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As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.
ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.
A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.
Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.
ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.
Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.
Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.
The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
Original – ROHM
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Toshiba Electronic Devices & Storage Corporation has developed innovative technology that significantly reduces losses in silicon carbide (SiC) trench MOSFETs while enhancing UIS ruggedness. Additionally, Toshiba has developed SiC semi-super junction Schottky barrier diodes (SJ-SBDs) that suppress the increase in on-resistance at high temperatures. These advances are expected to greatly improve the reliability and efficiency of devices used in power conversion applications, such as electric vehicles and renewable energy systems.
Power semiconductors, which supply and control power, are essential for energy-saving in all electrical equipment, and achieving carbon neutrality. With the electrification of automobiles and the miniaturization of industrial equipment, demand for power semiconductors is expected to continue to grow. This is particularly true of SiC MOSFETs, which are gaining attention as next-generation devices that improve better power conversion efficiency than current silicon (Si) MOSFETs.
Among them, SiC trench MOSFETs, where gates are formed in a trench to reduce on-resistance, and SiC Schottky barrier diodes (SBDs), which efficiently convert power by metal semiconductor junction on SiC, are widely used in high-efficiency power conversion applications, such as electric vehicles and renewable energy systems. However, these applications require operation in high-temperature environments that pose challenges for reliability and efficiency improvement.
SiC trench MOSFETs must protect the gate oxide from high electric fields. However, the relationship between UIS ruggedness and the grounding resistance of the electric field protection structure has not been clearly understood, making it difficult to achieve both high gate oxide reliability and low on-resistance.
In addition, although SiC SBDs can operate at higher temperatures than conventional Si SBDs, they must be able to handle increased resistance at elevated temperatures, which leads to higher on-resistance.
Toshiba has developed two key technologies to address these issues.
Technology to Improve UIS Ruggedness of SiC Trench MOSFETs
Figure 1. Structure of SiC Trench MOSFET and Location of Bottom p-well Toshiba has confirmed that forming a protective layer called a Bottom p-well in the trench of SiC trench MOSFETs (Figure 1) and making appropriate reductions in the grounding resistance of the Bottom p-well improves UIS ruggedness. This clarified the previously uncertain relationship between UIS ruggedness and the grounding resistance of the electric field protection structure. The SiC trench MOSFETs prototyped by Toshiba reduced on-resistance by approximately 20% compared to conventional planar SiC MOSFETs (Figure 2).
Figure 2. Comparison of On-Resistance Between Conventional Planar SiC MOSFET and SiC Trench MOSFET (Toshiba test results) Improvement of SiC SJ-SBD Characteristics
Figure 3. Structure of conventional SiC SBDs and SiC SJ-SBDs Toshiba also developed SiC SJ-SBDs that reduce resistance in the drift layer by placing pillars within in that suppress resistance increases at high temperatures (Figure 3 (b)). By comparing the on-resistance changes in conventional SiC SBDs (Figure 3 (a)) and SiC SJ-SBDs at different temperatures, Toshiba confirmed the lower on-resistance of the SiC SJ-SBDs, especially at high temperatures (Figure 4). This is due to the SJ structure, which achieves a flat electric field distribution and reduce on-resistance. The 650V SiC SJ-SBDs developed by Toshiba reduces on-resistance by approximately 35% at high temperatures of 175°C (448.15K) compared to conventional SiC SBDs.
Figure 4. Comparison of On-Resistance and Temperature Dependence Between Conventional SiC SBD and SiC SJ-SBD (Toshiba test results) These two technologies further reduce loss in SiC trench MOSFETs and SiC SBDs, improving the reliability and efficiency of devices for use in future high-efficiency power conversion applications. Such application is particularly expected in fields such as electric vehicles and renewable energy systems. Toshiba aims to further improve the technologies and achieve early practical application.
