiency, reducing volume and weight, and thus reducing system costs. The application range of GaN power devices has far exceeded consumer electronics, and has been mass produced in data centers, industrial and photovoltaic equipment, and has been used in electric vehicle power electronics systems.
Original – Innoscience Technology
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SwissSEM introduced latest innovation – i23 Series 900A/1200V Half-Bridge IGBT Modules. Engineered for high efficiency and reliability, these modules are ideal for demanding applications in renewable energy, industrial automation, and electric mobility. The i23 Series minimizes saturation voltage and switching losses—delivering higher performance where it matters most.
Key Technical Highlights
- Ultra-low VCE(sat): Just 1.55V at 900A (25°C)
- Optimized FRD: 0.25V lower VF for energy storage PCS
- d23 Diode: Soft recovery design for safe reverse recovery—perfect for 3-level energy storage
- Advanced thermal management: High-performance insulated substrates for superior heat dissipation
- Industry-standard packaging: With low internal impedance for high current density
- Rated up to 175°C junction temperature for long-term durability
Why Choose i23
- Proprietary IGBT and diode chips developed in-house
- Custom packaging for high-current (900A) modules with copper wire bonding and large area power terminals
- Tight parameter distribution supports direct parallel operation—no matching needed
- Built for harsh conditions: High resistance to moisture and salt spray environments
- Backed by full manufacturing, quality, and supply-chain support
Application Areas
- 1500V centralized photovoltaic (PV) inverters
- Centralized energy storage converters
- Electric drive systems for commercial vehicle drives
- Variable frequency drives (VFDs) and inverter-based welders
- UPS systems and auxiliary traction power supplies
- Frequency converters
Original – SwissSEM
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Infineon Technologies AG has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package. The new devices deliver optimized thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers.
The new CoolSiC 1200 V G2 technology offers significant improvements over the previous generation, enabling up to 25 percent lower switching losses for equivalent RDS(on) devices, thereby increasing system efficiency by up to 0.1 percent. Utilizing Infineon’s improved .XT die attach interconnection technology, the G2 devices achieve more than 15 percent lower thermal resistance and an 11 percent reduction in MOSFET temperature compared to G1 family products.
The outstanding RDS(on) values, ranging from 4 mΩ to 78 mΩ, along with a broad product portfolio enable designers the flexibility to optimize system performance for their target applications. Furthermore, the new technology supports overload operation up to a junction temperature (Tvj) of 200°C and features high robustness against parasitic turn-on, ensuring reliable operation under dynamic and demanding conditions.
The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon’s broader X-DPAK top-side cooling platform. With a standardized package height of 2.3 mm across all TSC variants – including Q-DPAK and TOLT – the platform offers design flexibility and enables customers to scale and combine different products under a single heatsink assembly. This design flexibility simplifies advanced power system development, making it easier for customers to customize and scale their solutions.
The Q-DPAK package enhances thermal performance by enabling direct heat dissipation from the device’s top surface to the heatsink. This direct thermal path delivers significantly better heat transfer efficiency compared to traditional bottom-side cooled packages, enabling more compact designs. Additionally, the Q-DPAK package layout design allows for minimized parasitic inductance, which is critical for higher switching speeds. This enhances system efficiency and reduces voltage overshoot risk. The small footprint of the package supports compact system designs, while its compatibility with automated assembly processes simplifies manufacturing, ensuring cost-efficiency and scalability.
The CoolSiC MOSFET 1200 V G2 in Q-DPAK single switch and dual half-bridge package variants are available now. Further information is available at www.infineon.com/coolsic-mosfet-discretes.
Original – Infineon Technologies
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onsemi announced its working with NVIDIA to support the transition to 800 Volts Direct Current (VDC) power architectures, a transformative solution that is driving significant gains in efficiency, density, and sustainability for next-generation AI data centers.
At the core of this shift is new power distribution system, which must distribute a massive amount of power with minimal losses during each voltage conversion. onsemi’s intelligent power portfolio plays a critical role in enabling the next generation of AI data centers by delivering high-efficiency, high-density power conversion across every stage of the power journey—from high-voltage AC/DC conversion at the substation to precise voltage regulation at the processor level.
