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Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan™ technology. Designed to operate in harsh space environments, the company’s new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The new radiation hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. Combining the robust performance of GaN HEMTs with Infineon 50+ years of experience in high reliability applications, the new power transistors deliver best-in-class efficiency, thermal management and power density for smaller, lighter, and more reliable space designs. The devices complement Infineon’s proven legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalog of power solutions for space applications.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” said Chris Opoczynski, Senior Vice President and General Manager HiRel, at Infineon. “This milestone brings the next-generation of high reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new radiation hardened GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications – making Infineon a leader in GaN for high reliability applications. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
Engineering samples and evaluation boards are available immediately with the final JANS device being released in the summer of 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable customers greater flexibility in creating efficient and reliable designs. For more information, visit www.infineon.com/radhardgan
Original – Infineon Technologies
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Ather Energy, a leading electric two-wheeler manufacturer in India and Infineon Technologies Asia Pacific Pte Ltd, a global leader in semiconductor solutions, signed a Memorandum of Understanding (MoU) in Seoul, South Korea, to jointly drive innovation in the electric vehicle (EV) industry in India. The collaboration focuses on advancing semiconductor technologies to support light electric vehicles (LEVs), charging infrastructure, and safety, with a shared vision to contribute to India’s growing EV ecosystem.
The partnership aims to leverage cutting-edge semiconductor solutions from Infineon based on various technologies, microcontrollers and automotive related sensors, alongside Ather’s expertise in designing state-of-the-art LEVs (Light Electric Vehicles). Together, the companies will work towards enabling more efficient, reliable, and cost-effective EV solutions, driving the adoption of electric two-wheelers in India.
Speaking on the occasion, Swapnil Jain, Executive Director and CTO, Ather Energy, said: “At Ather, we’ve always believed that building great EVs starts with getting the fundamentals right – performance, efficiency, reliability. Our approach has always been grounded in first-principles thinking and deep engineering, questioning how every system can be made better, faster, and more efficient. That’s where semiconductor innovation becomes critical. Infineon’s leadership in semiconductors and system solutions brings deep expertise that aligns with our engineering-first approach. Our partnership with Infineon gives us access to advanced technologies that can help us improve key systems, from charging to safety and explore ways to reduce system complexity and cost. We’re looking forward to seeing how this collaboration can help us push the boundaries, not just for our products, but for the larger EV ecosystem in India.”
Highlighting the importance of this partnership, Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon, said: “India is one of the fastest-growing EV markets globally, and electric two-wheelers are at the heart of this transformation. We are thrilled to partner with Ather Energy to enable the next generation of sustainable mobility solutions. Our advanced SiC and GaN technologies will help drive energy-efficient and high-performance electric vehicles. This partnership will foster innovation that contributes meaningfully to India’s ambitious objective to reach a 30 percent sales share for EVs by 2030.”
This collaboration will explore sensing and safety innovations to elevate vehicle safety and user experience. These solutions deliver significant advantages in terms of energy efficiency, charging speed, and overall system reliability, making EVs more accessible, sustainable, convenient and appealing to consumers.
Original – Infineon Technologies
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MCC introduced the 100V P-channel MOSFET that optimizes space without sacrificing performance. Housed in a compact DFN3333 package, MCG085P10 utilizes innovative trench power LV MOSFET technology to maximize reliability and efficiency.
From its exceptionally low 85mΩ on-resistance that reduces voltage drops and heat generation to low conduction losses, this component is well-suited for diverse applications. Requiring lower gate drive voltages, our MOSFET ensures stable operation under harsh working conditions.
MCG085P10 also solves common challenges, including efficiency, heat management, and space constraints, offering engineers an edge in modern electronic design.
Features & Benefits:
- Trench Power LV MOSFET Technology: Enhances performance with reduced gate drive requirements and improved efficiency.
- Low On-Resistance: Boosts overall efficiency thanks to minimal voltage drop and heat generation during operation.
- Low Conduction Losses: Increases energy savings and improves thermal performance in power applications.
- Compact DFN3333 Package: Enables smaller, more innovative electronic designs.
Original – Micro Commercial Components
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On May 15, GlobalWafers Co., Ltd. hosted U.S. Investment Accelerator Executive Director Michael Grimes, Taiwan Minister of Economic Affairs Kuo Jyh-huei, AIT Director Raymond Greene, ROC Taiwan’s Representative to the United States Alexander Yui, Sherman Mayor Shawn Teamann, and hundreds of customers, suppliers, and partners in Sherman, Texas to celebrate the Grand Opening of GlobalWafers America (GWA), the company’s newest and most advanced 300mm silicon wafer manufacturing facility.
