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Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behavior that delivers an outstanding figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as outstanding robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, thereby significantly reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.
This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175 °C. Designers can be further reassured by Nexperia’s reputation as a proven manufacturer of high-quality semiconductor products in a range of semiconductor technologies supported by a robust supply chain.
Original – Nexperia
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LATEST NEWS / SiC / WBGROHM Unveils Level 3 SPICE Models for SiC MOSFETs with 50% Faster, High-Accuracy Circuit Simulations
July 10, 2025
1 Min ReadROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.
Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.
The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.
As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.
Original – ROHM
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Efficient Power Conversion Corporation (EPC) introduced EPC91118, the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 ARMS per phase from a 15 V to 55 V DC input in an ultra-compact circular form factor.
At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies—all on a single board that fits entirely within a 32 mm diameter footprint.
“The EPC91118 is a breakthrough for humanoid robotics, shrinking inverter size by 66% vs. silicon while eliminating electrolytic capacitors—thanks to GaN ICs and high-frequency operation,” said Alex Lidow, CEO and co-founder of EPC.
Key Features of the EPC91118 Evaluation Board:
- 15 ARMS per phase drive capability for 3-phase BLDC motors
- Integrated current and voltage sensing with high-resolution encoder for rotor position
- RS485 protocol support for real-time communication
- 100 kHz PWM frequency with 50 ns dead time
- Fully integrated board including controller, sensing, and power conversion
- MLCC-only DC link reduces size and enhances reliability
- Dimensions: 32 mm diameter inverter, 55 mm diameter external frame
The design was shaped to fit seamlessly inside humanoid joint motors, enabling low-profile, high-efficiency motion control. The high switching frequency enabled by GaN allows the use of compact multi-layer ceramic capacitors (MLCCs) rather than bulkier electrolytic capacitors, contributing to a lower profile and higher reliability design.
With a 66% smaller footprint compared to traditional silicon MOSFET implementations, the EPC91118 sets a new standard in motor drive integration for emerging robotics and drone markets.
For detailed technical specifications, schematics, and to request a sample, visit the EPC91118 product page.
Original – Efficient Power Conversion
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Vishay Intertechnology, Inc. introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile SlimSMA HV (DO-221AC) package. Featuring a merged PIN Schottky (MPS) design and minimum creepage distance of 3.2 mm, the 1 A VS-3C01EJ12-M3 and 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3 combine low capacitive charge with temperature-invariant switching behavior to increase efficiency in high speed, hard-switching power designs.
For high voltage applications, the high creepage distance of the Vishay Semiconductors devices released today provides improved electrical isolation, while their SlimSMA HV package features a molding compound with a high CTI ≥ 600 to ensure excellent electrical insulation. For space-constrained designs, the diodes offer a low profile of 0.95 mm compared to 2.3 mm for competing SMA and SMB packages with a similar footprint.
Unlike silicon diodes, the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 maintain a low capacitive charge down to 7.2 nC irrespective of temperature, resulting in faster switching speeds, reduced power losses, and improved efficiency for high frequency applications. In addition, the devices have virtually no recovery tail, which further improves efficiency, while their MPS structure delivers a reduced forward voltage drop down to 1.30 V.
With a high operating temperature of +175 °C, typical applications for the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3 will include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies; energy generation and storage systems; industrial drives and tools; and X-ray generators. For easy paralleling in these applications, the devices offer a positive temperature coefficient.
RoHS-compliant and halogen-free, the diodes feature a Moisture Sensitivity Level of 1 in accordance with J-STD-020 and meet the JESD 201 class 2 whisker test.
Original – Vishay Intertechnology
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Aehr Test Systems announced financial results for its fiscal 2025 fourth quarter and full year ended May 30, 2025.
Fiscal Fourth Quarter Financial Results:
- Net revenue was $14.1 million, compared to $16.6 million in the fourth quarter of fiscal 2024.
- GAAP net loss was $(2.9) million, or $(0.10) per diluted share, compared to GAAP net income of $23.9 million, or $0.81 per diluted share, which included a tax benefit of approximately $20.7 million, in the fourth quarter of fiscal 2024.
- Non-GAAP net loss, which excludes stock-based compensation, acquisition-related adjustments and restructuring charges, was $(0.2) million, or $(0.01) per diluted share, compared to non-GAAP net income of $24.7 million, or $0.84 per diluted share, which included the tax benefit and excluded stock-based compensation and acquisition-related costs, in the fourth quarter of fiscal 2024.
