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EPC Space announces the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems.
As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.
With the lowest RDS(on) and gate charge in its class, the EPC7030MSH delivers the highest power current rating among all 300 V rad-hard GaN FETs currently on the market. This makes it ideal for front-end DC-DC converters that must operate under stringent thermal and radiation constraints.
“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” said Bel Lazar, CEO of EPC Space.
Key Features:
- Rated for 300 V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV
- Lowest RDS(on) and QG of any 300 V rad-hard GaN FET
- Highest current rating in its voltage class
- FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance
- Compatible with existing GaN gate drivers
Target Applications:
- Front-end DC-DC converters in satellite power systems
- Power conversion for higher voltage distribution buses
- Electric propulsion platforms requiring compact, high-performance switching
The EPC7030MSH is part of EPC Space’s ongoing mission to deliver space-grade Radiation Hardened GaN solutions that outperform silicon Radiation Hardened MOSFETs in efficiency, size, and thermal management—enabling more capable, reliable, and scalable satellite systems.
For 500-unit quantities engineering models are priced at 236 USD, and Rad Hard space qualified are priced at 349 USD.
For product details, please see the EPC7030MSH page.
Original – EPC Space
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Silvaco Group, Inc. announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride (GaN) devices using Silvaco’s industry-leading Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT’s role in the EU Chips Act initiative through its participation in the APECS pilot line (www.apecs.eu).
Fraunhofer ISIT’s Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco’s industry-leading design tools—including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™—to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT’s post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco’s Victory Design of Experiments™ (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts.
“This collaboration marks a significant step forward in strengthening Europe’s semiconductor capabilities and driving the global evolution of GaN devices,” said Eric Guichard, Ph.D., Senior Vice President and General Manager of Silvaco’s TCAD Division. “Institutes like Fraunhofer ISIT are instrumental in pushing the boundaries of innovation in device and process technology. By collaborating with Fraunhofer ISIT, we not only accelerate their development efforts but also enhance our own TCAD tools to meet the demands of future device design.”
“We are excited to expand our GaN design capabilities with Silvaco’s Victory products,” said Michael Mensing, Ph.D., Head of the Advanced Devices Group at Fraunhofer ISIT. “By using Silvaco’s advanced TCAD solutions, our teams can explore, understand, and optimize the performance of GaN devices with greater depth and efficiency. Especially during our current development of high voltage lateral and vertical GaN devices based on engineering substrates, like Qromis® Substrate Technology, we see many physical effects that require accurately calibrated process and device models.”
In addition to the active utilization of Silvaco’s tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco’s Victory TCAD™ platform to prepare the next generation of semiconductor device engineers.
Original – Silvaco
