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MCC Semi unveiled the latest selection of 5000W TVS diodes designed to provide superior protection against transient voltage spikes. Whether caused by lightning or other electrical disturbances, voltage surges can add up to costly damage and system failures without proper safeguards in place. That’s where our 5000W TVS solutions come in.
With a broad range of voltages — from 11V to 400V — and a compact yet powerful SMC package, these transient voltage suppressors (TVS) optimize space on the board without sacrificing performance.
Leveraging glass-passivated junction technology, these TVS diodes ensure the highest durability and reliability in demanding environments at operating junction temperatures of up to 175°C. They also boast IEC 61000-4-2 ESD ratings of 30kV for air and contact discharge for enhanced protection during electrostatic discharge events.
Rapid response times with capacitance typically less than 3,000 pF and impressive clamping capabilities assure sensitive electronic components are adequately protected, and a leakage current less than 2µA above 11V reduces power losses.
Available in unidirectional and bidirectional configurations, MCC’s 5000W TVS diodes meet diverse application needs while reducing maintenance costs and boosting overall reliability.
Features & Benefits:
- IEC 61000-4-2 ESD Protection: 30kV (Air) and 30kV (Contact) for solid electrostatic discharge protection.
- Maximum Operating Junction Temperature: Rated up to 175°C for reliable operation in high-temperature environments.
- Ultra-Fast Response Time: Capacitance typically less than 3000 pF from 0V to breakdown voltage minimum, ensuring immediate protection.
- Low Leakage Current: Typical ID less than 2µA from 11V to minimize power loss.
Original – Micro Commercial Components
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In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery.
Infineon Technologies AG introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.
The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.
The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a V DS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon will be showcasing a demo featuring the 1EDL8011 at its global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October. The 1EDL8011 is available now. Further information can be found at www.infineon.com/1edl8011.
Original – Infineon Technologies
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Aehr Test Systems announced financial results for its first quarter of fiscal 2025 ended August 30, 2024.
Fiscal First Quarter Financial Results:
- Net revenue was $13.1 million, compared to $20.6 million in the first quarter of fiscal 2024.
- GAAP net income was $0.7 million, or $0.02 per diluted share, compared to GAAP net income of $4.7 million, or $0.16 per diluted share, in the first quarter of fiscal 2024.
- Non-GAAP net income, which excludes the impact of stock-based compensation, acquisition-related costs, and amortization of intangible assets, was $2.2 million, or $0.07 per diluted share, compared to non-GAAP net income of $5.2 million, or $0.18 per diluted share, in the first quarter of fiscal 2024.
- Bookings were $16.8 million for the quarter.
- Backlog as of August 30, 2024 was $16.6 million.
- Total cash, cash equivalents and restricted cash as of August 30, 2024 were $40.8 million, compared to $49.3 million at May 31, 2024, reflecting $10.6 million in net cash paid during the quarter for the acquisition of Incal Technology, Inc.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“We finished the first quarter with revenue and non-GAAP net income ahead of consensus estimates and are off to a good start to our fiscal year. Silicon carbide wafer level burn-in test systems and full wafer contactors are poised to be key contributors to revenue again this year. We are also forecasting material bookings and revenue contributions from several other markets this fiscal year, as we are successfully executing on our strategy to expand our test and burn-in products into other large and fast-growing markets such as artificial intelligence processors, gallium nitride power semiconductors, hard disk drive components and flash memory devices.
“We have been seeing a stabilization and increasingly positive discussions within the silicon carbide power semiconductor market over the past quarter. Electric vehicle (EV) suppliers are clearly moving towards silicon carbide in integrated modules, combining silicon carbide MOSFETs into single packages to meet the industry’s power, efficiency, and cost-effectiveness demands. Due to the need for extensive test and burn-in of these devices to ensure reliability for mission-critical applications like EVs, the benefits of conducting this screening at the wafer level before integrating them into modules, which may sometimes contain 32 or more other devices, are becoming clear. The process improves yields and reduces costs, driving demand for wafer level burn-in, an area where Aehr Test stands as the low-cost leader and proven solution for this critical testing. We are highly optimistic about our silicon carbide business and expect it to gain momentum over the next few quarters. Our silicon carbide customers are forecasting capacity expansion needs in calendar 2025, with several anticipating purchases of one or two systems in early 2025, followed by production volumes in the second half of the year, and ramping further into 2026.
“Meanwhile, we continue to see strong demand for our FOX WaferPakTM full wafer Contactors for silicon carbide, driven by a record number of new device designs started this past quarter. These designs are expected to lead to additional WaferPak purchases for engineering qualification as well to volume production orders as they advance to production. We had another solid quarter for WaferPak sales, generating over $12 million in revenue from WaferPaks in the first quarter.
“We are also making steady progress on our previously announced benchmarks and engagements with new silicon carbide device and module suppliers. We are confident that we will add several new silicon carbide customers this year, establishing our solution as their tool of record for volume production. Additionally, silicon carbide is gaining traction in applications beyond electric vehicles, such as solar, industrial, and data centers, which will expand our addressable markets.