- Bookings were $11.1 million for the quarter.
- Backlog as of May 30, 2025 was $15.2 million. Effective backlog, including bookings since May 30, 2025, is $16.3 million.
- Total cash, cash equivalents and restricted cash as of May 30, 2025 was $26.5 million, compared to $31.4 million at February 28, 2025.
Fiscal Year Financial Results:
- Net revenue was $59.0 million, compared to $66.2 million in fiscal 2024.
- GAAP net loss was $(3.9) million, or $(0.13) per diluted share, compared to GAAP net income of $33.2 million, or $1.12 per diluted share, which included a tax benefit of approximately $20.7 million, in fiscal 2024.
- Non-GAAP net income was $4.6 million, or $0.15 per diluted share, which excludes stock-based compensation, acquisition-related adjustments and costs, restructuring charges and officer severance benefits, compared to non-GAAP net income of $35.8 million, or $1.21 per diluted share, which included the tax benefit and excluded stock-based compensation and acquisition-related costs, in fiscal 2024.
- Cash used in operating activities was $7.4 million for fiscal 2025.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“Fiscal 2025 was a transformative year for Aehr Test Systems, marked by significant progress on our strategic initiatives to expand our total addressable market, diversify our customer base, and enhance our product portfolio. We expanded into new markets for test and burn-in, including artificial intelligence processors for both wafer and package level, gallium nitride power semiconductors, data storage devices, and silicon photonics integrated circuits for optical chip-to-chip communication, unlocking substantial growth opportunities beyond our concentration in silicon carbide last fiscal year.
“A major milestone was the successful launch and adoption of our first production wafer level burn-in (WLBI) system specifically for artificial intelligence (AI) processors. This breakthrough validates the feasibility and cost benefits of WLBI testing for high-power AI devices, attracting strong interest from leading processor companies considering high-volume adoption.
“We are excited to report today that one of these companies has asked us to move forward with an evaluation for wafer level testing of one of their current high-volume processors. Based on their feedback, we believe that if this evaluation is successful, they intend to transition to high-volume production wafer-level testing, which would represent a significant opportunity for Aehr. We also expect to move to evaluation phases with additional AI companies during this fiscal year and believe we can capture a meaningful share of the total production burn-in market for AI processors with our FOX WLBI systems and proprietary WaferPak Contactors.
“We also expanded into packaged part qualification and production burn-in for AI processors this year through the acquisition of Incal Technology, enabling us to offer both wafer level and packaged part reliability burn-in and test solutions. Since the acquisition, we’ve achieved record shipments of packaged part burn-in (PPBI) systems and secured a major hyperscaler as our first production AI customer in this space. This customer is one of the premier large-scale data center hyperscalers that is developing its own AI processors and significantly expanding this capacity. They have indicated plans to ramp this device over the next year and have already begun discussing their next generation processors with us to ensure we can meet their production capacity needs. Aehr is the only company on the market that offers both a WLBI and a PPBI system for both qualification and production burn-in of AI processors, and we are very excited about our new AI product offerings and the expanded total addressable market they bring to us.
“In gallium nitride (GaN) power semiconductors, we secured the first production order from a leading automotive semiconductor supplier for our FOX-XP high-power multi-wafer production system with high voltage for volume production of GaN devices. We are in discussions and engagements with multiple other potential new GaN customers, highlighting the growing adoption of WLBI for GaN devices and signaling future opportunity as this market expands.
“GaN offers a wider range of applications than silicon carbide and is poised for significant growth in the next decade. While about 70% of silicon carbide’s largest market segment is for electric vehicles (EVs) and EV charging infrastructure, GaN is more diverse and not focused on a single application. With more uses, there are more potential customers and a larger market for GaN compared to silicon carbide.
“We are also making significant progress in the hard disk drive market. This past year, our lead customer began ordering multiple FOX-CP solutions for burn-in and stabilization of new devices in hard disk drives, representing follow-on orders to the first production order we received from them back in 2019. This customer is one of the top suppliers of data storage devices worldwide. In addition to the multiple systems we have in backlog, they have indicated they will be purchasing additional systems both in the short term and over time.
