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Navitas Semiconductor announced a new family of GaNSense™ Motor Drive ICs targeting home appliances and industrial drives up to 600 W.
Specifically designed for motor drive applications, this fully integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing, and autonomous protection. Compared to legacy silicon IGBT solutions, this results in a 4% higher efficiency, 40% PCB footprint reduction, and 15% lower system cost.
Key features include bidirectional lossless current sensing, which measures both positive and negative currents. This is critical in motor drives, given recirculating currents in the reverse direction between switching coil phases. The lossless sensing eliminates the need for external shunt resistors, resulting in higher efficiency, improved reliability, and a more compact design.
Turn-on and turn-off slew rates are fully adjustable, allowing designers to optimize EMI, performance, and maximize efficiency. The autonomous freewheeling function switches on the GaN IC upon detection of reverse current to reduce conduction losses, maximize efficiency, and reduce the size and cost of heatsinks.
The GaNSense Motor Drive IC family also includes several safety features such as high-and-low-side short circuit protection, over-temperature protection (OTP), and 2kV ESD on all pins.
The 650V family starts with NV6257 (2 x 170 mΩ, PQFN 6×8), NV6287 (2 x 170 mΩ, PQFN 8×10), and NV6288 (2 x 120 mΩ, PQFN 8×10), supporting drives up to 600 W.
Target applications focus on motor drives up to 600W, including air conditioners, heat pumps, washing machines, dryers, dishwashers, refrigerators, and hair dryers. For low-power industrial drives, applications range from pumps to circulators and fans.
Original – Navitas Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced its AOTL66935 utilizes AOS’ 100V AlphaSGT™ proprietary MOSFET technology which combines the advantages of trench technology for low on-resistance with high safe operating area (SOA) capability that meets 48V hot swap requirements in AI server and telecom applications.
The AOTL66935 hot swap MOSFET prevents damage to the system by limiting the high inrush current with low power losses due to the very low on-resistance (RDS(ON)). These features help deliver increased performance and reliability in harsh application conditions required in latest AI server designs. The AOTL66935 is available in TO-Leadless (TOLL) package, which is 30% smaller footprint compared to TO-263 (D2PAK). AOTL66935 is manufactured in IATF 16949-certified facilities. TOLL package technology is compatible with automated optical inspection (AOI) manufacturing requirements.
“48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional SOA robustness with high reliability. We designed the AOTL66935 to meet these demands, and the low on-resistance reduces the power losses and can enable less devices in parallel,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.
Technical Highlights
Part Number Package VDS (V) VGS (±V) TJ (°C) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66935 TOLL 100 20 175 360 258 1440 1.95 Pricing and Availability
The AOTL66935 MOSFET is immediately available in production quantities with a lead time of 14-16 weeks. The unit price in 1,000-piece quantities is $4.2.
Original – Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) introduced the company’s next generation (Gen3) 1200V αSiC MOSFETs designed to maximize efficiency in a growing market of high power applications. These Gen3 MOSFETs provide up to 30 percent improved switching figure-of-merit (FOM) compared to AOS’ previous generation while maintaining low conduction losses at high load conditions. The performance improvements do not compromise ruggedness and reliability, as the Gen3 MOSFETs have full AEC-Q101 qualification, with extended lifetime and HV-H3TRB capabilities.
As power demands surge in electric vehicles (EVs), AI data centers, and renewable energy systems, inefficiencies in power conversion stages can significantly strain electrical supply and cooling systems. For EV designs, AOS’ Gen3 αSiC MOSFETs enable engineers to create higher power density systems with greater efficiency, reducing battery consumption and extending vehicle range. Future AI data centers adopting high-voltage DC (HVDC) architectures, such as 800V or ±400V, will benefit from reduced losses and increased power density to meet growing power requirements. To support these higher system voltages, AOS’ Gen3 1200V devices will be critical for enabling new topologies with the necessary efficiency.
The new AOS Gen3 1200V MOSFETs are available with an on-resistance (Rds(on)) range from 15mOhm (AOM015V120X3Q) to 40mOhm (AOM040V120X3Q) in a TO27-4L package. AOS plans to roll out its Gen3 MOSFETs in additional surface mount and topside cooled packages as well as in case modules. AOS has also qualified a larger Gen3 1200V/11mOhm MOSFET die designed for high-power EV traction inverter modules and is available for wafer sales.
“Electric vehicles and AI are transforming industries, but they require advanced power systems that can maintain efficiency even as energy demands increase,” said David Sheridan, Vice President of Wide Bandgap products at AOS. “We’re excited that this next generation of AOS αSiC MOSFETs can deliver the performance our customers require while making a positive environmental impact.”
Technical Highlights
- Automotive AEC-Q101 Qualified
- Wide compatibility of gate drive voltages (+15V to +18V)
- Up to 30% improved switching FOM
- Extended HV-H3TRB compliant
- Improved UIS and Short Circuit Capability
Original – Alpha and Omega Semiconductor