GlobalWafers made the decision to build its flagship facility in the United States in May 2022 and held the groundbreaking ceremony in Sherman on December 2, 2022. To date, the US$3.5 billion project has created 1200 construction and 180 permanent jobs in North Texas and will employ up to 650 engineering, technical and operational professionals by the end of 2028.
During the celebration Chairperson Doris Hsu unexpectedly announced the company’s plan to further grow its U.S. manufacturing base, stating: “On the three-year anniversary of our decision to build GWA, I am pleased to announce GlobalWafers’ intention to expand our current U.S. investment by another $4 billion to reach $7.5 billion!” In alignment with growth in market demand- combined with an advantageous tariff structure favoring cost effective U.S. expansion- GlobalWafers expects to add phases 3 and 4 to its existing commitment in Sherman. As the only advanced wafer supplier manufacturing in the United States, this additional investment, bolstered by ongoing support from the U.S. Government and the Trump Administration, is expected to fully secure the advanced wafer supply needed to power a broad range of next-generation technologies and innovation.
On this point, GWC President Mark England noted: “GWA will fill a key vulnerability in the U.S. supply chain and help build a more complete and self-sufficient local semiconductor ecosystem — one that is more resilient and future-ready.” In fact, GWA is the only fully integrated advanced silicon wafer manufacturing facility participating in the U.S. Government’s CHIPS for America Program and is the first production line of its kind built in the United States in over 20 years.
Under the CHIPS Program- now part of President Trump’s new U.S. Investment Accelerator- the U.S. Department of Commerce is investing US$406 million in GlobalWafers’ new U.S. operations in a strategy to rebuild a key node of the U.S. semiconductor supply chain. At the event, U.S. Investment Accelerator Executive Director Michael Grimes observed: “GlobalWafers investment is a great example of the return of United States manufacturing in a critical industry. President Trump and Secretary Lutnick have made it a fundamental objective to bring semiconductor manufacturing home to America. Through our work with GWA, we are ensuring that the essential starting material for advanced chips is manufactured right here in United States. GlobalWafers current investment, together with its new commitment announced today, will secure U.S. wafer supply for generations to come.”
The City of Sherman, Grayson County, and the State of Texas have also provided important incentives in the form of land, direct grants, tax incentives and excellent manufacturing infrastructure. Chairperson Doris Hsu noted, “There is simply not a more welcoming location in all the United States for doing business than Texas, Grayson County and Sherman. They have worked strategically to build the Silicon Prairie and GWA is thrilled to be part of it.” Governor Greg Abbott remarked, “We are proud that GlobalWafers America is now calling Texas home. GWA is rounding out the already well-established Texas semiconductor ecosystem, setting Texas apart as the only state in the country with advanced silicon wafers.”
From construction to production, GlobalWafers has partnered with hundreds of best-in-class suppliers who have also brought advanced engineering systems, technology and business processes to the project. “Without construction partners, toolmakers and materials suppliers also pushing the edge of their capabilities, GWA would not be able to deliver the quality wafers our customers have come to expect from GlobalWafers,” said GWA VP of Operations Wyatt Watson. “The GWA project has brought out the best of our entire supply chain.”
GlobalWafers is one of five global suppliers of advanced semiconductor wafers and the only one expanding in the United States during this new era of supply chain regionalization. Along these lines, Ashlie Wallace, GlobalFoundries’ SVP of Global Supply Chain, echoed the sentiment of many customers noting, “As a longstanding strategic partner, we are pleased to see GlobalWafers increasing domestic supply of silicon wafers critical to the essential semiconductors we manufacture.”
300mm silicon wafers are the essential input used by foundries and integrated device manufacturers to produce leading-edge, mature-node, and memory chips. Silicon from GWC’s semiconductor wafers is found in essentially every device that powers modern life– from home appliances, automobiles and physical infrastructure to cell phones, computers, and AI applications.
Further to the strategic phase 3 & 4 expansion announced today, GWA’s new 142-acre campus in Sherman— designed to accommodate up to six phases — has space to add two additional phases and significantly grow capacity in lockstep with chip producers who have collectively announced over US$500 billion in new U.S. investments over the next decade.
As part of our core ESG commitment, GlobalWafers companies worldwide practice green manufacturing. Once fully ramped, GWA will run on 100% renewable energy to produce the world’s most advanced silicon wafers. Across the GlobalWafers family, we remain deeply committed to minimizing our environmental impact while enabling the next generation of semiconductor innovation.