Toshiba presented details of the new technologies at the 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025 held in Kumamoto from June 1 to 5. This achievement was based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
Original – Toshiba
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Renesas Electronics Corporation announced the appointment of Zaher Baidas as Senior Vice President and General Manager of Power, effective July 1, 2025. Zaher will be responsible for overseeing the company’s power management and discrete product portfolios and for driving the execution of Renesas’ global power strategy.
Zaher, currently Vice President of the Timing Division within the Analog & Connectivity product group, joined Renesas in 2019 through the acquisition of Integrated Device Technology, Inc. He brings a strong engineering background and a proven track record of driving innovative solutions. His global mindset and business acumen will be instrumental in accelerating transformation and enhancing Renesas’ power business performance on a global scale. Zaher will join Renesas’ leadership team and will report directly to CEO Hidetoshi Shibata.
Zaher succeeds Chris Allexandre, who will leave Renesas on June 30, 2025. Chris had led and transformed the Power business since assuming the role, aligning it closely with the company’s strategic priorities and significantly improving operational performance. Prior to this role, he served as Chief Sales & Marketing Officer, where his leadership accelerated the company’s shift toward high-growth segments, restructured the go-to-market strategy, and strengthened the foundation for solutions-led growth. Renesas extends its sincere appreciation to Chris for more than six years of outstanding and dedicated service during a period of transformation, helping position the company for long-term success.
Original – Renesas Electronics
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Ideal Power Inc. announced a partnership with Kaimei Electronic Corp., a leading manufacturer of electrolytic capacitors, resistors and motor fans. Under this agreement, Kaimei Electronic Corp. will distribute Ideal Power’s products throughout Asia.
Kaimei Electronic Corp. and Ideal Power are partnering to promote Ideal Power’s innovative B-TRAN® technology to Kaimei’s existing and prospective customer base alongside their own product portfolio. B-TRAN® will be the first product line for which Kaimei will operate as a third-party distributor.
Kaimei has had decades of success as a manufacturer of high value-added electronic components selling into 60 countries in Asia, Europe, and the Americas. Kaimei and Ideal Power share many target markets including industrial, automotive, renewable energy, energy storage, UPS and EV charging. The partnership will leverage Kaimei’s existing sales expertise and customer network as the same customers for Kaimei’s products are also potential customers for B-TRAN®.
“We are excited to enter into this distribution partnership with Kaimei. They already serve customers in B-TRAN® target industrial, utility and automotive markets in Asia. Asia is the world’s largest market for power electronics, and Asian companies typically move faster than their European and U.S. counterparts in adopting new technologies. We look forward to collaborating with Kaimei to secure orders to drive revenue growth and potentially lead to additional B-TRAN® design wins,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
The distribution agreement with Kaimei aligns with Ideal Power’s asset-light business model. Ideal Power leverages the large investment already made in silicon processing, packaging, distribution, demand creation and support infrastructure. This business model allows the Company to continue focusing on disruptive B-TRAN® technology improvements and commercialization while driving working capital efficiency.
Original – Ideal Power
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A pan-European consortium dedicated to developing sustainable processes and technologies for the semiconductor-manufacturing industry today announced the launch of the GENESIS project. This integrated, large-scale initiative aims to enable Europe’s chip industry to meet its sustainability goals—from materials development to final waste treatment.
Coordinated by CEA-Leti, the three-year project brings together 58 partners spanning the entire European semiconductor value chain, from large enterprises and SMEs to research institutes, universities, and industry associations. GENESIS will drive innovative solutions in emission control, eco-friendly materials such as alternatives to PFAS-based ones, waste minimization, and raw material reuse, directly aligned with the European Green Deal and European Chips Act.
“GENESIS is designed to address the complex challenges of building a truly sustainable semiconductor ecosystem,” said Laurent Pain, Sustainable Electronics Program director at CEA-Leti. “Its structure reflects both the urgency and the opportunity of Europe’s green transition, powered by the complementary expertise and close collaboration of its partners.”