Leveraging decades of innovation in both silicon and silicon carbide (SiC) technologies, onsemi provides industry-leading solutions for solid state transformers, power supply units, 800 VDC distribution, and core power delivery, all integrated with intelligent monitoring and control. This breadth and depth of capability make onsemi one of the few companies able to meet the demanding power requirements of modern AI infrastructure with scalable, physically realizable designs.
Original – onsemi
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The business performance of Siltronic AG in the first six months of the year was in line with communicated expectations. In a market environment that remains challenging for the wafer industry, sales in H1 2025 amounted to EUR 674.8 million, slightly below the previous year’s level (H1 2024: EUR 694.8 million). Sales in Q2 2025 totaled EUR 329.1 million, down by 4.8 percent compared to the previous quarter (Q1 2025: EUR 345.8 million).
“The visible growth in end markets has so far not led to a normalization of inventory levels at chip manufacturers. As a result, there is still no noticeable recovery in demand at Siltronic. However, in order to participate sustainably and profitably in the medium-term demand growth expected in the future, we are consistently implementing key strategic initiatives. In the first six months, we completed important customer qualifications for our new fab in Singapore and finalized the last steps in the cessation of wafer production for small diameters up to 150 mm at the Burghausen site,” said Dr. Michael Heckmeier, CEO of Siltronic AG.
Business development in Q2 2025 influenced by increased wafer area sold and exchange rate effects
In Q2 2025, Siltronic AG generated sales of EUR 329.1 million. This corresponds to a decline of EUR 16.7 million compared to EUR 345.8 million in Q1 2025. The increase in wafer area sold could not fully offset the negative impact by exchange rate effects, and to a lesser extent, by price effects.
On the cost side, both cost of sales (Q2 2025: EUR 268.9 million, Q1 2025: EUR 290.9 million) and selling -, general administration -, as well as research and development expenses (Q2 2025: EUR 34.3 million, Q1 2025: EUR 38.3 million) declined noticeably quarter-over-quarter. This positive development was mainly driven by improved fixed cost dilution due to the increased wafer area sold and lower write-downs on spare parts.
The loss in other exchange rate effects amounted to EUR 3.2 million in Q2 2025, compared to EUR 2.5 million in Q1 2025. While in Q1 the stronger average US dollar against the euro mainly led to a loss from currency hedging transactions, in Q2 the key factor was the reporting date valuation of receivables – with the US dollar significantly weaker at 1.17 per euro (compared to 1.08 on March 31, 2025, and 1.04 on December 31, 2024).
As a result, EBITDA in Q2 2025 amounted to EUR 86.4 million, showing a noticeable increase compared to the previous quarter (Q1 2025: EUR 78.3 million), despite the decline in sales. Accordingly, the EBITDA margin rose to 26.3 percent (Q1 2025: 22.6 percent). This improvement was also reflected in EBIT, which increased to EUR 23.7 million in Q2 2025 (Q1 2025: EUR 14.9 million) with depreciation remaining nearly unchanged. Net profit rose from EUR 4.3 million in Q1 2025 to EUR 14.6 million in Q2. Earnings per share increased from EUR 0.08 in Q1 2025 to EUR 0.38 in Q2.
H1 2025 impacted by higher wafer area sold and negative price and product mix effects
In H1 2025, sales totaled EUR 674.8 million (H1 2024: EUR 694.8 million). The clear increase in wafer area sold could not offset the negative price and product mix effects. Exchange rate developments had no material impact on sales compared to the previous year’s period.
Cost of sales rose slightly from EUR 554.1 million in H1 2024 to EUR 559.8 million in H1 2025. The improved fix cost dilution resulting from the increased wafer area sold and lower write-downs on spare parts in inventories were offset by higher depreciation due to investments.
Exchange rate effects, reported under other operating income and expenses, resulted in a net loss of EUR 5.7 million, compared to a gain of EUR 4.7 million in H1 2024 and significantly reduced year-over-year profitability. While the previous-year period still benefited from a gain from currency hedging transactions, Q2 was particularly impacted by the reporting date valuation of the EUR/USD exchange rate. EBITDA fell to EUR 164.6 million (H1 2024: EUR 181.4 million), and reached a margin of 24.4 percent in H1 2025 (H1 2024: 26.1 percent).
Net profit for the period decreased from EUR 50.1 million in H1 2024 to EUR 18.8 million in H1 2025. In addition to the decline driven by the operating performance, a lower financial result due to investment-related effects also added to the reduction. Earnings per share amounted to EUR 0.46 in H1 2025 after EUR 1.59 in H1 2024.