“We saw solid momentum in the silicon photonics market this year with the adoption of optical chip-to-chip communication and optical network switching. Several companies, including AMD, Nvidia, Intel, TSMC, and GlobalFoundries, have announced product roadmaps for devices that utilize optical chip-to-chip communication. We have several customers in this market, including the largest supplier of silicon photonics integrated circuits in the market. We have seen a significant number of new WaferPak designs from our installed base of systems for new designs that they use for qualification and development work on their FOX wafer level test and burn-in systems. We also now offer a new system with higher power 3500 watt per wafer configuration to meet the needs of new high-power wafers for optical I/O and chip-to-chip communication devices. This is also available as an upgrade to our FOX-NP systems for low-volume production and product qualification, as well as our FOX-XP nine wafer production systems. This system can also be configured with our new integrated WaferPak Auto aligner, which provides fully hands-free factory automation of silicon photonics integrated circuit wafers. We expect to see not only revenue from system upgrades and WaferPaks but also for incremental FOX-XP system and WaferPak orders to meet the capacity needs of the silicon photonics market this year. We remain very excited about the silicon photonics market and see this as a significant market opportunity for our products.
“While the silicon carbide market growth has slowed due to a slower growth in EVs, we remain confident in its long-term opportunity for Aehr and our leadership in WLBI solutions for this sector. EVs are still growing significantly worldwide, and we believe the silicon carbide market continues on a robust long-term growth trajectory. Demand for silicon carbide remains significantly driven by battery EVs, but silicon carbide devices are also gaining traction in other markets, including power infrastructure, solar, and various industrial applications. This quarter, we shipped our first high-voltage configuration of the FOX-XP, which can test 18 wafers simultaneously, extending the capabilities of our proven nine-wafer high-voltage configuration. We believe we are well-positioned in the silicon carbide market with our industry-leading solution for WLBI.
“We are also collaborating with a global leader in flash memory to demonstrate our FOX-XP platform for high-volume production wafer level test and burn-in of flash memory wafers, aiming to provide a competitive, cost-effective alternative to traditional testing methods. New technologies in NAND are driving new requirements for WLBI to address the manufacturing and negative yield implications of testing these NAND devices at the package or system level, and we believe our FOX WLBI solution is positioned to be a very competitive low-cost alternative to packaged part or alternative wafer level test and burn-in solutions for this market.
“Looking ahead, we are well-positioned to capitalize on strong demand across various semiconductor applications. The strategic investments we made this past year have built the infrastructure and capacity needed for significant growth, and we plan to boost our research and development efforts to add more capabilities and resources for our expanding customer base. We believe that nearly all the opportunities and market verticals we serve will experience order growth in fiscal 2026. The one exception may be silicon carbide, as customer forecasts for this market are back-half loaded, with stronger growth expected in our fiscal 2027.
“While we remain confident in Aehr’s long-term growth prospects, we continue to experience some timing-related delays in order placements due to tariff-related uncertainty, particularly in our first quarter. Accordingly, we are maintaining our cautious approach and are not reinstating specific guidance beyond what we have already stated, which is that we anticipate order growth across all our segments this fiscal year with the possible exception of silicon carbide. Overall, we are very optimistic about our growth opportunities in the diverse markets we serve and our ability to meet increasing demand.”
Original – Aehr Test Systems
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Toshiba Corporation has developed a resin-insulated SiC power semiconductor module that greatly improves power density, which represents the capacity to process power per unit area, by using resin as the insulating substrate through technology for the distributed layout design of small-area chips and design optimization technology using AI, which are unique to Toshiba.
SiC power modules can provide high-capacity power conversion under high voltage and high current, and are becoming widespread in power converters for renewable energy, industry, and electricity-driven transportation such as railroads.
Semiconductor modules use an insulating substrate in order to prevent electrical interference with surrounding devices; although resin insulating substrates offer lower cost and longer service life with durability against thermal fatigue, they also have the problems of lower thermal conductivity and higher thermal resistance compared with the ceramic insulating substrates now in widespread use. A large cooling system is needed in order to maintain high performance, but this creates the separate problem of increasing the size of the overall device.
Toshiba has increased the thermal dissipation area and reduced thermal resistance by decreasing the area of chips mounted on a module in comparison with conventional chips and arranging a larger number of chips spread around the entire module. As the number of chips increases, the number of parameters for designing the chip layout also increases and the overall optimal design, including the electrical and thermal characteristics, becomes more difficult. However, an optimal design was possible by means of a unique optimization algorithm using AI.