Pain, manager of the project, noted that the team expects to deliver approximately 45 sustainability-driven innovations covering the semiconductor lifecycle, guided by four strategic pillars that form the technological foundation of GENESIS’s vision for a green European semiconductor industry:
- Pillar 1 – Monitoring & Sensing: Real-time emissions tracking, traceability, and process feedback systems,
- Pillar 2 – New Materials: PFAS-free chemistries and low-GWP alternatives for advanced semiconductor processes,
- Pillar 3 – Waste Minimization: Innovations in recycling (solvent, gas, slurries), reuse, and sustainable replacements, and
- Pillar 4 – Critical Raw Materials Mitigation: Strategies to reduce dependency on CRM and strengthen resource security.
Complimenting these pillars, the project’s objectives establish an overall framework that includes deploying sensor-integrated abatement systems to reduce PFAS and GHG emissions. It also aims to position Europe as a leader in green semiconductor innovation by aligning supply-chain practices with environmental regulations.
“The launch of the GENESIS project marks a critical step toward aligning Europe’s semiconductor ambitions with its climate commitments,” said Anton Chichkov, head of programs at Chips Joint Undertaking (Chips JU), a public-private partnership created to bolster Europe’s semiconductor industry by fostering collaboration between the EU, member states, and the private sector.
“As chips become the backbone of everything from AI to energy systems, their environmental footprint is rapidly growing,” he said. “GENESIS responds to this urgent challenge by pioneering sustainable alternatives in materials, waste reduction, and resource efficiency. Through this initiative, Europe is not only investing in cleaner technologies—it’s positioning itself as a global leader in green semiconductor manufacturing.”
With a budget of close to €55 million, the GENESIS project is co-funded through the Chips Joint Undertaking by the European Commission, participating EU member states, and the Swiss State Secretariat for Education, Research and Innovation (SERI).
Original – CEA-Leti
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Reflex Drive, a deep tech startup from India has selected power devices from Infineon Technologies AG for its next-generation motor control solutions for unmanned aerial vehicles (UAVs). By integrating Infineon’s OptiMOS™ 80 V and 100 V , Reflex Drive’s electric speed controllers (ESCs) achieve improved thermal management and higher efficiency, enabling high power density in a compact footprint.
Additionally, the use of Infineon’s MOTIX™ IMD701 controller solution – which combines the XMC1404 microcontroller with the MOTIX 6EDL7141 3-phase gate driver IC – delivers compact, precise, and reliable motor control. This enables improved performance, greater reliability, and longer flight times for UAVs.
“Our partnership with Reflex Drive is an important contribution to our market launch strategy and presence in India,” says Nenad Belancic, Global Application Manager Robotics and Drones at Infineon. “Our partner has proven its expertise with numerous customers who have obtained aviation certifications. In addition, the company has presented its innovative technologies enabled by Infineon systems at important international industry events.”
“Our collaboration with Infineon has led to significant advances in UAV electronics,” says Amrit Singh, Founder of Reflex Drive. “We believe drones have the potential to transform industries, from agriculture to logistics, and with Infineon’s devices, we can help drive this transformation at the forefront.”
Reflex Drives’s ESCs with field-oriented control (FOC) offer improved motor efficiency and precise control, while its high-performance BLDC motors are designed for optimized flight control and enable predictive maintenance of drive systems. Weighing only 180 g and with a compact volume of 120 cm³, the ESCs can deliver continuous power output of 3.8 kW (12S/48 V, 80 A continuous).
Due to their lightweight design, robust power output, and consistent FOC control – even under demanding weather conditions – make them ideal for motors in the thrust range from 15 to 20 kg. Therefore, they are particularly suitable for drone applications in the fields of agricultural spraying technology, seed dispersal, small-scale logistics, and goods transport.
Original – Infineon Technologies
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Magnachip Semiconductor Corporation announced that the Board of Directors of the Company has approved an initiative intended to enhance independent Board oversight and feedback to management in conjunction with the Company’s previously announced transition to a pure-play Power business, implementation of management’s 3-3-3 strategy, and launch of new-generation Power discrete products.