Net assets and financial position affected by high investments
In H1 2025, capex including intangible assets decreased significantly to EUR 250.1 million, compared to EUR 411.2 million in the previous year’s period. As expected, both free cash flow (H1 2025: EUR -169.5 million; H1 2024: EUR -239.8 million) and net cash flow (H1 2025: EUR -157.0 million; H1 2024: EUR -252.8 million) clearly improved compared to the previous year’s period. However, the continued high level of investment, particularly in connection with the new fab in Singapore, once again resulted in both figures remaining negative.
Nonetheless, Siltronic’s balance sheet quality remained robust as of June 30, 2025, reflected in a stable equity ratio of 43.3 percent (December 31, 2024: 43.6 percent). The net financial debt increased to EUR 902.8 million. Net payments for capex including intangible assets totaling EUR 250.1 million were offset by cash flows from operating activities of EUR 80.6 million.
Guidance for 2025 with adjusted exchange rate assumptions
The Executive Board of Siltronic AG confirms the guidance for the full year 2025 with a constant exchange rate (original assumption: 1.08 EUR/USD). However, based on an adjusted exchange rate of 1.15 EUR/USD for H2 2025, the guidance has been revised. Adjusted for the new exchange rate assumption, sales for full year 2025 are now expected to be in the mid-single-digit percentage range below the previous year (previously: in the region of the previous year). For Q3 2025, sales are expected to be below the level of Q2. This development is mainly due to shifts in delivery volumes within 2025, most of which have been postponed to Q4. The EBITDA margin for the full year is still expected in the range of 21 to 25 percent.
Due to improved insights gained over the course of the year and a weaker Singapore dollar, depreciation is now expected to be between EUR 340 million and EUR 400 million (previously: EUR 380 million to EUR 440 million). The guidance for EBIT (significant decline), capital expenditures including intangible assets (EUR 350 million to EUR 400 million), and net cash flow (significant improvement, but still negative) remains unchanged.
Original – Siltronic
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Vishay Intertechnology, Inc. announced that it has been honored by DENSO, a leading mobility supplier, with a 2025 North America Business Partner Award in the Value Leader category.
DENSO’s Business Partner Awards are given to companies that demonstrate exceptional supplier partnership in such areas as quality, service, technology, value, and sustainability. Vishay earned a Value Leader Award for consistently proposing innovative components that enhance DENSO’s designs, while providing exceptional supplier support.
“With all the change currently facing our industry, we must remain flexible and resilient to deliver for our customers,” said Kim Buhl, vice president of the North America Purchasing Group at DENSO. “We can only do this with the help of our suppliers. So, this year, as we congratulate those who have performed exceptionally in creating new value for DENSO, we also thank our entire supplier network. We call on each partner to continue to take on new challenges, and opportunities, with us as we strive to contribute to a better world.”
“It’s a tremendous honor to receive the 2025 Value Leader Award from DENSO — a recognition that underscores the strength of our customer-first collaboration,” said Bill Boldt, senior vice president of sales and marketing, Americas, at Vishay. “This award reflects our growth-driven commitment to innovation and to building strategic partnerships that help customers succeed, even amid today’s market uncertainties. We’re proud to support DENSO’s mission to advance cleaner, safer mobility and are ready to meet the growing demand for our components.”
Original – Vishay Intertechnology
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At its meeting on July 25, the Supervisory Board of Siltronic AG extended the Executive Board contract of CEO Dr. Michael Heckmeier, originally set to expire in May 2026, by another five years until May 5, 2031. Similarly, the contract of CFO Claudia Schmitt, previously due to end in June 2026, has been extended until June 30, 2031. With this decision, the Supervisory Board underscores its commitment to continuity and expresses strong confidence in the executive team, which has included Klaus Buchwald as COO since June 2024 alongside Dr. Heckmeier and Claudia Schmitt.
“Over the past two years, Michael Heckmeier and Claudia Schmitt have successfully advanced Siltronic AG and provided important impetus for its strategic direction,” said Dr. Tobias Ohler, Chairman of the Supervisory Board of Siltronic AG. “Since taking office in May 2023, Michael Heckmeier has guided the company through a challenging environment for the wafer industry, strengthened Siltronic’s position as a technology leader, and made the organization more efficient for the future. With her extensive financial expertise, Claudia Schmitt has shaped the financial management of the Group and has prudently steered Siltronic’s financial stability following several years of substantial growth investments. The Executive Board team is navigating the current economic challenges with foresight and has strengthened the company’s resilience through targeted cost and liquidity measures. I am very pleased to continue our trusted collaboration with this exceptionally well-coordinated team.”