When the distributed layout design of small-area chips and design optimization technology using AI were employed and a prototype resin-insulated SiC power module was tested, it was found to have 21% lower thermal resistance compared with conventional ceramic-insulated SiC power modules. Furthermore, when the developed SiC power modules were used in a general inverter, a trial calculation found that the cooling system size could be reduced by 61%. This technology is expected to enable downsizing of power conversion devices, thereby saving space and reducing costs. This is expected to contribute to achieving carbon neutrality, for example, through further expansion of electric transportation and renewable energy.
Toshiba presented details of this technology at the 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025, the foremost international conference in the power semiconductor industry, which was held in Kumamoto, Japan from June 1 to June 5.
Development background
Power semiconductors, which convert electrical power into an appropriate form (voltage, direct/alternating current, frequency) for efficiently operating equipment, are expected to have increasing market growth in the future against a backdrop of increased electricity generation due to the spread of electric vehicles and renewable energy for achieving carbon neutrality. SiC power modules are equipped with multiple SiC power semiconductor chips capable of high-efficiency power conversion to enable high-capacity power conversion of high voltages and high currents. These modules are becoming widespread in power converters for renewable energy, industry, and electric transportation such as railroads.
The power modules that are currently widely commercialized employ ceramic insulation. Although the Toshiba group also manufactures and sells ceramic-insulated SiC power modules through Toshiba Electronic Devices and Storage Corporation, which is responsible for Toshiba’s semiconductor business, at the same the company has been working on developing resin-insulated SiC power modules that utilize a resin insulating substrate for next-generation devices.
Resin-insulated devices are expected to have advantages of lower cost and longer service life with durability against thermal fatigue in comparison with ceramic insulation, but they also suffer from the problems of low thermal conductivity and high thermal resistance. If the thermal resistance is high, it becomes difficult to transport heat through the material, trapping the heat inside. This makes it impossible to effectively dissipate the heat generated by the semiconductor module, causing power loss and consequently causes a decrease in power semiconductor performance including power density.
Power modules generate heat regardless of the type of insulation, including ceramic, meaning that a cooling system is required when incorporating them into power conversion devices in order to remove the generated heat and reduce power losses. Because resin insulating substrates are characterized by poor heat dissipation in comparison with ceramic, a larger cooling system is needed in order to maintain high performance, leading to the further problem that the device becomes large.
Features of the technology
To address the above issues, Toshiba decreased the area of the SiC power semiconductor chips installed in the module, increased the number of mounted chips, and arranged the chips distributed across the entire module. Because the heat dissipation area of the chips is large with a radiance shape toward the heatsink at the bottom of the module, the heat dissipation area increases as the number of chips increases, leading to improved thermal resistance.
Figure 1: Enlargement of thermal dissipation area by layout of small-area chips
However, if the chips are not arranged appropriately, interference arises between the heat dissipation areas, and the heat dissipation area cannot be enlarged efficiently. Furthermore, as the number of chips increases, the number of module design parameters increases, and it becomes difficult to optimize the overall design taking into account both electrical characteristics such as parasitic resistance and switching losses and thermal characteristics.
Therefore, a novel AI was used to optimize the module design parameters such as the chip layout and the layout of the copper pattern on which the chips are mounted. As a result, the upper limit of the thermal dissipation area and the number of chips were increased and thermal resistance, parasitic resistance, and switching losses were improved.
Figure 2: Schematic of module design parameter optimization and change in module characteristics with optimization
When a prototype of the module structure with the optimized design parameters was created and tested, the prototype resin-insulated SiC power module was found to have 21% lower thermal resistance, 21% lower parasitic resistance, and 19% lower switching loss compared with conventional ceramic-insulated SiC power modules. Although large thermal resistance has been a problem with resin-insulated SiC power modules, the proposed technology not only achieved a large improvement in thermal resistance, but also improved the parasitic resistance and switching losses, and the performance far exceeded that of ceramic-insulated SiC power modules.
The reduction effect on the cooling system size when using the developed module in a typical inverter was estimated based on these results, with a trial calculation showing a reduction of 61% in the cooling system size. This technology is expected to enable smaller power conversion devices, leading to space saving and cost reduction. It is also expected to contribute to achieving carbon neutrality, for example, by further increasing the spread of electric transportation and renewable energy.
