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ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies.
As global energy consumption continues to grow, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approx. 97% of the world’s total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on utilizing wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently.
Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, ROHM has introduced this new IC as the first in a series of isolated gate driver solutions optimized for GaN devices. Safe signal transmission is achieved by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles.
The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling high-frequency operation up to 2MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components.
At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65ns, 33% less than conventional products. These performance improvements allow for stable, reliable operation at higher frequencies while minimizing power loss through better duty cycle control.
With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM’s newly added 650V EcoGaN™ HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also reduces standby power, improving overall system efficiency.
The BM6GD11BFJ-LB is now available. It is offered through online distributors such as DigiKey™, Mouser™ and Farnell™. The sample price is $4.0/unit (excluding tax).
Going forward, ROHM plans to offer gate driver ICs for GaN device control together with GaN device products, supporting simpler application design.
Original – ROHM
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Three leading players in semiconductor research and development – the Leibniz Institute for Crystal Growth (IKZ), the PVA TePla AG, and the Siltronic AG – are combining their expertise in a pioneering project to scale up aluminum nitride (AlN) crystal growth. The project focuses on the fabrication of 4-inch AlN substrates to enable advanced applications in high-power electronics and ultraviolet photonics.
Aluminum nitride (AlN) is an ultra-wide bandgap (UWBG) semiconductor material characterized by outstanding intrinsic properties, including high critical electric field strength, superior thermal conductivity, and optical transparency in the ultraviolet spectrum. These attributes make AlN a highly promising substrate and device material for next-generation power electronic components and UV disinfection technologies, enabling compact, energy-efficient, and thermally robust device architectures.
The project’s focus on scaling AlN crystal diameters from 2 to 4 inches addresses a fundamental requirement for transitioning this key material from research-scale to industrial manufacturing environments. The project is set to make a substantial contribution to advancing Europe’s sovereignty in the field of semiconductor materials research. AlN-based power electronics enable major efficiency gains in electromobility, renewable energy, and industrial systems. In UV photonics, new opportunities arise in areas such as disinfection (preventing pandemics and water treatment), production technology (material processing), agriculture (yield enhancement), as well as sensors and medical applications.
The partners are leveraging their respective core competencies to jointly develop a market-ready technology for the industrial production of aluminum nitride crystals.
The Leibniz Institute for Crystal Growth (IKZ) brings its long-standing expertise in growing AlN crystals to the project and has a proven 2-inch AlN crystal growth platform. Thanks to its leading position in producing high-quality AlN wafers, the institute is widely acknowledged as a European reference in this field of technology.
Siltronic AG, one of the world’s leading producers of silicon wafers (using both Czochralski and Float Zone methods), contributes its extensive experience in in the research and development of substrates for power electronics and in precision metrology – both of which are crucial for the industrial application of AlN wafers.
PVA TePla AG is an internationally leading provider of high-tech solutions in the fields of material and metrology technology with decades of experience in manufacturing crystal growing systems. With its expertise in the Physical Vapor Transport (PVT) method, particularly based on comprehensive experience from the SiC market, PVA TePla provides the technological equipment foundation for a reliable and reproducible growth process for bulk AlN crystals with industry-relevant diameters. This forms a central prerequisite for scaling and industrializing AlN technology.
Through their collaboration, IKZ, PVA TePla, and Siltronic are firmly demonstrating their commitment to Europe’s technological sovereignty and the sustainable development of a semiconductor materials value chain. “The expansion from 2-inch to 4-inch is a crucial milestone in making AlN accessible for mass production”, the project partners explain. “Thanks to the synergies among the partners, we can overcome the technological barriers.”
Original – Siltronic
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Ideal Power Inc. announced two major developments that underscore growing traction for its B-TRAN® technology in the electric vehicle (EV) market. The company is now collaborating with a fourth global Tier 1 automotive supplier, while also securing a significant order from another Tier 1 supplier for evaluation of its B-TRAN® devices, SymCool® power modules, and reference designs for solid-state EV contactors.
These suppliers serve several top 10 global automotive OEMs, including previous Ideal Power engagements with Stellantis and three other Tier 1 suppliers. This reflects Ideal Power’s expanding footprint within the EV industry and the transition away from legacy electromechanical contactors toward advanced solid-state solutions.
B-TRAN®-enabled solid-state contactors provide numerous advantages over conventional electromechanical devices. These include:
- Ultra-low conduction losses for greater efficiency
- Bidirectional operation, reducing component count by half
- Faster response times, eliminating arcing and enhancing safety
- Programmable settings for trip and current limits
- Integrated diagnostics for predictive maintenance
- Lower cost compared to silicon carbide-based alternatives
Ideal Power recently shipped packaged B-TRAN® devices, SymCool® modules, and driver boards to a Tier 1 partner evaluating an innovative solid-state contactor design. The supplier also requested budgetary quotes for millions of SymCool® modules as part of long-term planning—signaling serious interest and commercial potential.
“We are excited to see growing demand and engagement from the world’s top automotive suppliers,” said Dan Brdar, CEO of Ideal Power. “Our B-TRAN® technology is proving to be a compelling alternative to traditional contactors, and we believe it will become the standard in EV and hybrid EV applications within the next five years.”
This momentum highlights Ideal Power’s continued leadership in delivering reliable, efficient, and cost-effective solid-state solutions for next-generation EV power architectures.
Original – Ideal Power