GlobalWafers Co., Ltd., the world’s third largest supplier of semiconductor wafers, maintains 18 manufacturing and operational sites spanning three continents and nine countries. The company is one of the global leaders in semiconductor technology, providing innovative and advanced technology solutions to leading chip manufacturers to transform lives around the world.
Original – GlobalWafers
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Soitec announced the appointment of Albin Jacquemont as its new Chief Financial Officer (CFO).
Albin Jacquemont brings over 30 years of international experience in financial leadership, strategic planning, and corporate governance. His career spans listed and private equity-backed industrial and technology companies, including Inetum, Saur, Altran Technologies, Darty, and Carrefour. Throughout his tenure in these organizations, he has led major financial transformations and delivered significant value through operational performance improvement, cash-flow optimization and M&A execution.
In his new role, Albin Jacquemont will be responsible for all finance-related matters at Group level. He will play a pivotal role in reinforcing Soitec’s financial and operational foundations and supporting the company’s next phase of sustainable growth and value creation.
He succeeds Léa Alzingre, who will be stepping down to pursue new professional opportunities, having supported Soitec’s growth over the past six years.
“We are delighted to welcome Albin Jacquemont to Soitec’s Executive Committee. His extensive experience across complex industrial and technology environments, combined with his proven track record in financial transformation and value creation, will be instrumental as we continue to scale globally. I am confident that his leadership will strengthen our financial strategy and support the acceleration of our sustainable growth ambitions. I would also like to warmly thank Léa Alzingre for her strong commitment and valuable contributions to Soitec’s development during her tenure”, commented Pierre Barnabé, Soitec’s CEO.
“I am honored and excited to join Soitec’s Executive Committee, a global leader in innovative semiconductor materials. After a career spanning over three decades in senior financial leadership roles across Europe, the U.S., and emerging markets — including listed groups and private equity-owned companies — I look forward to bringing my experience to support Soitec’s global ambitions and pioneering technologies”, Albin Jacquemont stated.
Original – Soitec
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Soitec announced its revenue for the fourth quarter of fiscal year 2025 and its full-year results of fiscal year 2025 (ended on March 31st, 2025). The financial statements were approved by the Board of Directors during its meeting.
Pierre Barnabé, Soitec’s CEO, commented: “On the back of strong sales in the fourth quarter, we closed fiscal year 2025 in line with our revised guidance, with a high-single digit decline in full-year revenue. In this context, strict cost management enabled us to deliver a robust EBITDA margin, generate positive free cash flow, and continue investing both in innovation and in our industrial capacity – all while maintaining a very healthy balance sheet.
In a volatile and uncertain economic environment, we are focusing on parameters within our control to strengthen our fundamentals and accelerate our diversification beyond RF-SOI and beyond Mobile Communications. With the growing adoption of our new products by industry leaders – POI becoming an industry standard for innovative smartphones and Photonics-SOI gaining traction among industry leaders to equip the next generation of AI Datacenters – we have been able to partially offset the ongoing RF-SOI inventory correction and mitigate the impact of the weakness in the automotive industry. While RF-SOI remains by far the first contributor to our revenue, three other products – FD-SOI, Power-SOI and POI – are now each generating around or above 100 million US dollars in revenue.
This environment however provides limited visibility. We have therefore decided to suspend all previously issued guidance and to only provide revenue guidance on a quarterly basis. We expect Q1’26 to reflect the impact of the Imager-SOI phase out, which we had already anticipated and prepared for. Q1’26 revenue is hence expected to be down around 20% year on year, Imager-SOI contributing 25 million dollars in Q1’25.
We remain confident in our solid fundamentals and in our ability to accelerate growth as soon as our end markets begin to recover. Our strong technology megatrends – 5G, Energy Efficiency and Artificial Intelligence – and our unique expertise in engineered substrates continue to support the expansion of our Addressable Market from around 5 million wafers (200-mm equivalent) in 2024 to around 12 million in 2030”, added Pierre Barnabé.
Original – Soitec
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Texas Instruments (TI) announced it is working with NVIDIA in the development of power management and sensing technologies for 800V high-voltage direct current (HVDC) power distribution systems for data center servers. The new power architecture paves the way for more scalable and reliable next-generation AI data centers.
With the growth of AI, the power required per data center rack is predicted to increase from 100kW today to more than 1MW in the near future. To power a 1MW rack, today’s 48V distribution system would require almost 450lbs of copper, making it physically impossible for a 48V system to scale power delivery to support computing needs in the long term.