Figure 3: External appearance of developed SiC power module and improvement in obtained characteristics
Future developments
Toshiba aims to conduct further research and development of this technology while also considering the development of power modules with different current and withstand voltage ratings. It also aims to quickly commercialize this technology at Toshiba Electronic Devices and Storage Corporation. Toshiba is working to contribute to achieving carbon neutrality by increasing the performance of various devices for power electronics applications.
Original – Toshiba
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Wolfspeed, Inc. announced the appointment of Gregor van Issum as Chief Financial Officer (CFO), effective September 1, 2025, following a comprehensive review of internal and external candidates. Van Issum succeeds Kevin Speirits, who is serving as Interim Chief Financial Officer and will remain with Wolfspeed to support the Company and ensure a smooth transition. He will be relocating to North Carolina and be based at company headquarters in Durham, NC, reporting to Wolfspeed CEO, Robert Feurle.
Van Issum brings more than 20 years of experience in transformational restructuring and strategic financing positions across the technology industry. Through senior roles at semiconductor manufacturers ams-OSRAM AG and NXP Semiconductors N.V., he gained an in-depth understanding of how to lead organizations through dynamic business cycles. Most recently, van Issum served as Executive Vice President, Group Controller at ams-OSRAM, where he was deeply involved in driving the financial performance of this multi-billion Euro revenue company. He also led ams-OSRAM’s cost savings programs and sales initiatives in his dual role as the company’s Chief Transformation and Performance Officer.
“We are excited to welcome Gregor to our team as Wolfspeed enters a new era,” said Robert Feurle, Chief Executive Officer. “I witnessed Gregor’s strong analytical and leadership skills firsthand during our time working together at ams-OSRAM. Gregor has helped lead large, multibillion euro businesses with complex manufacturing operations, which will be invaluable to Wolfspeed as we unlock the potential of our purpose-built 200mm platform. The Board and I look forward to collaborating with Gregor as we position Wolfspeed for long-term growth and profitability.”
Van Issum gained valuable M&A and IT experience at ams-OSRAM, where he was responsible for executing and delivering on the business targets for the transactions and managing the strategic direction of the company’s systems. He previously served as Vice President, Strategy of NXP Semiconductors’ Secure Transactions and Identification Solutions segment and served as the CFO of the Secure Identification Solutions and Analog Mixed Signal units.
“In this new role, my priority will be providing Wolfspeed’s investors with transparency and clarity, especially during this transformative period,” said van Issum. “Building on recent steps to restructure Wolfspeed’s balance sheet, I will draw on my experience navigating complex business cycles to help create a capital structure that offers agility to respond to rapid shifts in the market. My background in transformation and restructuring also positions me to support Wolfspeed’s strategic focus on improving profitability. At this pivotal time in the Company’s life cycle, I am honored to help guide Wolfspeed as it leverages its competitive advantages—world-class facilities, exceptional talent, and robust intellectual property—to advance the incredible progress that Robert and the Wolfspeed team have made in recent months and solidify its leadership in silicon carbide technology.”
Van Issum’s appointment follows the addition of Dr. David Emerson, who joined Wolfspeed in May in the newly created role of Chief Operating Officer. With a refreshed leadership team, Wolfspeed is well positioned to navigate near-term market dynamics and seize opportunities to expand its leadership in silicon carbide technologies.
Original – Wolfspeed
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Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies AG, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments.
“The Supervisory Board would like to thank Rutger Wijburg for his guiding work at Infineon. He has laid the foundation for growth, efficiency and resilience in the global manufacturing network. Major milestones under his leadership include the new module for high-volume production in Kulim and the Smart Power Fab in Dresden,” says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon.
“Alexander Gorski brings very broad experience and has done excellent work in a wide variety of management roles in recent years. He is therefore the ideal internal successor to further advance the important Operations area. We wish him all success in this endeavor,” Herbert Diess continued.
“I would like to personally thank Rutger Wijburg for his outstanding work. Thanks to him, our manufacturing landscape is great positioned. I am delighted that Alexander Gorski will take over seamlessly as such a competent successor,” says Jochen Hanebeck, CEO of Infineon.
“I am proud of what the Operations team has achieved over the past few years. Many thanks to all my colleagues for the excellent collaboration and the results we have achieved together. I wish my successor and colleague Alexander Gorski every success in his new role,” says Rutger Wijburg.