The 3-3-3 strategy aims for Magnachip to achieve $300 million in annual revenue and a 30% gross margin over a three-year horizon to align Magnachip’s product roadmap, R&D investments, and operational priorities to drive structural improvements and sustainable profitability.
The Company’s Chairman, Camillo Martino, has agreed, on behalf of the Board to spend additional time on-site at the Company’s headquarters in Korea to meet with management and report back to the full Board during the implementation phase of its 3-3-3 strategy to achieve profitable growth and to maximize shareholder value. The Board expects Mr. Martino to spend several days each month in Korea for at least the remainder of 2025 in order to more closely oversee and report regularly to the Board’s other independent directors on the Company’s progress in its important strategy milestones, as well as to provide more timely feedback to management on behalf of the Board.
Camillo Martino, Chairman of Magnachip, said, “I look forward to spending more time on the ground with our management team in Korea to assist the full Board in its oversight responsibilities during the Company’s implementation of its 3-3-3 strategy as a pure-play Power business. Spending additional time on-site with the management team will allow more streamlined and timely communication with the rest of the independent Board members as Magnachip management implements its strategy to deliver new-generation Power discrete and Power IC products while also achieving its financial targets.”
YJ Kim, Magnachip’s CEO, said, “We welcome the additional support from Camillo on behalf of the Board, and look forward to continuing to provide timely feedback to the rest of the Board as we pursue these new exciting opportunities for Magnachip.”
Original – Magnachip Semiconductor
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GlobalFoundries announced plans to invest $16 billion to expand its semiconductor manufacturing and advanced packaging capabilities across its facilities in New York and Vermont. GF’s investment is a strategic response to the explosive growth in artificial intelligence, which is accelerating demand for next-generation semiconductors designed for power efficiency and high-bandwidth performance across datacenters, communications infrastructure and AI-enabled devices.
GF is collaborating with major technology companies such as Apple, SpaceX, AMD, Qualcomm Technologies, Inc., NXP and GM, that are committed to reshoring semiconductor production to the U.S. and diversifying their global supply chains. These companies partner with GF to support their production of U.S.-made chips, underscoring GF’s role as a trusted supplier of essential semiconductors and a key enabler of supply chain security.
“At GlobalFoundries, we are proud to partner with pioneering technology leaders to manufacture their chips in the United States—advancing innovation while strengthening economic and supply chain resiliency,” said Tim Breen, CEO of GlobalFoundries. “The AI revolution is driving strong, durable demand for GF’s technologies that enable tomorrow’s datacenters – including GF’s leading silicon photonics, as well as GaN for power applications. Meanwhile at the edge, GF’s proprietary FDX technology is uniquely positioned to support AI functionality with low power consumption. With all these technologies and more manufactured right here in the U.S., GF is proud to play its part in accelerating America’s semiconductor leadership.”
“GlobalFoundries investment is a great example of the return of United States manufacturing for critical semiconductors,” said U.S. Secretary of Commerce, Howard Lutnick. “President Trump has made it a fundamental objective to bring semiconductor manufacturing home to America. Our partnership with GlobalFoundries will secure U.S. semiconductor foundry capacity and technology capabilities for future generations.”
The rapid rise of AI in both the cloud and at the edge is driving the adoption of new technology platforms and 3D heterogeneous integration technologies. These advanced solutions are essential to meet the exponentially growing requirements for power efficiency, bandwidth density and performance. GF is uniquely positioned to lead in this space, with its 22FDX® and silicon photonics capabilities in production in New York and advanced development of differentiated GaN-based power solutions in Vermont.
GF’s investment builds upon the company’s existing U.S. expansion plans, including more than $13 billion to expand and modernize its New York and Vermont facilities and funding for its recently launched New York Advanced Packaging and Photonics Center—the first U.S.-based facility of its kind dedicated to silicon photonics packaging. GF is committing an additional $3 billion, which includes advanced research and development initiatives focused on packaging innovation, silicon photonics and next-generation GaN technologies. In aggregate, these investments represent a $16 billion plan to strengthen U.S. semiconductor leadership and accelerate innovation in AI, aerospace, automotive and high-performance communications.