The new 800V high-voltage DC power-distribution architecture will provide the power density and conversion efficiency that future AI processors require, while minimizing the growth of the power supply’s size, weight and complexity. This 800V architecture will enable engineers to scale power-efficient racks as data-center demand evolves.
“A paradigm shift is happening right in front of our eyes,” said Jeffrey Morroni, director of power management research and development at Kilby Labs and a TI Fellow. “AI data centers are pushing the limits of power to previously unimaginable levels. A few years ago, we faced 48V infrastructures as the next big challenge. Today, TI’s expertise in power conversion combined with NVIDIA’s AI expertise is enabling 800V high-voltage DC architectures to support the unprecedented demand for AI computing.”
“Semiconductor power systems are an important factor in enabling high-performance AI infrastructure,” said Gabriele Gorla, VP of System Engineering of NVIDIA. “NVIDIA is teaming with suppliers to develop an 800V high-voltage DC architecture that will efficiently support the next generation of powerful, large-scale AI data centers.”
Original – Texas Instruments
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Wolfspeed, Inc. announced that David Emerson, Ph.D. has been appointed Executive Vice President and Chief Operating Officer, a newly created role responsible for overseeing operational excellence across the Company’s 200-millimeter facility footprint, reducing customer lead times, and manufacturing leading silicon carbide solutions for Wolfspeed’s customers. Dr. Emerson will be responsible for Wolfspeed’s Operations, Supply Chain, and Quality divisions.
As the former Executive Vice President of our LED Products division, Dr. Emerson brings a proven track record of transforming complex, global operations into scaled and high-performing businesses that are positioned to win in emerging technologies. Notably, during his time at Wolfspeed (then operating as Cree, Inc.), Dr. Emerson gained an in-depth understanding of both the devices and materials businesses and helped guide the company through a period of heightened U.S. government scrutiny on global trade practices and fair competition.
Wolfspeed Chief Executive Officer, Robert Feurle, commented, “We are excited to welcome Dave back to Wolfspeed as our new Chief Operating Officer. Having previously led our LED business through market disruption and global expansion, Dave brings a wealth of industry expertise and strategic insight which positions him well to drive operational excellence at Wolfspeed. His ability to directly confront complex challenges aligns with our ambitions at this critical stage in Wolfspeed’s lifecycle. I look forward to collaborating with him as we work to reaccelerate revenue growth, work to achieve profitability, complete our 200-millimeter transition, and ultimately advance Wolfspeed’s global leadership in silicon carbide technology.”
“After spending a sizable portion of my career at Cree overseeing the development of silicon carbide-powered LED solutions, I am eager to contribute to Wolfspeed’s forward momentum as its new Chief Operating Officer. I am impressed by the Company’s sustained leadership in silicon carbide and its vertically integrated, greenfield 200-millimeter facility footprint,” said Dr. Emerson. “Under Robert’s leadership, Wolfspeed is increasingly focused on serving the fastest-growing areas of the silicon carbide market, and these strategic verticals necessitate high-performance, high-quality solutions. My experience driving operational excellence has equipped me with the skills to help develop best-in-class solutions for our blue-chip customers, all while working to accelerate the Company’s path to profitability. I’m excited for the opportunity to help shape the Company’s continued growth and success.”
The addition of the Chief Operating Officer role to the executive leadership team underscores Wolfspeed’s unwavering commitment to operational excellence as it scales its industry-leading 200 mm silicon carbide manufacturing platform. The Chief Operating Officer will play a critical role in driving manufacturing quality and efficiency. In this role, Dr. Emerson will also be responsible for accelerating time-to-market and ensuring consistent delivery of innovative, high-performance silicon carbide solutions to customers worldwide. As Wolfspeed continues to expand capacity to serve the expected growth in demand across automotive, industrial, and energy markets, this role is central to enhancing operational agility and achieving growth.
Original – Wolfspeed
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Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support ‘Kyber’ rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies.
NVIDIA’s next generation of 800V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity.
Today’s existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kilowatts (kW). Bulky copper busbars are required to transfer this low-voltage electricity from the rack-mounted power shelves to the compute trays. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency.
Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia’s approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability.
Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%, due to I2R losses, where the same amount of power can be delivered with increased voltage and lower current. Using a traditional 54V DC system, over 200 kg of copper would be needed to power a 1MW rack, which is not sustainable for next-generation AI data centers with GW power demand.
The 800V HVDC directly powers the IT racks (eliminating the need for additional AC-DC converters) and is converted by DC-DC converters to lower voltages, which will drive GPUs, such as the Rubin Ultra.