“Our powerful manufacturing creates significant value for our customers. I would like to thank the Supervisory Board and Management Board for their trust. I cannot imagine a more exciting role,” says Alexander Gorski.
Rutger Wijburg has been a member of the Management Board of Infineon Technologies AG and Chief Operations Officer since April 2022. In 2018, he joined the company as Managing Director of Infineon Technologies Dresden, bringing along more than 30 years of international experience in the semiconductor industry. A few years later, he took on the role of Head of Frontend, followed by the position of COO.
As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon’s manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens AG) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.
Original – Infineon Technologies
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As the demand for gallium nitride (GaN) semiconductors continues to grow, Infineon Technologies AG is poised to capitalize on this trend and solidify its position as a leading Integrated Device Manufacturer (IDM) in the GaN market. Today, the company announced that its scalable GaN manufacturing on 300-millimeter wafers is on track. With first samples available for customers as of the fourth quarter of 2025, Infineon is well-positioned to expand its customer base and reinforce its position as a leading GaN powerhouse.
As a leader in power systems, Infineon is mastering all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation in electronic devices like smartphone chargers, industrial and humanoid robots or solar inverters.
“Our fully scaled-up 300-millimeter GaN manufacturing will allow us to deliver highest value to our customers even faster while moving towards cost parity for comparable silicon and GaN products,” said Johannes Schoiswohl, Head of GaN Business Line at Infineon. “Almost a year after the announcement of Infineon’s breakthrough in 300-millimeter GaN wafer technology, we are pleased that our transition process is well on track and that the industry has recognized the importance of Infineon’s GaN technology enabled by the strength of our IDM strategy.”
Infineon’s manufacturing strategy primarily relies on an IDM model – owning the entire semiconductor production process, from design to manufacturing and selling the final product. The company’s in-house manufacturing strategy is a key differentiator in the market providing several advantages such as high-quality, faster time-to-market as well as superior design and development flexibility. Infineon is committed to supporting its GaN customers and can scale capacity to meet their needs for reliable GaN power solutions.
Building on its technology leadership, Infineon has become the first semiconductor manufacturer to successfully develop 300-millimeter GaN power wafer technology within its existing high-volume manufacturing infrastructure. Chip production on 300-millimeter wafers is technically more advanced and significantly more efficient compared to established 200-millimeter wafers, as the larger wafer diameter allows 2.3 times more chips to be produced per wafer. These increased capabilities combined with Infineon’s large team of GaN experts and the industry’s broadest IP portfolio are needed as GaN power semiconductors are being rapidly adopted in industrial, automotive, consumer, and computing & communication applications, such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.
Original – Infineon Technologies
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DENSO, a leading mobility supplier, recognized Infineon Technologies AG with a 2025 North America Business Partner Award in the Value Leader category at its annual North America Business Partner Convention (NABPC). During the event, DENSO brought together approximately 150 supplier representatives from across North America to recognize 15 exceptional business partners.
“We are honored to be recognized by DENSO as an exceptional business partner in 2024,” says Andrew Hunter, Regional Segment Head of Automotive Americas at Infineon. “Our mutual success in serving the rapidly evolving automotive market is built on a shared commitment to excellence, and we are proud of our continued work with one of the world’s leading providers of mobility solutions.”
Infineon provides a wide range of zero-defect products and system solutions to DENSO – including its AURIX™ and PSOC™ microcontrollers, OptiMOS™ and automotive MOSFETs, and radar sensors – to support functions such as engine and body control, systems electrification, safety, and autonomy.
DENSO’s Business Partner Awards are given to companies that demonstrate exceptional supplier partnership in such areas as quality, service, technology, value, and sustainability.
A key theme at this year’s NABPC was exploring how DENSO and suppliers can thrive together amid market uncertainties. Throughout the program, DENSO leaders stressed the need to maintain strong relationships, be adaptable and harness each other’s combined strengths to overcome potential difficulties and continue to support cleaner, safer mobility.
“With all the change currently facing our industry, we must remain flexible and resilient to deliver for our customers,” says Kim Buhl, Vice President of the North America Purchasing Group at DENSO. “We can only do this with the help of our suppliers. So, this year, as we congratulate those who have performed exceptionally in creating new value for DENSO, we also thank our entire supplier network. We call on each partner to continue to take on new challenges and opportunities, with us as we strive to contribute to a better world.
Original – Infineon Technologies