Dr. Michael Heckmeier commented: “I am grateful to the Supervisory Board for the trust they have placed in me. Together with my Executive Board team and our highly motivated employees, we will continue to drive Siltronic AG’s successful development – with a clear focus on preparing for the next phase of growth.” Claudia Schmitt added: “I too am very much looking forward to contributing to Siltronic AG’s strong financial performance and value creation for another five years.”
Dr. Michael Heckmeier
Dr. Michael Heckmeier has served as CEO of Siltronic AG since May 2023. He studied mathematics and physics and earned a PhD in physics from the University of Konstanz. He began his career at Merck in 1998, holding various roles in the Liquid Crystals division, overseeing material development programs and the New Business department. In 2015, he took over the global Pigment & Cosmetics business unit and, from 2017, led the global Display Solutions business as Executive Vice President.
Claudia Schmitt
Claudia Schmitt has been CFO of Siltronic AG since June 2023. After completing a commercial apprenticeship, she earned a degree in business administration from Saarland University in Saarbrücken in 1998. She began her career in various controlling roles at Wacker Chemie AG before joining Siltronic AG in 2009, where she served as Corporate Vice President responsible for Controlling and Treasury.
Klaus Buchwald
Klaus Buchwald has been COO of Siltronic AG since June 2024. He holds degrees in mechanical engineering and industrial engineering. He spent over 21 years at Infineon, most recently as Senior Vice President Operations for the Green Industrial Power division and Executive Vice President Corporate Supply Chain. He also held leadership roles at Rohde & Schwarz and began his career at a renowned management consultancy.
Original – Siltronic
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Renesas Electronics Corporation announced its consolidated financial results for the second quarter and first half of the fiscal year ended June 30, 2025. While the company posted solid operational performance under non-GAAP metrics, IFRS results reflected significant one-off charges leading to substantial losses.
Q2 Summary of Consolidated Financial Results
Summary of Consolidated Financial Results (Non-GAAP basis)
Three months ended June 30, 2025 Six months ended June 30, 2025 Billion Yen % of Revenue Billion Yen % of Revenue Revenue 324.6 100.0 633.4 100.0 Gross profit 184.4 56.8 359.6 56.8 Operating profit 91.9 28.3 175.7 27.7 Profit attributable to owners of parent 77.8 24.0 151.1 23.9 EBITDA 110.2 33.9 213.7 33.7 Summary of Consolidated Financial Results (IFRS basis)
Three months ended June 30, 2025 Six months ended June 30, 2025 Billion yen % of Revenue Billion yen % of Revenue Revenue 325.5 100.0 634.3 100.0 Gross profit 181.3 55.7 354.2 55.8 Operating profit 39.8 12.2 61.3 9.7 Loss attributable to owners of parent (201.3) (61.9) (175.3) (27.6) EBITDA 83.6 25.7 159.3 25.1 Reconciliation of Non-GAAP gross profit to IFRS gross profit and Non-GAAP operating profit to IFRS operating profit
(Billion yen)
Three months ended June 30, 2025 Six months ended June 30, 2025 Non-GAAP gross profit
Non-GAAP gross margin184.4
56.8%359.6
56.8%Reconciliation items in non-recurring revenue 0.9 0.9 Amortization of purchased intangible assets and depreciation of property, plant and equipment (0.2) (0.5) Stock-based compensation (0.7) (1.5) Other reconciliation items in non-recurring
expenses and adjustments(2.9) (4.3) IFRS gross profit
IFRS gross margin181.3
55.7%354.2
55.8%Non-GAAP operating profit
Non-GAAP operating margin91.9
28.3%175.7
27.7%Reconciliation items in non-recurring revenue 0.9 0.9 Amortization of purchased intangible assets and depreciation of property, plant and equipment (25.5) (60.0) Stock-based compensation (10.3) (20.0) Other reconciliation items in non-recurring expenses and adjustments (17.2) (35.3) IFRS operating profit
IFRS operating margin39.8
12.2%61.3
9.7%Original – Renesas Electronics