“We are now in negotiations with our first gallium nitride (GaN) semiconductor customer for volume production wafer level test and burn-in of their devices. This past year, this customer purchased a significant number of WaferPaks to successfully qualify a wide range of GaN device types aimed at multiple markets, including consumer, industrial, and automotive. In addition, we have had increased discussions and engagements with multiple potential new GaN suppliers. We believe GaN is a significant up and coming technology for power semiconductors. With a forecasted CAGR of more than 40% to over $2 billion in GaN devices sold annually by 2029, it has the potential to be a significant market opportunity for Aehr’s wafer level solutions.
“Last quarter, we announced that an Artificial Intelligence (AI) accelerator company committed to evaluating our FOXTM solution for wafer level burn-in of their high-power processors. This evaluation is underway at our Fremont facility, where multiple wafers are being tested using our proprietary WaferPaks and new high-power FOX-XP and NP systems, which provide up to 3500 watts of power delivery and thermal control per wafer. We are delivering over 2000 amperes of current to a single 300 mm wafer, allowing us to burn-in numerous processors with our proprietary test modes. The evaluation is progressing very well, and once we demonstrate successful wafer level test results and throughput, we anticipate they will adopt our high-power FOX-XP systems for production of their next-generation AI processors, beginning this fiscal year.
“During the quarter we announced and completed our acquisition of Incal Technology, Inc. We are excited to bring the combined strengths of both companies to market as we begin engaging with Incal’s customers, including many AI industry leaders. Customer feedback to this acquisition has been overwhelmingly positive, with several meetings held over the past few weeks where some customers indicated increased forecasts for engineering qualification as well as for volume production.
“Last month, we were pleased to announce the first volume production orders for Incal’s new Sonoma ultra-high-power semiconductor packaged part test and burn-in solution designed for AI accelerators, graphics processors, network processors, and high-performance computing processors. These orders were placed by a large-scale data center hyperscaler that provides computing power and storage capacity to millions of users worldwide. The integration with Incal is progressing well. We have already shipped several systems since the acquisition, and we plan to consolidate personnel and manufacturing into Aehr’s Fremont facility by the end of the fiscal year.
“Last quarter, we announced a key customer in the hard disk drive space that is now forecasting a production ramp-up starting this fiscal year for a new high-volume data storage device application. This customer is finalizing their capacity requirements, and we expect this ramp-up to drive orders for multiple FOX-CP production systems and WaferPak Contactors, with shipments likely occurring in the second half of this fiscal year. We see the data storage market, along with various devices supporting the global 5G expansion, as new growth opportunities for our systems, as these markets require devices with exceptionally high levels of quality and long-term reliability.
“With all of these customer engagements, market opportunities, and the products to address them, we are very optimistic about the year ahead, and we are reaffirming our financial guidance for revenue growth and profitability for the year.”
For the fiscal year ending May 30, 2025, Aehr is reiterating its previously provided guidance for total revenue of at least $70 million and net profit before taxes of at least 10% of revenue.
Original – Aehr Test Systems
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Infineon Technologies AG announced a partnership with Canada-based AWL-Electricity Inc., a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN™ GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries.
The partnership combines Infineon’s cutting-edge gallium nitride (GaN) technology with AWL-E’s innovative MHz resonant capacitive coupling power transfer system, achieving industry-benchmark wireless power efficiencies. Infineon’s GaN transistor technology offers highest efficiency and highest power density while operating at highest switching frequencies.
This enables AWL-E to increase its system lifetime, reduces downtime and operating costs, and improves ease-of-use for consumers. In the automotive sector, the technology enables a new level of interior experiences and seat dynamics. In industrial systems, it provides near-unconstrained levels of design freedom, such as for automated guided vehicles or robotic applications. Additionally, the technology allows for a fully sealed system design, eliminating the need for charging ports which contributes to reducing global consumption of batteries.
“With our partner approach we prove once more the ability to unlocking the full system-level benefits of Infineon’s CoolGaN technology, enabling compactness and efficiency,” said Falk Herm, Global Partnership & Ecosystem Management at Infineon’s Power & Sensor Systems (PSS) Division at Infineon. “The combination of AWL-E and Infineon’s complementary capabilities demonstrates how the features of GaN, namely operating at MHz frequencies, change the paradigm of what can be done with power transistors, driving greener and better performing products.”
“Infineon uniquely brings you into their family with a recognition that a strong ecosystem ultimately solves today’s power needs,” said Francis Beauchamp-Verdon, Co-founder, VP and Business Development Director at AWL-E. “Infineon’s GaN transistors, eval boards, and partner opportunities have boosted acceptance of our GaN-based MHz power coupling systems.”
Infineon is a leader in the power semiconductor market and currently the only manufacturer mastering all power technologies while offering the broadest product and technology portfolio of silicon (such as SJ MOSFETs, IGBTs), silicon carbide (such as Schottky diodes and MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare die, discretes, and modules.
Original – Infineon Technologies