“Today’s announcement is a direct result of President Trump’s leadership and his vision to bring back high-paying manufacturing jobs and reestablish secure, domestic supply chains for critical technologies,” said Dr. Thomas Caulfield, Executive Chairman of GlobalFoundries. “We look forward to continuing to work with the U.S. government to help create the conditions for industry and government to work together and drive meaningful, long-term impact.”
“GlobalFoundries has supplied semiconductors for Apple products since 2010 and we’re excited to see them expand right here in the United States. These chips are an essential part of Apple products like iPhone, and they’re a powerful example of American manufacturing leadership.”
Tim Cook, Apple’s CEO
“Advanced semiconductors are critical to the advanced satellite capabilities which SpaceX has been pioneering for over two decades. We are excited by the expansion of GlobalFoundries’ manufacturing base right here in the U.S., which is core to Starlink’s growth and our commitment to manufacturing in the U.S., as well as our mission to deliver high-speed internet access to millions of people around the world.”
Gwynne Shotwell, president and COO at SpaceX
“As a valued technology partner, we’re pleased to see GlobalFoundries deepen its commitment to U.S. manufacturing. These efforts are critical to building a secure and resilient semiconductor supply chain in the U.S. to support the next wave of innovation in our industry.”
Dr. Lisa Su, AMD Chair and CEO
“As a strategic supplier of Qualcomm, GlobalFoundries shares our vision for strengthening U.S. chip production capacity. This commitment from GlobalFoundries will help secure a resilient semiconductor supply chain to support the next wave of U.S. technology innovation, especially in areas vital to enabling power efficient computing, connectivity, and edge intelligence.”
Cristiano Amon, president and CEO of Qualcomm Incorporated
“Deepening our partnership with GlobalFoundries aligns with NXP’s hybrid manufacturing strategy, where we work with leading foundry partners to better serve our customers’ strategic technology, capacity and resilience needs. This collaboration allows us to scale efficiently, expand production in the U.S. and continue delivering for our customers. It’s a strong step forward in building a resilient, high-performing semiconductor supply chain in the United States.”
Kurt Sievers, chief executive officer of NXP Semiconductors
“Semiconductors are critical to the future of vehicles, and their importance will only grow. GlobalFoundries’ investment supports our work to secure a reliable, U.S.-based chip supply—essential for delivering the safety, infotainment and features our customers expect.”
Mark Reuss, president of General Motors
Original – GlobalFoundries
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Navitas Semiconductor announced its partnership with BrightLoop supporting their latest series of hydrogen fuel-cell chargers with automotive qualified Gen 3 ‘Fast’ SiC (G3F) MOSFETs for heavy-duty agricultural transportation equipment.
BrightLoop offers leading-edge, top-performance solutions with power conversion efficiencies over 98% and extreme power densities up to 35 kW/kg and 60 kW/L. Their high-voltage, high-power multiverters paired to BrightLoop’s Power Flow Processor technology are designed to deliver exceptional performance in both AC and DC applications, such as energy management scenarios for fuel cells and heavy-duty applications, as well as HV network adaptation.
Navitas’ auto-qualified G3F SiC MOSFETs are incorporated into BrightLoop’s 250 kW HV-DC/DC converter, with an output of 950VDC at 480A, and can be paralleled to achieve megawatt power capability.
Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. G3F SiC MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Trench-assisted planar technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition. All GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling.
“We are proud to partner with BrightLoop, the established leaders in leading-edge high-power density and efficiency converters,” said Gene Sheridan, CEO and co-founder of Navitas. “Both companies provide the technology and system leadership to enable the roadmap for next generation, high-power density, high-reliability converter solutions”.
“Navitas offers leading-edge SiC technology where efficiency, ruggedness, and reliability are paramount. Our high power-density, smart, efficient, and scalable multiverters lead the industry by enhancing the quantity and quality of energy delivered to our customers”, said Florent Liffran, CEO and founder of BrightLoop.
Original – Navitas Semiconductor
