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Leapers Semiconductor has officially commenced construction of its automotive-grade third-generation power semiconductor module project in Jiangdu District’s development zone. The launch event was part of Jiangdu District’s Major Project Construction Mobilization Conference, where local officials outlined key economic initiatives for the region. District Party Secretary Zhu Lili delivered a speech at the ceremony, emphasizing the urgency of driving economic growth from the start of the year. District Mayor Shen Bohong presided over the event, with key government representatives also in attendance.
During the event, township leaders provided updates on the district’s 2025 major construction projects, reaffirming their commitment to economic development. The first quarter alone saw the initiation of 29 major projects, with a total investment of 8.72 billion yuan ($1.2 billion), spanning sectors such as new materials, renewable energy, high-end equipment, and environmental protection.
Leapers Semiconductor SiC module project, which began construction on March 1, represents a 10 billion yuan ($1.4 billion) investment, covering an area of 32 acres. Once completed, the facility is expected to achieve an annual production capacity of 3 million automotive-grade SiC modules, generate 10 billion yuan ($1.4 billion) in annual revenue, and contribute 500 million yuan ($70 million) in annual tax revenue.
With this new SiC module packaging and testing facility, Leapers Semiconductor is set to enhance production capabilities, accelerate innovation, and drive the adoption of SiC power solutions worldwide.
Original – Leapers Semiconductor
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MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.
Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.
Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.
Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.
Features & Benefits:
- SGT Technology: Ensures outstanding electrical performance and efficiency.
- Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
- Low Conduction Losses: Reduce energy waste, optimizing energy usage.
- Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
- High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.
Original – Micro Commercial Components