Navitas is an established leader in AI data center solutions enabled by GaN and SiC technology. The high-power GaNSafe™ power ICs integrate control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
Additionally, Navitas offers a family of medium voltage (80-120V) GaN devices, which have been optimized for secondary side DC-DC conversion, delivering high-speed, high efficiency, and small footprint, for AI data centers PSUs with outputs of 48V-54V.
Enabled by 20 years of SiC innovation leadership, GeneSiC proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature, delivering high-speed, cool-running operation for high-power, high-reliability applications. G3F SiC MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Offering the industry’s broadest voltage range – stretching from 650 V to ultra-high voltages of 2.3 kV to 6.5 kV, the SiC technology has been implemented in multiple projects for MW energy storage and grid-tied inverters with the Department of Energy (DoE).
Fig. 1. Navitas GaN and SiC technologies cover the complete power delivery from grid to the GPU.
In August 2023, Navitas introduced a high-speed, high-efficiency 3.2 kW CRPS, achieving a 40% smaller size than best-in-class, legacy silicon solutions for power-hungry AI and Edge computing. This was followed by the world’s highest power density 4.5 kW CRPS, achieving a ground-breaking 137 W/in3, and an efficiency of over 97%. In November 2024, Navitas released the world’s first 8.5 kW AI data center power supply, powered by GaN and SiC that could meet 98% efficiency, complying with the Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. Additionally, Navitas created IntelliWeave, an innovative patented new digital control technique, that when combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs, enables PFC peak efficiencies to 99.3% and reduces power losses by 30% compared to existing solutions. Alongside the Computex exhibition in Taiwan, the latest release of their 12 kW PSU was presented at the Navitas ‘AI Tech Night’ on 21st May.
“We are proud to be selected by NVIDIA to collaborate on their 800 HVDC architecture initiative. Our latest innovations in high-power GaN and SiC technologies have seen world firsts and have created new inflections into markets such as AI datacenters and electric vehicles”, said Gene Sheridan, CEO and co-founder of Navitas. “With our wide portfolio range, we can support NVIDIA’s 800V HVDC infrastructure, from grid to the GPU. We appreciate that NVIDIA recognizes our technology and commitment to driving the next generation of data center power delivery.”
NVIDIA’s 800V HVDC architecture will improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.
Original – Navitas Semiconductor
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Analog Devices, Inc. announced financial results for its fiscal second quarter 2025, which ended May 3, 2025.
- Revenue of $2.64 billion, with double-digit year-over-year growth across all end markets
- Operating cash flow of $3.9 billion and free cash flow of $3.3 billion on a trailing twelve-month basis or 39% and 34% of revenue, respectively
- Returned $0.7 billion to shareholders via dividends and repurchases during the second quarter
“ADI delivered second quarter revenue and earnings per share above the high end of guidance,” said Vincent Roche, CEO and Chair. “Against a backdrop of global trade volatility, our performance reflects the ongoing cyclical recovery, and the strength and resiliency of our business model. Our unwavering commitment to innovation and customer success, enables ADI to continue extending our leadership at the increasingly AI-driven Intelligent Edge, delivering exceptional value for shareholders over both the near- and long-terms.”
CFO Richard Puccio added, “Second quarter bookings accelerated across all end markets and all regions, resulting in continued sequential backlog growth. The improving demand signals we saw throughout our fiscal Q2, support our outlook for continued growth in Q3, and reinforce our view that we are in a cyclical upturn.”
Performance for the Second Quarter of Fiscal 2025 (PDF)
Outlook for the Third Quarter of Fiscal Year 2025
For the third quarter of fiscal 2025, we are forecasting revenue of $2.75 billion, +/- $100 million. At the midpoint of this revenue outlook, we expect reported operating margin of approximately 27.2%, +/-150 bps, and adjusted operating margin of approximately 41.5%, +/-100 bps. We are planning for reported EPS to be $1.23, +/-$0.10, and adjusted EPS to be $1.92, +/-$0.10.
Our third quarter fiscal 2025 outlook is based on current expectations and actual results may differ materially as a result of, among other things, the important factors discussed at the end of this release. The statements about our third quarter fiscal 2025 outlook supersede all prior statements regarding our business outlook set forth in prior ADI news releases, and ADI disclaims any obligation to update these forward-looking statements.
The adjusted results and adjusted anticipated results above are financial measures presented on a non-GAAP basis. Reconciliations of these non-GAAP financial measures to their most directly comparable GAAP financial measures are provided in the financial tables included in this release. See also the “Non-GAAP Financial Information” section for additional information.
Original – Analog Devices
